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    GTT2622

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2622 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID 50V 1.8 520mA Description The GTT2622 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.


    Original     		GTT2622 520mA GTT2622 PDF