MAX757
Abstract: AN1177 APP1177 DCS1800
Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: Power-Boost Circuit Powers Cellular Handset Apr 01, 1996 APPLICATION NOTE 1177 Power-Boost Circuit Powers Cellular Handset Powering the RF power amplifier in a European GSM or DCS1800 cellular-telephone handset presents some
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com/an1177
MAX757:
AN1177,
APP1177,
Appnote1177,
MAX757
AN1177
APP1177
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MAX1727
Abstract: MAX1727EUG
Text: 19-1489; Rev 0; 12/00 GSM Cellular/PCN Handset RF Power Management IC The MAX1727 is a radio frequency RF power-management IC intended for Global Satellite Mobile (GSM) communication cellular and personal cellular network (PCN) handsets using a single lithium-ion (Li+) cell battery with inputs from +3.1V to +5.5V. The IC contains
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MAX1727
Abstract: No abstract text available
Text: 19-1489; Rev 0; 12/00 GSM Cellular/PCN Handset RF Power Management IC The MAX1727 is a radio frequency RF power-management IC intended for Global Satellite Mobile (GSM) communication cellular and personal cellular network (PCN) handsets using a single lithium-ion (Li+) cell battery with inputs from +3.1V to +5.5V. The IC contains
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MAX1727
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GaAs MESFET amplifier with high input impedance
Abstract: mesfet datasheet by motorola DCS1800 GSM900 MMM5062 PCS1900
Text: Fact Sheet Freescale Semiconductor, Inc. MMM5062 QUAD-BAND, SINGLE POWER SUPPLY, POWER AMPLIFIER MODULE Freescale Semiconductor, Inc. For GSM/GPRS Handsets The MMM5062 is a Quad-Band, Single Power Supply, Power Amplifier Module for use in GSM/GPRS cellular
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MMM5062
MMM5062
50-ohm
GSM850ed
MMM5062FACT/D
GaAs MESFET amplifier with high input impedance
mesfet datasheet by motorola
DCS1800
GSM900
PCS1900
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RF5110
Abstract: RF5111 GSM900
Text: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS
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RF5110
RF5110
800MHz
950MHz
203mm
330mm
025mm
RF5111
GSM900
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9024m
Abstract: No abstract text available
Text: AWT0904S6 A TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0904 is a 3 stage monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES Single Supply High Output Power
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AWT0904
AWT0904S6
SSOP-28
9024m
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RF2173
Abstract: No abstract text available
Text: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS
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RF2173
800MHz
950MHz
203mm
330mm
025mm
RF2173)
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RF5111
Abstract: GSM900 RF5110 SiGe BiCMOS transistor bias block generator shunt PFC915
Text: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS
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RF5110
RF5110
800MHz
950MHz
203mm
330mm
025mm
RF5111
GSM900
SiGe BiCMOS transistor bias block generator shunt
PFC915
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RF2173
Abstract: IPC-SM-782 RF2174 030514
Text: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS
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RF2173
800MHz
950MHz
203mm
330mm
025mm
RF2173)
IPC-SM-782
RF2174
030514
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Untitled
Abstract: No abstract text available
Text: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual
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ITT2110AH
ITT2111AH
ITT2112AH
ITT211X
ITT2112AH
ITT2110AH,
ITT2111A240
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ITT2110AH
Abstract: ITT2111AH ITT2112AH ITT211X ITTT2112AH
Text: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual
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ITT2110AH
ITT2111AH
ITT2112AH
ITT211X
ITT2112AH
ITT2110AH,
ITT2111AH)
ITTT2112AH
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Untitled
Abstract: No abstract text available
Text: RF2138 2 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Portable Battery Powered Equipment • 3V Dual-Band/Triple-Band Handsets • GPRS Compatible 2 POWER AMPLIFIERS • Commercial and Consumer Systems Product Description The RF2138 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS
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RF2138
800MHz
950MHz
36dBm.
36dBm,
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RF2123
Abstract: No abstract text available
Text: RF2123 MICRO-DEVICES GSM POWER AMPLIFIER Typical Applications • 4.8V GSM Cellular Handsets Commercial and Consumer Systems • 6V GSM Cellular Handsets Portable Battery Powered Equipment Product Description The RF2123 is a high power, high efficiency am plifier IC.
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RF2123
RF2123
0D00420
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U244
Abstract: 800MHz gsm Handset Circuit Diagram block diagram for automatic room power control RF2123 schematic diagram 48v dc charger automatic room power control applications LA 7625 schematic diagram 50 VDC POWER SUPPLY 6v battery charger circuit diagram schematic diagram 48v charger
Text: RFI RF2123 MICRO-DEVICES GSM POWER AMPLIFIER T yp ica l A p plicatio ns • 4.8V GSM Cellular Handsets Commercial and Consumer Systems • 6V GSM Cellular Handsets Portable Battery Powered Equipment < cc Product Description .158 .150 The RF2123 is a high power, high efficiency amplifier IC.
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RF2123
RF2123
800MHz
950MHz
T004131
100pF
U244
800MHz gsm Handset Circuit Diagram
block diagram for automatic room power control
schematic diagram 48v dc charger
automatic room power control applications
LA 7625
schematic diagram 50 VDC POWER SUPPLY
6v battery charger circuit diagram
schematic diagram 48v charger
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power
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AWT0908
AWT0908X
AWT0908
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power
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AWT0908
AWT0908X
T0908
80MIL
330MIL
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply High Output Power
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AWT0904
AWT0904
100nF
470pF
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Untitled
Abstract: No abstract text available
Text: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The A W T0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply
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AWT0904
T0904
AWT0904
100nF
470pF
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gsm block diagram
Abstract: No abstract text available
Text: E Your bobogo * GaAs IC Source AWT936 3.6 V GSM PA Advanced Product Information Rev 0 800 MHz Band GSM 3.6 V GaAs MMIC Power Amplifier Description: n n r H '“i - The AW T936 is a 3.6-Volt monolithic Power Amplifier suited for GSM cellular telephone applications.
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AWT936
AWT936
gsm block diagram
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N 8J5
Abstract: No abstract text available
Text: E nw igig @ AWT0908 S6 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0908 is a 3 stage monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES • High Output Power
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AWT0908
SSOP-28
N 8J5
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AWT0908
Abstract: AWT0908S6 SSOP-28
Text: AWT0908 S6 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0908 is a 3 stage monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES • High Output Power • High Efficiency
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AWT0908
SSOP-28
AWT0908S6
SSOP-28
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awt0904
Abstract: No abstract text available
Text: E Data Sheet nwigiçs AWT0904X TX POWER MMIC Your GnAs IC Source Advanced Product Information Rev 5 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0904X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES
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AWT0904X
AWT0904
100nF
470pF
awt0904,
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Untitled
Abstract: No abstract text available
Text: Emtoigcs Your GaAs IC Source Data Sheet AWT0904X TX POWER MMIC Advanced Product Information Rev 4 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0904X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications fl ñññfi
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AWT0904X
AWT0904X
AWT0904
100nF
470pF
awt0904,
0Q003L
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Untitled
Abstract: No abstract text available
Text: 3.5V 3.3W RF Power Amplifier 1C for GSM ITT2110AH / ITT2111 AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual
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ITT2110AH
ITT2111AH
ITT2112AH
ITT211X
ITT2112AH
ITT2110AH,
ITT2111
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