GT1482
Abstract: NCL capacitor GT1635 GT1812 GT1635 norfolk capacitors g-t1636 NCL capacitor GT1807 GT1636 GT1508
Text: Norfolk Capacitors Limited GTO Snubbers Thyristor Snubbers IGCT Protection DC Filters IGBT Filters IGBT - AC Harmonic Filters Energy Discharge Capacitors Section Start Previous Page GTO Protection Capacitors ~ tables Next Page 1800V - 2000V - 2500V - 2600V - 3300V - 3600V - 4000V - 4500V - 6000V - 7200V
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GT1480
GT1481
GT1809
GT1482
GT1810
GT1811
GT1812
GT1813
GT1814
GT1815
GT1482
NCL capacitor GT1635
GT1812
GT1635
norfolk capacitors
g-t1636
NCL capacitor
GT1807
GT1636
GT1508
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power IGBT MOSFET transistor GTO SCR di
Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
Text: New High Power Semiconductors: High Voltage IGBTs and GCTs Eric R. Motto*, M. Yamamoto* * Powerex Inc., Youngwood, Pennsylvania, USA * Mitsubishi Electric, Power Device Division, Fukuoka, Japan Abstract: Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power
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fairchild Igbts
Abstract: PCG3N60C3W
Text: PCG3N60C3W PRELIMINARY 6A, 600V, UFS Series N-Channel IGBTs January 2002 Features Symbol C • 6A, 600V at TC = 25oC • 600V Switching SOA Capability G Formerly developmental type TA49113. E Electrical Specifications TC = 25oC, Unless Otherwise Specified
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PCG3N60C3W
TA49113.
IC110,
fairchild Igbts
PCG3N60C3W
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Untitled
Abstract: No abstract text available
Text: PCG3N60C3W PRELIMINARY 6A, 600V, UFS Series N-Channel IGBTs December 1997 Features Symbol C • 6A, 600V at TC = 25oC • 600V Switching SOA Capability G Formerly developmental type TA49113. E Electrical Specifications TC = 25oC, Unless Otherwise Specified
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PCG3N60C3W
TA49113.
IC110,
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Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
Tag 225-600
IGBT cross-reference
SCR GTO
fast diode 3000V
tag 200-600
522.500. 5 x 20 mm
HVDC plus
scr phase control battery charger
esm 30 450 v
GTO thyristor Application notes
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DCR2950W
Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
igbt types 6000v
igbt sinewave inverter
thyristor phase control 600v to 1600v
DCR2630Y
Tag 225-600
PT85QWX45
HVDC plus
bi-directional switches IGBT
GTO hvdc thyristor
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DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
K1457
Tag 225-600
dim1200fss12
thyratron
IGBT cross-reference
DCR890F
DSF110
igbt types 6000v
DIM800DCS12-A
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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SSS7N60B
Abstract: SSS7N60B equivalent SSP7N60B 28A-600
Text: SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSP7N60B/SSS7N60B
O-220F
SSS7N60B
SSS7N60B equivalent
SSP7N60B
28A-600
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FFPF10UP60S
Abstract: No abstract text available
Text: FFPF10UP60S Features • Ultrafast with soft recovery @ IF = 1A , < 40ns • Reverse Voltage, 600V • Forward Voltage (@ TC = 60°C), < 2V • Enhanced Avalanche Energy TO-220F-2L Applications • • • • 1 2 General purpose Switching mode power supply
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FFPF10UP60S
O-220F-2L
FFPF10UP60S
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Untitled
Abstract: No abstract text available
Text: FFP04H60S tm Features 4A, 600V Hyperfast 2 Rectifier • High Speed Switching, rrt < 45ns @ IF = 4A The FFP04H60S is a hyperfast 2 rectifier and silicon nitride passivated ion-implanted epitaxial planar construction. • High Reverse Voltage and High Reliability
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FFP04H60S
FFP04H60S
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Abstract: No abstract text available
Text: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP3060
RHRP3060
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Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60S
FFP08S60S
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RURG3040CC
Abstract: RURG3060CC
Text: RURG3040CC, RURG3060CC Data Sheet Title UR 040 , RG 60C bt A, 0V 0V rafa Dual odes utho rpoon, minctor, ache ergy ted, itch wer pes, wer itch File Number 3549.3 30A, 400V - 600V Ultrafast Dual Diodes Features RURG3040CC and RURG3060CC are ultrafast dual diodes
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RURG3040CC,
RURG3060CC
RURG3040CC
RURG3060CC
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FFPF04S60S
Abstract: FFPF04S60STU
Text: STEALTH II Rectifier FFPF04S60S tm Features 4A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 4A The FFPF04S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF04S60S
FFPF04S60S
FFPF04S60STU
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TO-218AC Package
Abstract: MUR3040PT MUR3060PT RURH1540C RURH1540CC RURH1560C RURH1560CC
Text: MUR3040PT, RURH1540CC, MUR3060PT, RURH1560CC Data Sheet January 2000 File Number 2774.4 15A, 400V - 600V Ultrafast Dual Diodes Features MUR3040PT, RURH1540CC, MUR3060PT, and RURH1560CC are ultrafast dual diodes trr < 55ns with soft recovery characteristics. They have a low forward
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MUR3040PT,
RURH1540CC,
MUR3060PT,
RURH1560CC
RURH1560CC
TO-218AC Package
MUR3040PT
MUR3060PT
RURH1540C
RURH1540CC
RURH1560C
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Untitled
Abstract: No abstract text available
Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60SN
FFP08S60SN
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Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 35ns @ IF = 15A • High Reverse Voltage and High Reliability The FFP15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP15S60S
FFP15S60S
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Untitled
Abstract: No abstract text available
Text: FFP08H60S Hyperfast 2 Rectifier tm Features 8A, 600V Hyperfast 2 Rectifier • High Speed Switching rrt =45ns(Max. @ IF=8A ) • High Reverse Voltage and High Reliability • Avalanche Energy Rated The FFP08H60S is hyperfast2 rectifier (trr=45ns(Max.) @
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FFP08H60S
FFP08H60S
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RURU10060
Abstract: No abstract text available
Text: RURU10060 Data Sheet January 2000 File Number 3546.3 100A, 600V Ultrafast Diode Features The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURU10060
RURU10060
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Untitled
Abstract: No abstract text available
Text: INTRODUCTION Toshiba is one of the world leader in high power semiconductors, today. Since 1972, we have been making great efforts on developing and producing high power GTOs. The first production type of high power GTO was 600V/200A. Since then, the ratings and characteristics of GTO, such as switching perform
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00V/200A.
00-4000A
300-6000V
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GTO catalogue
Abstract: SG1000EX23 toshiba gto
Text: 3. METHOD OF USE 3.1 METHOD OF USE FOR GTO 3.1.1 G a te Triggering Characteristics Supplying a gate cu rren t to such th y risto rs as GTO, etc., switches them from the off-state to the on-state. T h y ris to r gate characteristics include gate trigger voltage, gate trigger current, gate non-trigger voltage,
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1000EX23
GTO catalogue
SG1000EX23
toshiba gto
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Igbt wafer
Abstract: dynex 600V 100A THYRISTORS IGBT 6500v
Text: introduction Dynex Semiconductor in Lincoln has 40 years experience in power electronics rectifier diodes, fast turn-off thyristors, GTO thyristors and custom heatsink power assemblies. Dynex Semiconductor is one of the foremost suppliers of pow er se m ic o n d u c to r
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USD1120
Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702
Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >*, mmm \ . i*SA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A
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DO-41
O-220AC
O-247
USD820
1N5817
1N5818
USD1120
USD1130
USD620
USD720
USD1120
USD1130
L5a 12v 30a
unitrode 1n5806
USD1120 UNITRODE
150A 100V gto
UT347
USD1140
T0447
SES5702
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