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    GUNN DIODE PART NUMBER 1-8 GHZ Search Results

    GUNN DIODE PART NUMBER 1-8 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GUNN DIODE PART NUMBER 1-8 GHZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CMD1210

    Abstract: No abstract text available
    Text: ALPHA IND/ CTL MICROüJAVE □565303 OQQQGMO □ r OSE D T-Ô7 - / CMD SERIES GUNN DIODES Features • Available from 4 GHz through 110 GHz • High Efficiency • Low Noise • Maximum Output Power/Frequency Levels • Pulsed Devices with Several Watts


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    gunn diodes

    Abstract: alpha GUNN OSCILLATORS DGB8381 DGB8625 Gunn Diode x-band DGB8332 gunn x-band gunn diode DGB7131 DGB8281
    Text: ALPHA IN » / SEMICONDUCTOR 4ÔE D • 0SÔ5443 00013=15 fln ■ ALP _ Gunn Diodes To~f-\ \ Features ■ ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications


    OCR Scan     		power001 gunn diodes alpha GUNN OSCILLATORS DGB8381 DGB8625 Gunn Diode x-band DGB8332 gunn x-band gunn diode DGB7131 DGB8281 PDF

    Untitled

    Abstract: No abstract text available
    Text: Gunn Diodes Features • ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications High Reliability Special Screening to Customer Requirements Available Description


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    gunn diode radar

    Abstract: gunn diode x band radar gunn diode 10.5 ghz radar gunn diode varactor diode for x band radar Gunn Diode MO87108 x band gunn diode gunn diode oscillator gunn diode datasheet
    Text: GUNN OSCILLATORS Voltage Controlled TM MO87108 – MO9405 Features ● Low Cost ● High-Volume Design ● Various Output Power Levels ● Pulsed DC Input Voltage ● Low-Power Consumption ● FM CW Operation Applications ● Intrusion Alarm Systems ●


    Original     		MO87108 MO9405 WR-42 UG/595-U, MO9070 UG599/U WR-28 gunn diode radar gunn diode x band radar gunn diode 10.5 ghz radar gunn diode varactor diode for x band radar Gunn Diode MO87108 x band gunn diode gunn diode oscillator gunn diode datasheet PDF

    gunn diode generator

    Abstract: No abstract text available
    Text: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.


    OCR Scan     		CT3513-1 gunn diode generator PDF

    Untitled

    Abstract: No abstract text available
    Text: A Telecommunications Microwave MICROWAVE TECHNOLOGY TRAINING SYSTEM MODEL 8090 Complete Microwave Technology Training System, with hybrid tee and PIN diode, Model 8090-2 GENERAL DESCRIPTION The Microwave Technology Training System, Model 8090, is part of the Lab-Volt telecommunications


    Original     		Feature28113-00 28113-A0 PDF

    Microwave oscillator

    Abstract: microwave
    Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description


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    FMCW

    Abstract: No abstract text available
    Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 220 V - 60 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description


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    Untitled

    Abstract: No abstract text available
    Text: 8090 Microwave Technology Training System LabVolt Series Datasheet Festo Didactic en 240 V - 50 Hz 03/2015 Microwave Technology Training System, LabVolt Series, 8090 Table of Contents General Description


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    GUNN OSCILLATORS

    Abstract: gunn diode 10.5 ghz
    Text: GUNN OSCILLATORS Voltage Controlled TM MO87108 – MO9405 Features ● Low Cost ● High-Volume Design ● Various Output Power Levels ● Pulsed DC Input Voltage ● Low-Power Consumption ● FM CW Operation Applications ● Intrusion Alarm Systems ●


    Original     		MO87108 MO9405 Number95-U, WR-42 UG/595-U, MO9070 UG599/U WR-28 GUNN OSCILLATORS gunn diode 10.5 ghz PDF

    Gunn Diode e band

    Abstract: No abstract text available
    Text: M an A M P com pany Balanced Mixers 26.5 - 1 10 GHz 5-XX-700 Series V3.00 Features Figure 1 • • Low Noise Figure and Conversion Loss Broad IF Bandwidth • • Low LO Drive Pow er Small Size and Lightweight =L —- A Description 'o 1 * d 1- 1 ° n


    OCR Scan     		5-XX-700 Gunn Diode e band PDF

    8-12 GHz Yig Tuned Oscillator

    Abstract: PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators
    Text: PHILIPS & Microwave Products s iv a ts a m The Company SIVERS IMA In January 1984 the two microwave companies Sivers Lab est. 1951 and I.M.A. (est. 1975) were merged into one of the leading European supplier of microwave products: SIVERS IMA AB. The main product lines are Switches, Rotary Joints,


    OCR Scan     		MIL-C-45662) S-126 17173-SILAB-S S-163 8-12 GHz Yig Tuned Oscillator PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators PDF

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4 PDF

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application PDF

    ML46474

    Abstract: ML46450
    Text: Ceramic GaAs Constant Gamma Tuning Varactor Diodes tr o B H n m The ML46450 and ML46470 Series of tuning varactors are hyperabrupt junction gallium arsenide devices featuring a constant gamma. These series offer especially high "Q factors" up to 4000 that permit excellent


    OCR Scan     		ML46450 ML46470 ML46474 PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30 PDF

    MICROWAVE ASSOCIATES

    Abstract: Design of H.F. Wideband Power Transformers varian klystron 10 GHz gunn diode double balanced mixer RHG melabs circulator radar gunn diode Gunn Diode gunn diode varian design of multi section coupler
    Text: PASSIVE COMPONENTS: A BRIEF HISTORY T Fig. 1 The birth of radar. Courtesy of Varian Associates. ▼ he microwave industry is tied to the birth of radar. Figure 1 is a whimsical look at the birth of radar as portrayed in a 1960s ad for Bomac tubes. In reality, radar


    Original     		1960s MICROWAVE ASSOCIATES Design of H.F. Wideband Power Transformers varian klystron 10 GHz gunn diode double balanced mixer RHG melabs circulator radar gunn diode Gunn Diode gunn diode varian design of multi section coupler PDF

    pin diagram for IC cd 1619 fm receiver

    Abstract: ml 1136 triac Transistor 337 DIODE 2216 yagi-uda Antenna bistable multivibrator using ic 555 NEC plasma tv schematic diagram Digital Panel Meter PM 428 555 solar wind hybrid charge controller CLOVER-2000
    Text: Index Editor’s Note: Except for commonly used phrases and abbreviations, topics are indexed by their noun names. Many topics are also cross-indexed. The letters “ff” after a page number indicate coverage of the indexed topic on succeeding pages. A separate Projects index follows the main index.


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    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan     		Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 PDF

    gunn diode ghz s-parameter

    Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
    Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.


    Original     		AN1035 p-7065. AN1023, gunn diode ghz s-parameter impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO PDF

    transistor A562

    Abstract: A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2011. INCH-POUND MIL-PRF-19500P 20 October 2010 SUPERSEDING MIL-PRF-19500N 30 November 2005 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICES,


    Original     		MIL-PRF-19500P MIL-PRF-19500N transistor A562 A561 transistor trapatt diode A4 transistor A562 transistor transistor a561 transistor smd marking a73 reverse-conducting thyristor trapatt A5 DIODE PDF

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


    Original     		3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz" PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 PDF

    digital multimeter DT 832

    Abstract: ic str 6454 equivalent
    Text: CHAUVIN ARNOUX 10 SUBSIDIARIES WORLDWIDE Chauvin Arnoux Ges.m.b.H Slamastrasse 29/2/4 1230 WIEN Tel.: +43 1 61 61 9 61 Fax: +43 1 61 61 9 61-61 vie-office@chauvin-arnoux.at www.chauvin-arnoux.at CHINA ENERDIS 16, rue Georges Besse - Silic 44 92182 ANTONY Cedex


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