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    Untitled

    Abstract: No abstract text available
    Text: May 10 '02 S.Yoshiwatari May 10 '02 S.Miyashita T. Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without


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    PDF 6MBI225U-120 10874a MT5F1087a MAY-17- MAY-10- H04-004-03

    Untitled

    Abstract: No abstract text available
    Text: DATE DRAWN CHECKED CHECKED Jan-18-'02 Jan-18-'02 Jan-18-'02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any


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    PDF Jan-18- 2SK3611-01MR MS5F5122 H04-004-05 H04-004-03

    6MBI50U4A-120

    Abstract: ED-4701 MS5F6015 MT5F12959
    Text: SPECIFICATION Device Name : IGBT MODULE Type Name : 6MBI50U4A-120 Spec. No. Jan. 18 ’05 S.Miyashita Jan. 18 ’05 T.Miyasaka K.Yamada : Y.Seki MS5F 6015 MS5F6015 1 a 13 H04-004-07b R e v i s e d Date Classification Jan.-18 -’05 Enactment Oct.-25-’05


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    PDF 6MBI50U4A-120 MS5F6015 H04-004-07b P4/13) H04-004-06b H04-004-03a 6MBI50U4A-120 ED-4701 MS5F6015 MT5F12959

    A-132

    Abstract: YA962S6R
    Text: DATE DRAWN CHECKED Feb.-28'-02 Feb.-28'-02 Feb.-28'-02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without


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    PDF YA962S6R MS5D1558 H04-004-07 H04-004-03 A-132 YA962S6R

    1MBH20D-060-S06TT

    Abstract: No abstract text available
    Text: M e ssrs. R o ckw eil Autom ation C o .Ltd. SPECIFICATION IG BT o! nny o use property lliu lliv for ¡5 h«ruin n ui l f i e r s o i'v c r wliM fie s f in i i June-11-1998 Date w»y ¡ n í o r ru n I i on M S5F-4086 uny They : No. lu Un* nrid Spec. i l rs<:U>svO


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    PDF 1MBH20D-060-S06TT MS5F-4086 June-11-1998 H04-004-05 July-15-1997 1MBH20D-05Q MS5F408Ã H04-004-03 r4088

    TJS10

    Abstract: fuji IGBT e2ba
    Text: Ratings and characteristics of Fuji IGBT 1 M B H 1 OD . Out!ine Drawing 6 2. Equivalent circuit C:Collector FWD C O N N F C T IO N CATE <2 > C O L L E C T O R O © D 3. Absolute maximum ratings E M IT T E R ( 10=25*0 ) Symbols Rat ings Collector-Emitter Voltage


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    PDF H04-004-03 553fi TJS10 fuji IGBT e2ba

    DDD4425

    Abstract: DDD4432 DDD443D
    Text: SPEC 1F I C A T I O N DEVICE NAME TTPE NAME SPEC. No. G DATE B T Jun.-25-1998 r# F u This \ ; DATE 0RAW N¡ / U NAME j i Specification E is l e subject c t to r i c change C o . , Ltd. without notice. APPROVED Fuji Electric CoJLtd. K .' íÍ ' u a ^ i^li.


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    PDF 5D-120 H04-004-07 0D04423 MS5F3515 H04-004-03 DDDMM33 0QD4143M DDD4425 DDD4432 DDD443D

    GDM207

    Abstract: No abstract text available
    Text: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.


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    PDF MS5F3686 223fl7c12 0G0420Q MS5F3686 GDM207

    Untitled

    Abstract: No abstract text available
    Text: S P E C I F I C A T I ON DEVICE NAHE :_ | g g j TYPE NAMF 1 M B H 5 0 — Of i O SPEC. No. MS 5 F 3 5 2 4 DATE : Jun. -25-1996 Fuji DATE DRAWN CHECKED NAME E l e c t r i c This Specification is subject to change without noti ce. APPROVED Fuji Electric CoJJd.


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    PDF MS5F3524 0D04233 H04-004-07 H04-004-03 000ME41

    ESJA52-12A

    Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
    Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.


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    PDF ESJA52-12A 0D047b7 ESJA520DA HIGH VOLTAGE DIODE 12kv 22VZ

    t32 1-l

    Abstract: No abstract text available
    Text: Ratings and characteristics of Fuji IGBT 1 Í V 1 B H 3 D — 1 2 2. Equivalent circuit 1. Out Iine Drawing C:Collector î G :Gate FWD o Ò E:Emitter C O M N FC T I ON SATE CO LLECTO R © E M IT T E R 3. Absolute maximum ratings . C Tc=250C Ratings


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    PDF H04-004-03 Q004515 t32 1-l

    HIGH VOLTAGE DIODE kv

    Abstract: ESJA82-10A 223S7
    Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage si[icon diode ESJA82-10A made by FUJ1 ELECTR1C CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION . The diode shall be marked with Cathode Mark and Lot No.


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    PDF ESJA82-10A 0004A15 ESJA82-Ã 223S7TS HIGH VOLTAGE DIODE kv 223S7

    DIODE 914

    Abstract: ESJA53-18A GDD4775
    Text: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A nade by RJJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.


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    PDF ESJA53-18A sha11 DQ04773 22367TE 0D0M774 GDD4775 ESJA53-COA 0D0477b DIODE 914

    ESJA83

    Abstract: ESJA83-16 ESJA83-16A
    Text: SPECIFICATION u e v ic e T vd « S d s c nam e N am e . ; i l 1fe ll T U I k o g c : E S J A 8 3 —16A i i o u i u iu u g . . No. ivi iîï* nil il * * i 15 S ilfi •íg 1 ¡rS íí*]í • 5? ' ll» f H U ] liti* ?Js¿ Fuji Electric Co.,Ltd. Matsumoto Factory


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    PDF ESJA83â H04-004-07 ESJA83-16A ESJA83-16 ESJA83

    diode T-71

    Abstract: ESJA57-04A
    Text: 1. SCOPE This specification provide the-ratings and the requirements for high voltage silicon diode ESJA57-04A made by FUJI ELECTRIC CO. .LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENT FtCAT 1ON The diods shall be marked with Cathode Mark and Lot No.


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    PDF ESJA57-04A E53fl7TS ESJA57-CE1A H53fi7TE diode T-71

    1MBH10D-120

    Abstract: No abstract text available
    Text: *> SPECIFICATION DEVICE NAME TYPE NAME SPEC. No. DATE IG B T 1M B H 1 0 D - 1 2 0 MS 5 F 4-C9 f July-15-1997 Fuj i Electr ic Co.,Ltd. Matsumoto Factory DATE DRAWN NAME M / s -n CHECKED I Fuji Electric CaJLid /l/a o .’t i r/ii. f f APPROVED 7/ /? fiJyi MS5F4091


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    PDF July-15 MS5F4091 H04-004-07 July-15-1997 MS5F40S1 1MBH10D-120

    ERW07-120

    Abstract: No abstract text available
    Text: S P E C I F I C A T I O N DEVICE NAME : SILICON DIODE TYPE NAME : E RWO 7 - 1 2 0 SPEC. No. DATE Fuji E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric C o d i c i DRAWN I A. CHECKED 1/6 Y 0257-R-004a


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    PDF 0257-R-004a T0-220AC 20kHz Duty50X ERW07-120

    MMW4

    Abstract: F5023
    Text: p w tT "iltf T l* f C a ll it p aM h*' W t N 11 , M • * prtptrly pi r tp w lM M , «or «M 1w Q« iw iv lM t u ito g b a n a l« » irtO « u l lM>. « «Hc4mM li 4M xr; «tfi«1ú*Vii P9T lNr ü>r oí • »? 0 *<lifc F < |l Tib N*Urf>l i»a ih» lnror#iaiiaa


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    PDF MS5F443Ã MM-W4-07 MS5F4431 S5F443I MMW4 F5023

    Untitled

    Abstract: No abstract text available
    Text: ThI« m alarial and ha Information haraln la 1ha praparty of Fuji Elaelrio Co.pltd . Thay »hall ba nalthar raproduead, coplad, lanl. or dlacloaad In any way whataoavar for tha uta of any third party nor uaad for lh« manufacturing purpoaai w ithout tha axpraai wrtttan conMnt of Fuji ElaoOHc Co.Ltd.


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    PDF 6MBP15RY060 MS6M0362 H04-004-07 6MBP15RY060. 6MBP15RY060) H04-004-03

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICA TIO N Th ¿i material and ih« Information herein i« the property of Fuji Elee toc Co .Ltd They shveH be neither ««produced copied lent, or disclosed In any way wheisoeva* lor the uS6 of any third partynor used for the manufacturing purposes w ithout


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    PDF 00G5371 H04-004-03

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME :_ I 6 B T TYPE NAME : SPEC. No. 1M B C 1 0 - 0 6 0 : M S5 F 3 5 1 9 DATE_ :_ Jun.-25-1996 Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED A NAME APPROVED Fuji Electric C oJJd


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    PDF H04-004-07

    Untitled

    Abstract: No abstract text available
    Text: Ratings and characteristics of Fuji IG8T 1 M B H 1 5 — 6 2. Equivalent c ir c u it I. Out I ine Drawing C:Collector O A G:Gate o FWD Ò E:Enii t t e r r.OWNFCTION CATE © COLLECTOR EMITTER © D (2 3. Absolute maximum ra tin g s ( Tc=25°C ) Symbo1s


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    PDF H04-004-03 Q00M552

    ERW01-060

    Abstract: No abstract text available
    Text: SPECI F I CAT I ON DEVICE NAME : SILICON DIODE TYPE NAME : E RW O 1 - 0 6 0 SPEC. No. : DATE F u j i E l e c t r i c Co. Ltd. T his S p e c ific a tio n is subject to change without notice. DRAWN [ CKKXEO DATE - NAME approved Fuji Electric Cadici. 1/6 R a t i n g s and c h a r a c t e r i s t i c s of Fuji


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    PDF O-220AC 20kHz Duty50X H04-004-03 ERW01-060 ERW01-060

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NANE : E R W 0 8 — 1 20 SPEC. No. DATE_ F u j i E l e c t r i c Co.Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric C o JJd - CHECKED 1 - I DWG.N0. DRAWN


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    PDF T0-22DAC 20kHz H04-004-03 ERTO8-120