H01N60SJ Search Results

H01N60SJ Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
H01N60SJ		Hi-Sincerity Mocroelectronics	N-channel High Voltage MOSFET		Original	PDF

H01N60SJ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MOSFET MARK y2 Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1 Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	PDF	MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
MOSFET MARK y2 Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor	Original	PDF	MOS200501 H01N60S 183oC 217oC 260oC 245oC 10sec H01N60SI, MOSFET MARK y2 transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60SI
MOSFET MARK y2 Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to	Original	PDF	MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI

Catalog Datasheet

MFG & Type

PDF

Document Tags

MOSFET MARK y2

Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

Original

PDF

MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1

MOSFET MARK y2

Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor

Original

PDF

MOS200501 H01N60S 183oC 217oC 260oC 245oC 10sec H01N60SI, MOSFET MARK y2 transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60SI

MOSFET MARK y2

Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

Original

PDF

MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI