h11dx
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11DX
H11D1
H11D2
H11D3
H11D4
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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H11DX
Abstract: H11D1 H11D2
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D1
H11D2
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H11DX
Abstract: H11D4.300 H11D12 4N38
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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H11DX
H11D1
H11D2
H11D3
H11D4
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D4.300
H11D12
4N38
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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PDF
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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Original
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PDF
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
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Untitled
Abstract: No abstract text available
Text: H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B C
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H11D1/H11D2/H11D3/H11D4
i179004
H11D1/H11D2,
H11D3/H11D4,
2002/95/EC
2002/96/EC
H11D1/H11D2/H11D3/H11D4
18-Jul-08
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H11DX
Abstract: H11D1 4N38 H11D2 H11D3 H11D4
Text: HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS H11D1 H11D2 H11D3 H11D4 4N38 DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
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Original
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PDF
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H11D1
H11D2
H11D3
H11D4
H11DX
H11D1,
H11D2,
H11D3,
H11D4,
E90700
H11D1
4N38
H11D2
H11D3
H11D4
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Untitled
Abstract: No abstract text available
Text: H11D1/ H11D2/ H11D3/ H11D4 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current
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H11D1/
H11D2/
H11D3/
H11D4
H11D1/H11D2,
H11D3/H11D4,
i179004
E52744
VDE0884)
IEC60950
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H11D2
Abstract: H11D1-X007
Text: H11D1/ H11D2/ H11D3/ H11D4 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current
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H11D1/
H11D2/
H11D3/
H11D4
H11D1/H11D2,
H11D3/H11D4,
i179004
E52744
VDE0884)
IEC60950
H11D2
H11D1-X007
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H11D3
Abstract: OPTO H11D1
Text: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage
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H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
E52744
H11D1/2/3/4
1-888-Infineon
H11D1/2/3/4
H11D3
OPTO H11D1
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H11D1
Abstract: H11D1-X007 H11D2 H11D3 H11D4
Text: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation
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H11D1/
H11D2/
H11D3/
H11D4
H11D1/H11D2,
H11D3/H11D4,
2002/95/EC
2002/96/EC
UL1577,
E52744
H11D1
H11D1-X007
H11D2
H11D3
H11D4
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H11D2
Abstract: H11D1 vishay 3020 8 pin optocoupler H11D1 H11D3 H11D4
Text: H11D1, H11D2, H11D3, H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B
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H11D1,
H11D2,
H11D3,
H11D4
H11D1/H11D2,
H11D3/H11D4,
i179004
2002/95/EC
2002/96/EC
H11D2
H11D1 vishay
3020 8 pin optocoupler
H11D1
H11D3
H11D4
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83611
Abstract: NTCR 2.5 IEC60065 VDE0884
Text: H11D1/H11D2/H11D3/H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage FEATURES • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % • Good CTR linearly with forward current • Low CTR degradation A 1 6 B C
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H11D1/H11D2/H11D3/H11D4
H11D1/H11D2,
H11D3/H11D4,
i179004
2002/95/EC
2002/96/EC
H11D1/H11D2/H11D3/H11D4
08-Apr-05
83611
NTCR 2.5
IEC60065
VDE0884
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H11D1-X007
Abstract: H11D1 H11D2 H11D3 H11D4
Text: H11D1/ H11D2/ H11D3/ H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage Features • • • • • • • • CTR at IF = 10 mA, BVCER = 10 V: ≥ 20 % Good CTR Linearly with Forward Current Low CTR Degradation
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H11D1/
H11D2/
H11D3/
H11D4
H11D1/H11D2,
H11D3/H11D4,
2002/95/EC
2002/96/EC
UL1577,
E52744
H11D1-X007
H11D1
H11D2
H11D3
H11D4
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MOC8204M
Abstract: all datasheet phototransistor 4N38M OPTOCOUPLERs MARKING CODE H11D1 H11D1M H11D2M H11D3M
Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
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4N38M,
H11D1M,
H11D2M,
H11D3M,
MOC8204M
H11DXM
MOC8204M
MOC8204M,
all datasheet phototransistor
4N38M
OPTOCOUPLERs MARKING CODE
H11D1
H11D1M
H11D2M
H11D3M
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25E 106
Abstract: H11D1M
Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
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PDF
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4N38M,
H11D1M,
H11D2M,
H11D3M,
MOC8204M
H11DXM
MOC8204M
MOC8204M,
25E 106
H11D1M
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CNY37
Abstract: MCP3040 4n33 and 4n35 mct81 MRD901 4N25 CROSS MOC70T-1 MOC70T1 moc3020 datasheet application notes CQX47
Text: CR104/D GENERAL INSTRUMENT-TO-MOTOROLA OPTOELECTRONICS CROSS REFERENCE ISOLATORS General Instrument MOTOROLA Code General Instrument MOTOROLA Code 4N25, A 4N25, A A MCP3009, 10 MOC3009, 10 A 4N26 4N26 A MCP3011, 3011A MOC3011 A 4N27 4N27 A MCP3012 MOC3012
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CR104/D
MCP3009,
MOC3009,
MCP3011,
MOC3011
MCP3012
MOC3012
MCP3020,
MOC3020,
MCP3022,
CNY37
MCP3040
4n33 and 4n35
mct81
MRD901
4N25 CROSS
MOC70T-1
MOC70T1
moc3020 datasheet application notes
CQX47
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4pin opto isolator 610-2
Abstract: 307-064 4pin opto isolator 308-613 4-pin optoisolator 307064 SFH610-2 BZX61 ISO74 dual channel opto triac
Text: Issued November 1994 F18512 Transistor/Darlington opto-isolators A comprehensive range of 'general purpose' opto-isolators which consist of a light emitting diode coupled to a silicon phototransistor. The range comprises the following, and offers variations on Isolation Voltage, Current transfer ratio,
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F18512
SFH610-2
CNY17-1
CNY17-3
H11A1
MCT2201
20kHz.
IN4004
240Vac
4pin opto isolator 610-2
307-064
4pin opto isolator
308-613
4-pin optoisolator
307064
BZX61
ISO74
dual channel opto triac
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Untitled
Abstract: No abstract text available
Text: 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications_ HARRI S SEMICOND SECTOR 01E 4302271 37E Photon Coupled Isolator H11D1-H11D4 0G271ÖÖ A B C D E F G H J K V N P R S . rV i& absolute maximum ratings: 25°C W INFRARED EMITTING DIODE
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OCR Scan
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H11D1-H11D4
0G271Ã
33mW/Â
92CS-42662
92CS-429S1
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C3883
Abstract: GE H11D2 verin VDE0833 H11D1 GE
Text: MOTOROLA B SEMICONDUCTOR TECHNICAL DATA H11D1 H11D2 H11D3 H11D4 6-Pin DIP Optoisolators Transistor Output . . . co n s is t o f g a lliu m -a rs e n id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to h ig h v o lta g e , s ilico n , p h o to tra n s is to r d e te cto rs in a sta n d a rd 6-pin DIP package. T hey are d esig n ed fo r
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OCR Scan
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PDF
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H11D1
H11D3
E54915
C3883
GE H11D2
verin
VDE0833
H11D1 GE
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C1775
Abstract: DIODE CH71 c1771 C1770 H11DX C2079 C1772 C1774 C2090 H11D1
Text: GENL INST.Rt OPTOELEK "flfl DE | BÛTDlEfi □□□SÛT3 E | ~ t GENERAL INSTRUMENT PHOTOTRANSISTOR OPTOCOUPLERS P A C K A G E D IM E N S IO N S HI1D1/1Z HI1D2/2Z H11D3/3Z D E S C R IP T IO N r" j 6.86 .270 o WWW 8.89 (.350) 6.35 (.250) t 7.62 (.300) REF
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OCR Scan
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PDF
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T-m-80
3jhi55)
C2090
C2079
h11d1/1z
h11d3/3z
H11DX
C1770
C1772
C1774
C1775
DIODE CH71
c1771
C1770
C2079
C1772
C1774
C2090
H11D1
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TIL112
Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Text: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60
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OCR Scan
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PDF
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H11A1
H11A2
H11B1
H11B2
H11D2
H11D3
H11D4
MCA230
H11D1,
H11D2,
TIL112
MCA255
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IC VS 1307
Abstract: GE H11D2 H11B255 H11C1 H13B1 4N38 4N38A H11A10 h17a H11AA2
Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100 100 50 50 300 300 100 100 100 100 100 100 100 100 100 100 100
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OCR Scan
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PDF
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H11A10
H11AA1
H11AA2
H11D1
H11D2
H11D3
H11D4
4N38A
H11B1
H11B2
IC VS 1307
GE H11D2
H11B255
H11C1
H13B1
4N38
h17a
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MOC5010
Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
Text: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t
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OCR Scan
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PDF
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1N6264
1N6265
1N6266
4N25A
4N29A
4N32A
4N38A
L14C2
MOC5010
MOC7811
TIL31A
TIL34A
TIL903-1
OP8815
SCS11C3
h2181
TIL99
TIL143
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