GaN TRANSISTOR 180
Abstract: Gan transistor
Text: polyfet rf devices GX4441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation
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GX4441
GaN TRANSISTOR 180
Gan transistor
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GX4441
Abstract: No abstract text available
Text: polyfet rf devices GX4441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation
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GX4441
1-3000Mhz
GX4441
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MGCF21
Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount
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L8821P
LB421
L8821P
LP721
SM341
LQ821
SQ701
SR401
MGCF21
LY942
MOSFET 50 amp 1000 volt
Gx4002
5 watt hf mosfet
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