Untitled
Abstract: No abstract text available
Text: May 10 '02 S.Yoshiwatari May 10 '02 S.Miyashita T. Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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6MBI225U-120
10874a
MT5F1087a
MAY-17-
MAY-10-
H04-004-03
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Untitled
Abstract: No abstract text available
Text: DATE DRAWN CHECKED CHECKED Jan-18-'02 Jan-18-'02 Jan-18-'02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any
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Jan-18-
2SK3611-01MR
MS5F5122
H04-004-05
H04-004-03
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6MBI50U4A-120
Abstract: ED-4701 MS5F6015 MT5F12959
Text: SPECIFICATION Device Name : IGBT MODULE Type Name : 6MBI50U4A-120 Spec. No. Jan. 18 ’05 S.Miyashita Jan. 18 ’05 T.Miyasaka K.Yamada : Y.Seki MS5F 6015 MS5F6015 1 a 13 H04-004-07b R e v i s e d Date Classification Jan.-18 -’05 Enactment Oct.-25-’05
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6MBI50U4A-120
MS5F6015
H04-004-07b
P4/13)
H04-004-06b
H04-004-03a
6MBI50U4A-120
ED-4701
MS5F6015
MT5F12959
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PDF
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A-132
Abstract: YA962S6R
Text: DATE DRAWN CHECKED Feb.-28'-02 Feb.-28'-02 Feb.-28'-02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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Original
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YA962S6R
MS5D1558
H04-004-07
H04-004-03
A-132
YA962S6R
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PDF
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1MBH20D-060-S06TT
Abstract: No abstract text available
Text: M e ssrs. R o ckw eil Autom ation C o .Ltd. SPECIFICATION IG BT o! nny o use property lliu lliv for ¡5 h«ruin n ui l f i e r s o i'v c r wliM fie s f in i i June-11-1998 Date w»y ¡ n í o r ru n I i on M S5F-4086 uny They : No. lu Un* nrid Spec. i l rs<:U>svO
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1MBH20D-060-S06TT
MS5F-4086
June-11-1998
H04-004-05
July-15-1997
1MBH20D-05Q
MS5F408Ã
H04-004-03
r4088
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PDF
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TJS10
Abstract: fuji IGBT e2ba
Text: Ratings and characteristics of Fuji IGBT 1 M B H 1 OD . Out!ine Drawing 6 2. Equivalent circuit C:Collector FWD C O N N F C T IO N CATE <2 > C O L L E C T O R O © D 3. Absolute maximum ratings E M IT T E R ( 10=25*0 ) Symbols Rat ings Collector-Emitter Voltage
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H04-004-03
553fi
TJS10
fuji IGBT
e2ba
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PDF
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DDD4425
Abstract: DDD4432 DDD443D
Text: SPEC 1F I C A T I O N DEVICE NAME TTPE NAME SPEC. No. G DATE B T Jun.-25-1998 r# F u This \ ; DATE 0RAW N¡ / U NAME j i Specification E is l e subject c t to r i c change C o . , Ltd. without notice. APPROVED Fuji Electric CoJLtd. K .' íÍ ' u a ^ i^li.
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5D-120
H04-004-07
0D04423
MS5F3515
H04-004-03
DDDMM33
0QD4143M
DDD4425
DDD4432
DDD443D
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PDF
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GDM207
Abstract: No abstract text available
Text: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.
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MS5F3686
223fl7c12
0G0420Q
MS5F3686
GDM207
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PDF
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Untitled
Abstract: No abstract text available
Text: S P E C I F I C A T I ON DEVICE NAHE :_ | g g j TYPE NAMF 1 M B H 5 0 — Of i O SPEC. No. MS 5 F 3 5 2 4 DATE : Jun. -25-1996 Fuji DATE DRAWN CHECKED NAME E l e c t r i c This Specification is subject to change without noti ce. APPROVED Fuji Electric CoJJd.
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MS5F3524
0D04233
H04-004-07
H04-004-03
000ME41
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PDF
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ESJA52-12A
Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA52-12A
0D047b7
ESJA520DA
HIGH VOLTAGE DIODE 12kv
22VZ
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PDF
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t32 1-l
Abstract: No abstract text available
Text: Ratings and characteristics of Fuji IGBT 1 Í V 1 B H 3 D — 1 2 2. Equivalent circuit 1. Out Iine Drawing C:Collector î G :Gate FWD o Ò E:Emitter C O M N FC T I ON SATE CO LLECTO R © E M IT T E R 3. Absolute maximum ratings . C Tc=250C Ratings
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H04-004-03
Q004515
t32 1-l
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PDF
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HIGH VOLTAGE DIODE kv
Abstract: ESJA82-10A 223S7
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage si[icon diode ESJA82-10A made by FUJ1 ELECTR1C CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION . The diode shall be marked with Cathode Mark and Lot No.
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ESJA82-10A
0004A15
ESJA82-Ã
223S7TS
HIGH VOLTAGE DIODE kv
223S7
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PDF
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DIODE 914
Abstract: ESJA53-18A GDD4775
Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A nade by RJJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.
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ESJA53-18A
sha11
DQ04773
22367TE
0D0M774
GDD4775
ESJA53-COA
0D0477b
DIODE 914
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PDF
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ESJA83
Abstract: ESJA83-16 ESJA83-16A
Text: SPECIFICATION u e v ic e T vd « S d s c nam e N am e . ; i l 1fe ll T U I k o g c : E S J A 8 3 —16A i i o u i u iu u g . . No. ivi iîï* nil il * * i 15 S ilfi •íg 1 ¡rS íí*]í • 5? ' ll» f H U ] liti* ?Js¿ Fuji Electric Co.,Ltd. Matsumoto Factory
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ESJA83â
H04-004-07
ESJA83-16A
ESJA83-16
ESJA83
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PDF
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diode T-71
Abstract: ESJA57-04A
Text: 1. SCOPE This specification provide the-ratings and the requirements for high voltage silicon diode ESJA57-04A made by FUJI ELECTRIC CO. .LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENT FtCAT 1ON The diods shall be marked with Cathode Mark and Lot No.
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ESJA57-04A
E53fl7TS
ESJA57-CE1A
H53fi7TE
diode T-71
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PDF
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1MBH10D-120
Abstract: No abstract text available
Text: *> SPECIFICATION DEVICE NAME TYPE NAME SPEC. No. DATE IG B T 1M B H 1 0 D - 1 2 0 MS 5 F 4-C9 f July-15-1997 Fuj i Electr ic Co.,Ltd. Matsumoto Factory DATE DRAWN NAME M / s -n CHECKED I Fuji Electric CaJLid /l/a o .’t i r/ii. f f APPROVED 7/ /? fiJyi MS5F4091
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July-15
MS5F4091
H04-004-07
July-15-1997
MS5F40S1
1MBH10D-120
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PDF
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ERW07-120
Abstract: No abstract text available
Text: S P E C I F I C A T I O N DEVICE NAME : SILICON DIODE TYPE NAME : E RWO 7 - 1 2 0 SPEC. No. DATE Fuji E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric C o d i c i DRAWN I A. CHECKED 1/6 Y 0257-R-004a
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0257-R-004a
T0-220AC
20kHz
Duty50X
ERW07-120
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PDF
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MMW4
Abstract: F5023
Text: p w tT "iltf T l* f C a ll it p aM h*' W t N 11 , M • * prtptrly pi r tp w lM M , «or «M 1w Q« iw iv lM t u ito g b a n a l« » irtO « u l lM>. « «Hc4mM li 4M xr; «tfi«1ú*Vii P9T lNr ü>r oí • »? 0 *<lifc F < |l Tib N*Urf>l i»a ih» lnror#iaiiaa
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MS5F443Ã
MM-W4-07
MS5F4431
S5F443I
MMW4
F5023
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PDF
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Untitled
Abstract: No abstract text available
Text: ThI« m alarial and ha Information haraln la 1ha praparty of Fuji Elaelrio Co.pltd . Thay »hall ba nalthar raproduead, coplad, lanl. or dlacloaad In any way whataoavar for tha uta of any third party nor uaad for lh« manufacturing purpoaai w ithout tha axpraai wrtttan conMnt of Fuji ElaoOHc Co.Ltd.
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6MBP15RY060
MS6M0362
H04-004-07
6MBP15RY060.
6MBP15RY060)
H04-004-03
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PDF
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Untitled
Abstract: No abstract text available
Text: SPECIFICA TIO N Th ¿i material and ih« Information herein i« the property of Fuji Elee toc Co .Ltd They shveH be neither ««produced copied lent, or disclosed In any way wheisoeva* lor the uS6 of any third partynor used for the manufacturing purposes w ithout
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OCR Scan
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00G5371
H04-004-03
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PDF
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME :_ I 6 B T TYPE NAME : SPEC. No. 1M B C 1 0 - 0 6 0 : M S5 F 3 5 1 9 DATE_ :_ Jun.-25-1996 Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED A NAME APPROVED Fuji Electric C oJJd
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H04-004-07
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PDF
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Untitled
Abstract: No abstract text available
Text: Ratings and characteristics of Fuji IG8T 1 M B H 1 5 — 6 2. Equivalent c ir c u it I. Out I ine Drawing C:Collector O A G:Gate o FWD Ò E:Enii t t e r r.OWNFCTION CATE © COLLECTOR EMITTER © D (2 3. Absolute maximum ra tin g s ( Tc=25°C ) Symbo1s
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H04-004-03
Q00M552
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PDF
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ERW01-060
Abstract: No abstract text available
Text: SPECI F I CAT I ON DEVICE NAME : SILICON DIODE TYPE NAME : E RW O 1 - 0 6 0 SPEC. No. : DATE F u j i E l e c t r i c Co. Ltd. T his S p e c ific a tio n is subject to change without notice. DRAWN [ CKKXEO DATE - NAME approved Fuji Electric Cadici. 1/6 R a t i n g s and c h a r a c t e r i s t i c s of Fuji
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O-220AC
20kHz
Duty50X
H04-004-03
ERW01-060
ERW01-060
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PDF
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NANE : E R W 0 8 — 1 20 SPEC. No. DATE_ F u j i E l e c t r i c Co.Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric C o JJd - CHECKED 1 - I DWG.N0. DRAWN
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T0-22DAC
20kHz
H04-004-03
ERTO8-120
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