FF1200R17KE3
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FF1200R17KE3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& & $ 4 ' ( 4 ( < & $ A & / B A ( %& & ' & ( ' *+ , -.
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FF1200R17KE3
FF1200R17KE3
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eupec diode e12
Abstract: FF1200R17KE3
Text: Technische Information / technical information IGBT-Module IGBT-modules FF1200R17KE3 Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $ %& & $ 4 ' ( 4 ( < & $ A & / B A ( %& & ' & ( ' *+ , -.
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FF1200R17KE3
eupec diode e12
FF1200R17KE3
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Z2SMB33
Abstract: zener DIODE MARKING code GM
Text: Z2SMB3V3 . Z2SMB200 2.0 W Surface Mounted Glass Passivated Zener Diode Dimensions in mm. CASE: SMB/DO-214AA Voltage 3V3 to 200 V Power 2.0 W 5.1 ± 0.3 1.25 ± 0.25 • Glass passivated junction • The plastic material carries UL 94 V-0 • Low profile package
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Z2SMB200
SMB/DO-214AA
EIA-RS-481)
Z2SMB33
zener DIODE MARKING code GM
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diode code GW 42
Abstract: ZENER 3v3 smb DO-214AA 3v3 diode GU do-214aA zener code jb Z2SMB10 Z2SMB11 Z2SMB12 Z2SMB13 Z2SMB16
Text: Z2SMB3V3 . Z2SMB200 2.0 W Surface Mounted Glass Passivated Zener Diode Dimensions in mm. CASE: SMB/DO-214AA Voltage 3V3 to 200 V Power 2.0 W 5.1 ± 0.3 1.25 ± 0.25 • Glass passivated junction • The plastic material carries UL 94 V-0 • Low profile package
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Z2SMB200
SMB/DO-214AA
EIA-RS-481)
diode code GW 42
ZENER 3v3 smb
DO-214AA 3v3
diode GU do-214aA
zener code jb
Z2SMB10
Z2SMB11
Z2SMB12
Z2SMB13
Z2SMB16
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2sk4206g
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features Package Low noise voltage NV
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2002/95/EC)
2SK4206G
2sk4206g
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features Package Low noise voltage NV
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2002/95/EC)
2SK4206
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PDF
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2SK4206
Abstract: u265
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Features Package Low noise voltage NV
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2002/95/EC)
2SK4206
2SK4206
u265
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PDF
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2SK4206
Abstract: 2SK42
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206 Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2002/95/EC)
2SK4206
2SK4206
2SK42
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2SK4206
Abstract: Marking code 9H 2SK4206G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2002/95/EC)
2SK4206G
2SK4206
Marking code 9H
2SK4206G
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PDF
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2SK4206
Abstract: 2SK4206G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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Original
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2002/95/EC)
2SK4206G
2SK4206
2SK4206G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK4206G Silicon N-channel junction FET For impedance conversion in low frequency For electret capacitor microphone • Package Low noise voltage NV High voltage gain GV
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2002/95/EC)
2SK4206G
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613SPV
Abstract: TLE 427 marking CDM2 MBRD360 GV 475 diode TLE6389-2 PG-DSO-14-1 p-mosfet bsp B82479-A1473-M BSP613P
Text: Step-Down DC/DC Controller 1 Overview 1.1 Features • • • • • • • • • • • • • • • 1 TLE 6389 Input voltage range from < 5V up to 60V Output voltage: 5V fixed or adjustable 7V to 15V) Output voltage accuracy: 3% Output current up to 2.3A
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360kHz
613SPV
TLE 427
marking CDM2
MBRD360
GV 475 diode
TLE6389-2
PG-DSO-14-1
p-mosfet bsp
B82479-A1473-M
BSP613P
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MBRD360
Abstract: No abstract text available
Text: Step-Down DC/DC Controller 1 Overview 1.1 Features • • • • • • • • • • • • • • • 1 TLE 6389 Input voltage range from < 5V up to 60V Output voltage: 5V fixed or adjustable 7V to 15V) Output voltage accuracy: 3% Output current up to 2.3A
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360kHz
MBRD360
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6389-3GV50
Abstract: GV 475 diode GV50 gv-50 6389-2gv 63893GV50 6389GV 613spv 3gv50 MBRD360
Text: Step-Down DC/DC Controller TLE 6389 Datasheet 1 Overview 1.1 Features • • • • • • • • • • • • • 1 Input voltage range from < 5V up to 60V Output voltage: 5V fixed or adjustable 7V to 15V) Output voltage accuracy: 3% Output current up to 2.3A
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350kHz
P-DSO-14-3,
6389-3GV50
GV 475 diode
GV50
gv-50
6389-2gv
63893GV50
6389GV
613spv
3gv50
MBRD360
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gv 275 diode
Abstract: SMC7G30US60
Text: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit
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SMC7G30US60
21-PM-BA
gv 275 diode
SMC7G30US60
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OF IGBT
Abstract: SMC7G30US60 Fast Recovery Rectifier, 300V
Text: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit
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SMC7G30US60
21-PM-BA
OF IGBT
SMC7G30US60
Fast Recovery Rectifier, 300V
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THYRISTOR 30A 300V
Abstract: THYRISTOR 1A 300V thyristor 12V it 1A thyristor inverter 7MBR30SC060 power supply 12v 30a schematic
Text: 7MBR30SC060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 30A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive
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7MBR30SC060
THYRISTOR 30A 300V
THYRISTOR 1A 300V
thyristor 12V it 1A
thyristor inverter
7MBR30SC060
power supply 12v 30a schematic
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7MBR75UB120
Abstract: No abstract text available
Text: 7MBR75UB120 IGBT Modules IGBT MODULE U series 1200V / 75A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier
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7MBR75UB120
00V/div
7MBR75UB120
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600v 30a IGBT
Abstract: sine wave power inverter schematic sine wave inverter thyristor 12V it 1A voltage inverter schematic 7MBR30SC060
Text: 7MBR30SC060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 30A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive
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7MBR30SC060
600v 30a IGBT
sine wave power inverter schematic
sine wave inverter
thyristor 12V it 1A
voltage inverter schematic
7MBR30SC060
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3843B
Abstract: UC3842BL UC3843BL UC3842B application to 3843b application note uc3842b equivalent IC 3843B UC3842B PWM 3843B UC3842BL-D08-T
Text: UNISONIC TECHNOLOGIES CO., LTD UC3842B/3843B LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE CONTROLLERS DESCRIPTION The UTC UC3842B/3843B are specifically designed for off-line and dc-to-dc converter applications offering the designer a cost-effective solution with minimal external components.
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UC3842B/3843B
UC3842B/3843B
UC3842B
UC3843B
250kHz
500kHz
QW-R103-012
3843B
UC3842BL
UC3843BL
UC3842B application
to 3843b application note
uc3842b equivalent
IC 3843B
PWM 3843B
UC3842BL-D08-T
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7MBR75UB120
Abstract: 7MBR75UB-120 12 volt dc to 120 volt ac Inverter schematic
Text: 7MBR75UB120 IGBT Modules IGBT MODULE U series 1200V / 75A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier
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7MBR75UB120
00V/div
7MBR75UB120
7MBR75UB-120
12 volt dc to 120 volt ac Inverter schematic
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3FW transistor
Abstract: apc2040 MAX3669 MAX3669EHJ MAX3669ETG MAX3693 ww h 845 1 r 3FW 66
Text: 19-1575; Rev 1; 5/04 KIT ATION EVALU ABLE AVAIL +3.3V, 622Mbps SDH/SONET Laser Driver with Current Monitors and APC Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ +3.3V or +5.0V Single-Supply Operation 40mA Supply Current at +3.3V Programmable Bias Current from 1mA to 80mA
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MAX3669
622Mbps
3FW transistor
apc2040
MAX3669
MAX3669EHJ
MAX3669ETG
MAX3693
ww h 845 1 r
3FW 66
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3FW transistor
Abstract: 3FW 72 transistor EMCORE VCSEL EY transistor DS1858 MAX3740A MAX3740AETG 3FW 17 transistor
Text: 19-3118; Rev 1; 6/04 3.2Gbps SFP VCSEL Driver with Diagnostic Monitors The MAX3740A operates up to 3.2Gbps. It can switch up to 15mA of laser modulation current and source up to 15mA of bias current. Adjustable temperature compensation is provided to keep the optical extinction
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MAX3740A
3FW transistor
3FW 72 transistor
EMCORE VCSEL
EY transistor
DS1858
MAX3740A
MAX3740AETG
3FW 17 transistor
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UC3842B UC3843B
Abstract: 3843B
Text: UNISONIC TECHNOLOGIES CO., LTD UC3842B/3843B LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE CURRENT MODE CONTROLLERS DESCRIPTION The UTC UC3842B/3843B are specifically designed for off-line and dc-to-dc converter applications offering the designer a cost-effective solution with minimal external components.
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UC3842B/3843B
UC3842B/3843B
UC3842B
UC3843B
250kHz
500kHz
QW-R103-012
UC3842B UC3843B
3843B
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