Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GT30J341 Search Results

    SF Impression Pixel

    GT30J341 Price and Stock

    Toshiba America Electronic Components GT30J341,Q

    IGBT 600V 59A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT30J341,Q Tray 103 1
    • 1 $4.64
    • 10 $3.079
    • 100 $2.2192
    • 1000 $2.2192
    • 10000 $2.2192
    		Buy Now
    Avnet Americas GT30J341,Q Tray 100
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Mouser Electronics GT30J341,Q 104
    • 1 $4.04
    • 10 $2.85
    • 100 $2.07
    • 1000 $1.58
    • 10000 $1.55
    		Buy Now

    Toshiba America Electronic Components GT30J341,STA1E(S

    Trans IGBT Chip N-CH 600V 59A 230W 3-Pin(3+Tab) TO-3PN Magazine
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical GT30J341,STA1E(S 15 6
    • 1 -
    • 10 $4.425
    • 100 $4.425
    • 1000 $4.425
    • 10000 $4.425
    		Buy Now
    Chip1Stop GT30J341,STA1E(S Tray 15
    • 1 $4.18
    • 10 $3.54
    • 100 $3.54
    • 1000 $3.54
    • 10000 $3.54
    		Buy Now

    Toshiba America Electronic Components GT30J341,Q(O

    IGBT discrete
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop GT30J341,Q(O 160
    • 1 -
    • 10 $10.7
    • 100 $8.5
    • 1000 $8.5
    • 10000 $8.5
    		Buy Now

    GT30J341 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT30J341 Toshiba Transistors Original PDF
    GT30J341 Toshiba Japanese - Transistors Original PDF
    GT30J341 Toshiba GT30J341 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF

    GT30J341 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GT30J341 ディスクリートIGBT シリコンNチャネルIGBT GT30J341 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 30 A) (3) 接合温度が高い: Tj = 175 (最大) (4)


    Original     		PDF GT30J341

    Untitled

    Abstract: No abstract text available
    Text: GT30J341 Discrete IGBTs Silicon N-Channel IGBT GT30J341 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 30 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector


    Original     		PDF GT30J341

    GT30J341

    Abstract: No abstract text available
    Text: GT30J341 Discrete IGBTs Silicon N-Channel IGBT GT30J341 1. Applications • Motor Drivers 2. Features 1 Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 30 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector


    Original     		PDF GT30J341 GT30J341

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


    Original     		PDF SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH

    gt50jr22

    Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
    Text: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various


    Original     		PDF SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W