GT40Q322
Abstract: No abstract text available
Text: GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT GT40Q322 Preliminary Voltage Resonance Inverter Switching Application • Enhancement-mode • High speed : tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector
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GT40Q322
GT40Q322
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gt40q322
Abstract: No abstract text available
Text: GT40Q322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q322 Voltage Resonance Inverter Switching Application • Enhancement-mode • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector • The 4th generation
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GT40Q322
10oducts
gt40q322
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GT40Q322
Abstract: No abstract text available
Text: GT40Q322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q322 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed: tf = 0.14 µs typ. (IC = 40A) • FRD included between emitter and collector
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GT40Q322
GT40Q322
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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GT30F124
Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010F
GT30F124
GT30J124
GT30F123
gt30g124
GT45F122
*45F122
GT30F124 Equivalent
*30g122
gt30g122
gt30f122
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GT30J124
Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
Text: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。
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BCJ0010G
BCJ0010F
GT30J124
GT45F122
GT30F123
GT30F124
gt30f122
IGBT GT30F124
gt30g122
gt30g124
GT45G122
GT30F125
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