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    GT40T102

    Abstract: No abstract text available
    Text: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)


    Original     		PDF GT40T102 2-21F2C GT40T102

    Untitled

    Abstract: No abstract text available
    Text: GT40T102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T102 Parallel Resonance Inverter Switching Applications Unit: mm • Enhancement-mode • High speed: tf = 0.25 µs typ. (@IC = 40 A) • Low saturation voltage: VCE (sat) = 3.7 V (typ.) (@IC = 40 A)


    Original     		PDF GT40T102 2-21F2C

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn