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    H11A TRANSISTOR Search Results

    H11A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    H11A TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HIIAA

    Abstract: 4 n 608 608 diode optoelectronic ic ge h11a
    Text: G E SOLI » STATE □i »E|3a?5oai Dont^fl Optoelectronic Specification* T-V/-53 A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistor The GE Solid State H11A A 1 — H 11A A4 consist of two gallium arsenide infrared emitting


    OCR Scan     		T-V/-53 H11AA1-H11AA4 H11AA, 2N5308-D45H8 HIIAA 4 n 608 608 diode optoelectronic ic ge h11a PDF

    "RCMM" protocol

    Abstract: RCMM Philips ir receiver philips ir receiver transistor H11A 3.3v philips ir demodulator usb transmitter schematic diagram TSOP RECEIVER philips ir receiver IR receiver
    Text: Philips Semiconductors 1 Oct 98 Implementing a USB-to-Infrared Philips RCMM Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui Interconnectivity 1 Oct 98 Page 3


    Original     		OVU1000, OVU1000 PDIUSBH11) PDIUSBD11) "RCMM" protocol RCMM Philips ir receiver philips ir receiver transistor H11A 3.3v philips ir demodulator usb transmitter schematic diagram TSOP RECEIVER philips ir receiver IR receiver PDF

    "RCMM" protocol

    Abstract: philips RC-MM xtal 24mhz RCMM Philips TSIP5201 ir transmitter H11A 3.3v xtal 12MHz RC5 Infrared protocol philips PDIUSBD11
    Text: Philips Semiconductors 1 Oct 98 AN10012-01 previous filename: USB-IR_DONGLE.pdf Implementing a USB-to-Infrared (Philips RCMM) Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui


    Original     		AN10012-01 OVU1000, OVU1000 "RCMM" protocol philips RC-MM xtal 24mhz RCMM Philips TSIP5201 ir transmitter H11A 3.3v xtal 12MHz RC5 Infrared protocol philips PDIUSBD11 PDF

    "RCMM" protocol

    Abstract: xtal 12MHz ir receiver transistor H11A 3.3v diagram receiver and transmitter for microcontroller RC5 Infrared transmitter philips usb gamepad controller ir receiver 36khz P80C652 Force Sensitive Resistor
    Text: Philips Semiconductors 1 Oct 98 AN10011-01 previous filename: USB-IR DONGLE.pdf Implementing a USB-to-Infrared (Philips RCMM) Dongle - USB IR HID Device (OVU1000, Reference Design Ver 1.1) - USB Compound Hub with IR HID Device Author: Wim, Lemay Edited by: Wei Leong, Chui


    Original     		AN10011-01 OVU1000, OVU1000 "RCMM" protocol xtal 12MHz ir receiver transistor H11A 3.3v diagram receiver and transmitter for microcontroller RC5 Infrared transmitter philips usb gamepad controller ir receiver 36khz P80C652 Force Sensitive Resistor PDF

    TL 424 TRANSISTOR

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO c a VOE UL CSA SETI BS ® SEMKO OEMKO BAST NEMKO 6-Pin DIP Optoisolators Transistor Output H11A1 thru H11A5 STYLE 1 PLASTIC The H11A1 thru H11A5 devices consist of a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon phototransistor detector.


    OCR Scan     		H11A1 H11A5 H11A5 TL 424 TRANSISTOR PDF

    E91231

    Abstract: H11A1 H11A1X H11A2 H11A2X H11A3 H11A3X H11A4 H11A4X H11A5
    Text: H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802


    Original     		H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 E91231 H11A1 H11A1X H11A2 H11A2X H11A3 H11A3X H11A4 H11A4X H11A5 PDF

    h11a smd

    Abstract: E91231 H11A1 H11A1X H11A2 H11A2X H11A3 H11A3X H11A4 H11A4X
    Text: H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802


    Original     		H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 h11a smd E91231 H11A1 H11A1X H11A2 H11A2X H11A3 H11A3X H11A4 H11A4X PDF

    DTA114EX2

    Abstract: DTA114E DTC114E DTC114EX2 KIY transistors
    Text: Transistors/Surface Mounting Type 73 Digital Transistors with Two Internal Circuits • UMT5 • SMT5 Package Two transistors with internal resistors have been built into the 2125 UMT5 and 2916 (SMT5) packages. Since the circuit architecture is completed internally, no external connections are required, so less space is needed.


    OCR Scan     		UMA10N UMA11N UMG10N UMG11N FMA10A FMA11A DTA124EX2 DTA144EX2 DTA143T DTC143T DTA114EX2 DTA114E DTC114E DTC114EX2 KIY transistors PDF

    aiou

    Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA H 1 1 A V 1 ,A H 1 1 A V 2 ,A H 1 1 A V 3 ,A 6-Pin DIP Optoisolators Transistor Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.


    OCR Scan     		E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, IEC204/VDE0113 30A-02 730D-02 aiou H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176 PDF

    h11a smd

    Abstract: PIN DIODE 10V 10mA SMT E91231 H11A1 H11A1X H11A2 H11A2X H11A3 H11A3X H11A4
    Text: H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS z UL recognised, File No. E91231 Package Code " GG " Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATIONAPPROVALS z z VDE 0884 in 3 available lead form : - STD


    Original     		H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 h11a smd PIN DIODE 10V 10mA SMT E91231 H11A1 H11A1X H11A2 H11A2X H11A3 H11A3X H11A4 PDF

    h11a smd

    Abstract: h11a transistor E91231 H11A1 H11A1X H11A2 H11A2X H11A3 H11A3X H11A4
    Text: H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802


    Original     		H11A1X, H11A2X, H11A3X, H11A4X, H11A5X H11A1, H11A2, H11A3, H11A4, H11A5 h11a smd h11a transistor E91231 H11A1 H11A1X H11A2 H11A2X H11A3 H11A3X H11A4 PDF

    2N5779

    Abstract: L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FA LL R IS E M AX. M IN . M A X . P E A K E M IS S IO N W A V ELEN G TH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A lp = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . mW PAGE M A X . Ip CO NT.


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5779 L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327 PDF

    H11AA814A

    Abstract: No abstract text available
    Text: OPTOELECTRONICS 4 -P IN PHOTOTRANSISTOR OPTOCOUPLERS H 11A A 814 SERIES H 11A 817 SERIES P A C K A G E D IM E N S IO N S D E S C R IP T IO N The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, con­ nected in inverse parallel, driving a single silicon pho­


    OCR Scan     		H11AA814 H11A817 H11AA814: H11AA814A: H11A817: H11A817A H11A817B H11A817C H11A817D H11AA814A PDF

    H11AV2A

    Abstract: h11av2 H11AV1A harris H11AV1 H11AV3 H11AV1A H11AV3A 0730-2P H11AV3T
    Text: Optofsolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I IAV series consists o f a gallium arsen id e, in fra re d em itting d io d e co u p led with a silicon p h o to tra n sisto r in a dual in-line


    OCR Scan     		H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A 0730-2P. H11AV2A h11av2 H11AV1A harris H11AV1 H11AV3 H11AV1A H11AV3A 0730-2P H11AV3T PDF

    L14F1 phototransistor

    Abstract: L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator LED55B 2N5777 A3-H11 2N5778 L14G3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 phototransistor L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator 2N5777 A3-H11 2N5778 L14G3 PDF

    H11AV3

    Abstract: H11AV1A H11AV2A H11AV3A AN978 VDE0160 VDE0832 VDE0833 H11AV2
    Text: MOTOROLA B SEM ICONDUCTOR TECHNICAL DATA H11AV1,A H11AV2,A H11AV3,A 6-Pin D IP O p to iso la to rs T ransisto r Output Each device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. •


    OCR Scan     		E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, IEC204/VDE0113, VDE0160, VDE0832, VDE0833, circuit54 H11AV3 H11AV1A H11AV2A H11AV3A AN978 VDE0160 VDE0832 VDE0833 H11AV2 PDF

    L14H2

    Abstract: L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FA LL RISE MAX. MIN. MAX. PEA K EMISSION W AVELEN G TH TIME TIME Vp @ Pd PO@ lp=100mA lp= 100mA TYP. n. M ETER S TYP. n. SEC. T YP . n. SEC . mW


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14H2 L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3 PDF

    Phototransistor L14G3 application

    Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
    Text: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.


    OCR Scan     		100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 Phototransistor L14G3 application L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID STATE 01E 19698 D Optoelectronic Specifications- T-V/-S3 HARRIS SEIUCOND SECTOR 37E J> m 4302271 0D271bD fl • HAS A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared E m itting D iodes & NPN Silicon P h o to-T ransistor


    OCR Scan     		0D271bD H11AA1-H11AA4 H11AAI S-42662 92CS-429S1 PDF

    4n35 optocoupler spice model

    Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		TS-16949 ISO-14001, 4n35 optocoupler spice model L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011 PDF

    DH321

    Abstract: DH321 IC dl321 smps 10w 12V with IC DH321 dh321 POWER SWITCH optocoupler 817a DVD player circuit diagram for smps power supply fsdh321 equivalent DH321 817A OPTO-coupler
    Text: www.fairchildsemi.com FSDH321, FSDL321 Green Mode Fairchild Power Switch FPSTM Features • Internal Avalanche Rugged Sense FET • Consumes only 0.65W at 240VAC & 0.3W load with Advanced Burst-Mode Operation • Frequency Modulation for EMI Reduction • Precision Fixed Operating Frequency


    Original     		FSDH321, FSDL321 240VAC DH321 DH321 IC dl321 smps 10w 12V with IC DH321 dh321 POWER SWITCH optocoupler 817a DVD player circuit diagram for smps power supply fsdh321 equivalent DH321 817A OPTO-coupler PDF

    dh321 POWER SWITCH

    Abstract: Dh321 smps 10w 12V with IC DH321 dh321 pin diagram DL321
    Text: www.fairchildsemi.com FSDH321, FSDL321 Green Mode Fairchild Power Switch FPSTM Features • Internal Avalanche Rugged Sense FET • Consumes only 0.65W at 240VAC & 0.3W load with Advanced Burst-Mode Operation • Frequency Modulation for EMI Reduction • Precision Fixed Operating Frequency


    Original     		FSDH321, FSDL321 240VAC dh321 POWER SWITCH Dh321 smps 10w 12V with IC DH321 dh321 pin diagram DL321 PDF

    DH321

    Abstract: dl321 DH321 IC dh321 POWER SWITCH EER1625 smps 10w 12V with IC DH321 DVD player circuit diagram for smps power supply 817a opto-coupler ic circuit diagram DH-321 dh321 pin diagram
    Text: www.fairchildsemi.com FSDH321, FSDL321 Green Mode Fairchild Power Switch FPSTM Features • Internal Avalanche Rugged Sense FET • Consumes only 0.65W at 240VAC & 0.3W load with Advanced Burst-Mode Operation • Frequency Modulation for EMI Reduction • Precision Fixed Operating Frequency


    Original     		FSDH321, FSDL321 240VAC 230VAC FSDL321 FSDH321 FSDL0165RN FSDM0265RN FSDH0265RN FSDL0365RN DH321 dl321 DH321 IC dh321 POWER SWITCH EER1625 smps 10w 12V with IC DH321 DVD player circuit diagram for smps power supply 817a opto-coupler ic circuit diagram DH-321 dh321 pin diagram PDF

    IC SAF 0300 DATA

    Abstract: optocoupler H11A optocoupler H11B LINEAR OPTOCOUPLER smd optocoupler marking 1 H11d optocoupler smd diode 1016 SFH617A optocoupler DIN 50014 4N35 application note
    Text: CNY17F Vishay Semiconductors Optocoupler, Phototransistor Output, no Base Connection FEATURES • Isolation test voltage, 5300 VRMS A 1 6 NC • No base terminal connection for improved common mode interface immunity C 2 5 C • Long term stability NC 3 4 E


    Original     		CNY17F 2002/95/EC 2002/96/EC UL1577, E52744 CNY17F X001T X007T X008T X009T IC SAF 0300 DATA optocoupler H11A optocoupler H11B LINEAR OPTOCOUPLER smd optocoupler marking 1 H11d optocoupler smd diode 1016 SFH617A optocoupler DIN 50014 4N35 application note PDF