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    GS SOT23 Search Results

    GS SOT23 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ADR391BUJZ-REEL7 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    ADR391AUJZ-R2 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    ADR391AUJZ-REEL7 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    AD8005ARTZ-REEL7 Analog Devices SOT23 180MHz,400uA Current Fee Visit Analog Devices Buy

    GS SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AO3400A 30V N-Channel MOSFET SOT23 Product summary VDS ID Top View Bottom View 30V at VGS =10V 5.7A R DS(ON)(at V GS =10V) R DS(ON)(at V GS = 4.5V) < 26.5mΩ < 32mΩ R DS(ON)(at V GS = 2.5V) < 48mΩ General Descrlptlon D The AO3400A combines advanced trench MOSFET


    Original     		PDF AO3400A AO3400A KSM3400A

    Untitled

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type N-Channel Enhancement Mode MOSFET KI2306 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features ● RDS ON =0.030Ω@V GS =10V 1 0.55 ● RDS(ON) =0.052Ω@V GS =2.5V +0.2 1.6 -0.1 +0.2 2.8-0.2 ● RDS(ON) =0.035Ω@V GS =4.5V 0.4 3 2


    Original     		PDF KI2306 OT-23-3 300us,

    Untitled

    Abstract: No abstract text available
    Text: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23


    Original     		PDF BSS215P PG-SOT23 IEC61249-2-21 H6327:

    bsr802

    Abstract: BSR802N GPS09473 HLG09474 L6327
    Text: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23


    Original     		PDF BSR802N PG-SC59 L6327 bsr802 BSR802N GPS09473 HLG09474 L6327

    DIODE D38 06

    Abstract: MARKING LAS
    Text: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 3.8 ID A • Avalanche rated • Footprint compatible to SOT23


    Original     		PDF BSR202N PG-SC-59 PG-SC-59 L6327 DIODE D38 06 MARKING LAS

    DIODE D29 -08

    Abstract: No abstract text available
    Text: Product specification BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23


    Original     		PDF BSR302N PG-SC-59 L6327 DIODE D29 -08

    DIODE D38 -06

    Abstract: BSR202N GPS09473 HLG09474 L6327 gs 106
    Text: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23


    Original     		PDF BSR202N PG-SC-59 L6327 DIODE D38 -06 BSR202N GPS09473 HLG09474 L6327 gs 106

    PG-SOT23

    Abstract: BSS316N JESD22-A114 L6327
    Text: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original     		PDF BSS316N PG-SOT23 L6327: PG-SOT23 BSS316N JESD22-A114 L6327

    sot23 MARKING 72s

    Abstract: 2n7002 MARKING 2N7002 di 2N7002 MARKING 72S marking SOT23 V 4 diode 2N7002 JESD22 JESD22-A114 L6327 PG-SOT23
    Text: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features V DS 60 V V GS=10 V 3 Ω V GS=4.5 V 4 • N-channel R DS on ,max • Enhancement mode • Logic level ID • Avalanche rated 0.3 • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant


    Original     		PDF 2N7002 PG-SOT23 L6327: sot23 MARKING 72s 2n7002 MARKING 2N7002 di 2N7002 MARKING 72S marking SOT23 V 4 diode 2N7002 JESD22 JESD22-A114 L6327 PG-SOT23

    BSS306N

    Abstract: SWs SOT23
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original     		PDF BSS306N PG-SOT23 L6327: BSS306N SWs SOT23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features V DS 60 V V GS=10 V 3 Ω V GS=4.5 V 4 • N-channel R DS on ,max • Enhancement mode • Logic level ID • Avalanche rated 0.3 • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant


    Original     		PDF 2N7002 PG-SOT23 2N7002 L6327:

    BSS316N

    Abstract: L6327 PG-SOT23
    Text: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original     		PDF BSS316N PG-SOT23 L6327: BSS316N L6327 PG-SOT23

    BSR802N

    Abstract: GPS09473 HLG09474 L6327
    Text: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23


    Original     		PDF BSR802N PG-SC59 L6327 BSR802N GPS09473 HLG09474 L6327

    BSR202N

    Abstract: GPS09473 HLG09474 L6327 DIODE D38 -06 DIODE D38 06
    Text: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23


    Original     		PDF BSR202N PG-SC-59 L6327 BSR202N GPS09473 HLG09474 L6327 DIODE D38 -06 DIODE D38 06

    BSS306N

    Abstract: JESD22-A114 L6327 PG-SOT23
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original     		PDF BSS306N PG-SOT23 L6327: BSS306N JESD22-A114 L6327 PG-SOT23

    marking SYs

    Abstract: No abstract text available
    Text: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original     		PDF BSS316N IEC61249-2-21 PG-SOT23 H6327: marking SYs

    BSS306N

    Abstract: L6327 PG-SOT23
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original     		PDF BSS306N PG-SOT23 L6327: BSS306N L6327 PG-SOT23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features 60 V V GS=10 V 3 Ω V GS=4.5 V 4 V DS • N-channel R DS on ,max • Enhancement mode • Logic level • Avalanche rated 0.3 ID • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant


    Original     		PDF 2N7002 PG-SOT23 IEC61249-2-21 2N7002 PG-SOT-23 H6327:

    Untitled

    Abstract: No abstract text available
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original     		PDF BSS306N PG-SOT23 IEC61249-2-21 H6327:

    Untitled

    Abstract: No abstract text available
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original     		PDF BSS306N IEC61249-2-21 PG-SOT23 H6327:

    BSR802N

    Abstract: GPS09473 HLG09474 L6327 diode DS10 D38A
    Text: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23


    Original     		PDF BSR802N PG-SC59 L6327 BSR802N GPS09473 HLG09474 L6327 diode DS10 D38A

    2222ll

    Abstract: 10LLS ST C 236 DIODE 0605T
    Text: — _ VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (Q ) V GS(th) (V) lD Min (A) VN1 OLE 5 @ V GS = 10 V 0.8 to 2.5 0.38 VN 10LLS 5 @ V GS = 10 V 0.8 to 2.5


    OCR Scan     		PDF VN10LE/LLS, VN0605T, VN0610LL, VN2222LL 10LLS 0605T 0610LL 2222LL S-58620-- 21-Jun-99 ST C 236 DIODE

    222ll

    Abstract: 10LLS
    Text: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number rDS(on) Max (Q) V (BR)DSS M in (V) VN10LLS 5 @ V GS = 1 0 V VN0605T 5 @ V Gs = 10 V 60 VN0610LL 5 @ V GS = 10 V VN2222LL 5 FEATURES @VGS = 10V VGS(th)(V)


    OCR Scan     		PDF VN10LLS, VN0605T, VN0610LL, VN2222LL VN10LLS VN0605T VN0610LL VN2222LL S-04279-- 16-Jul-01 222ll 10LLS

    Untitled

    Abstract: No abstract text available
    Text: SÌ2305DS VISHAY Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUM M ARY V ds (V) -8 r I d (A) DS(ON) (-2) 0.052 @ V GS = —4.5 V ± 3 .5 0.071 @ V GS = -2 .5 V ±3 0.108 @ V GS = —1.8 V ±2 TO-236 (SOT-23) :-£ÿ Top View S i2305D S (A5)*


    OCR Scan     		PDF 2305DS O-236 OT-23) i2305D S-56947-- ec-98