Untitled
Abstract: No abstract text available
Text: AO3400A 30V N-Channel MOSFET SOT23 Product summary VDS ID Top View Bottom View 30V at VGS =10V 5.7A R DS(ON)(at V GS =10V) R DS(ON)(at V GS = 4.5V) < 26.5mΩ < 32mΩ R DS(ON)(at V GS = 2.5V) < 48mΩ General Descrlptlon D The AO3400A combines advanced trench MOSFET
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AO3400A
AO3400A
KSM3400A
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2222ll
Abstract: 10LLS ST C 236 DIODE 0605T
Text: — _ VN10LE/LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (Q ) V GS(th) (V) lD Min (A) VN1 OLE 5 @ V GS = 10 V 0.8 to 2.5 0.38 VN 10LLS 5 @ V GS = 10 V 0.8 to 2.5
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OCR Scan
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VN10LE/LLS,
VN0605T,
VN0610LL,
VN2222LL
10LLS
0605T
0610LL
2222LL
S-58620--
21-Jun-99
ST C 236 DIODE
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PDF
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222ll
Abstract: 10LLS
Text: VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number rDS(on) Max (Q) V (BR)DSS M in (V) VN10LLS 5 @ V GS = 1 0 V VN0605T 5 @ V Gs = 10 V 60 VN0610LL 5 @ V GS = 10 V VN2222LL 5 FEATURES @VGS = 10V VGS(th)(V)
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OCR Scan
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VN10LLS,
VN0605T,
VN0610LL,
VN2222LL
VN10LLS
VN0605T
VN0610LL
VN2222LL
S-04279--
16-Jul-01
222ll
10LLS
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PDF
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Untitled
Abstract: No abstract text available
Text: IC MOSFET SMD Type N-Channel Enhancement Mode MOSFET KI2306 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features ● RDS ON =0.030Ω@V GS =10V 1 0.55 ● RDS(ON) =0.052Ω@V GS =2.5V +0.2 1.6 -0.1 +0.2 2.8-0.2 ● RDS(ON) =0.035Ω@V GS =4.5V 0.4 3 2
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KI2306
OT-23-3
300us,
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PDF
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Untitled
Abstract: No abstract text available
Text: SÌ2305DS VISHAY Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET New Product PRODUCT SUM M ARY V ds (V) -8 r I d (A) DS(ON) (-2) 0.052 @ V GS = —4.5 V ± 3 .5 0.071 @ V GS = -2 .5 V ±3 0.108 @ V GS = —1.8 V ±2 TO-236 (SOT-23) :-£ÿ Top View S i2305D S (A5)*
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OCR Scan
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2305DS
O-236
OT-23)
i2305D
S-56947--
ec-98
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23
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BSS215P
PG-SOT23
IEC61249-2-21
H6327:
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PDF
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bsr802
Abstract: BSR802N GPS09473 HLG09474 L6327
Text: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23
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BSR802N
PG-SC59
L6327
bsr802
BSR802N
GPS09473
HLG09474
L6327
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PDF
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DIODE D38 06
Abstract: MARKING LAS
Text: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 3.8 ID A • Avalanche rated • Footprint compatible to SOT23
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BSR202N
PG-SC-59
PG-SC-59
L6327
DIODE D38 06
MARKING LAS
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PDF
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DIODE D29 -08
Abstract: No abstract text available
Text: Product specification BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 3.7 ID A • Avalanche rated • Footprint compatible to SOT23
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BSR302N
PG-SC-59
L6327
DIODE D29 -08
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PDF
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DIODE D38 -06
Abstract: BSR202N GPS09473 HLG09474 L6327 gs 106
Text: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23
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Original
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BSR202N
PG-SC-59
L6327
DIODE D38 -06
BSR202N
GPS09473
HLG09474
L6327
gs 106
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PDF
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PG-SOT23
Abstract: BSS316N JESD22-A114 L6327
Text: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 ID 1.4 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23
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Original
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BSS316N
PG-SOT23
L6327:
PG-SOT23
BSS316N
JESD22-A114
L6327
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PDF
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sot23 MARKING 72s
Abstract: 2n7002 MARKING 2N7002 di 2N7002 MARKING 72S marking SOT23 V 4 diode 2N7002 JESD22 JESD22-A114 L6327 PG-SOT23
Text: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features V DS 60 V V GS=10 V 3 Ω V GS=4.5 V 4 • N-channel R DS on ,max • Enhancement mode • Logic level ID • Avalanche rated 0.3 • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant
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2N7002
PG-SOT23
L6327:
sot23 MARKING 72s
2n7002 MARKING
2N7002 di
2N7002 MARKING 72S
marking SOT23 V 4 diode
2N7002
JESD22
JESD22-A114
L6327
PG-SOT23
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PDF
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BSS306N
Abstract: SWs SOT23
Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23
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Original
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BSS306N
PG-SOT23
L6327:
BSS306N
SWs SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features V DS 60 V V GS=10 V 3 Ω V GS=4.5 V 4 • N-channel R DS on ,max • Enhancement mode • Logic level ID • Avalanche rated 0.3 • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant
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Original
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2N7002
PG-SOT23
2N7002
L6327:
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PDF
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BSR802N
Abstract: GPS09473 HLG09474 L6327
Text: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23
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BSR802N
PG-SC59
L6327
BSR802N
GPS09473
HLG09474
L6327
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PDF
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BSR202N
Abstract: GPS09473 HLG09474 L6327 DIODE D38 -06 DIODE D38 06
Text: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23
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Original
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BSR202N
PG-SC-59
L6327
BSR202N
GPS09473
HLG09474
L6327
DIODE D38 -06
DIODE D38 06
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PDF
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Untitled
Abstract: No abstract text available
Text: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23
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Original
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BSR202N
PG-SC-59
L6327
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PDF
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BSS306N
Abstract: JESD22-A114 L6327 PG-SOT23
Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23
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Original
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BSS306N
PG-SOT23
L6327:
BSS306N
JESD22-A114
L6327
PG-SOT23
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PDF
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marking SYs
Abstract: No abstract text available
Text: BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23
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Original
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BSS316N
IEC61249-2-21
PG-SOT23
H6327:
marking SYs
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PDF
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BSS306N
Abstract: L6327 PG-SOT23
Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23
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Original
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BSS306N
PG-SOT23
L6327:
BSS306N
L6327
PG-SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002 OptiMOS Small-Signal-Transistor Product Summary Features 60 V V GS=10 V 3 Ω V GS=4.5 V 4 V DS • N-channel R DS on ,max • Enhancement mode • Logic level • Avalanche rated 0.3 ID • fast switching A PG-SOT23 • Pb-free lead-plating; RoHS compliant
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Original
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2N7002
PG-SOT23
IEC61249-2-21
2N7002
PG-SOT-23
H6327:
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PDF
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Untitled
Abstract: No abstract text available
Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23
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Original
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BSS306N
PG-SOT23
IEC61249-2-21
H6327:
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PDF
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Untitled
Abstract: No abstract text available
Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23
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Original
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BSS306N
IEC61249-2-21
PG-SOT23
H6327:
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PDF
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BSR802N
Abstract: GPS09473 HLG09474 L6327 diode DS10 D38A
Text: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23
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Original
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BSR802N
PG-SC59
L6327
BSR802N
GPS09473
HLG09474
L6327
diode DS10
D38A
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PDF
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