GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: PD - 95510A IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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5510A
IRFR3518PbF
IRFU3518PbF
AN1001)
IRFR3518
IRFU3518
AN-994.
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IRFR3518
Abstract: AN1001 EIA-541 IRFR120 IRFU120 IRFU3518
Text: PD - 95510A IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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5510A
IRFR3518PbF
IRFU3518PbF
AN1001)
IRFR3518
IRFU3518
AN-994.
IRFR3518
AN1001
EIA-541
IRFR120
IRFU120
IRFU3518
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PDF
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IRFR3518
Abstract: AN1001 EIA-541 IRFR120 IRFU120 IRFU3518 IRFR3518PBF
Text: PD - 95510A IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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Original
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5510A
IRFR3518PbF
IRFU3518PbF
AN1001)
IRFR3518
IRFU3518
AN-994.
IRFR3518
AN1001
EIA-541
IRFR120
IRFU120
IRFU3518
IRFR3518PBF
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PDF
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EK 110
Abstract: 12v 30A regulator smps isolated 12v output AN-994 EIA-541 IRFR120 IRFR3704 IRFU120 IRFU3704 U120
Text: PD - 95034A IRFR3704PbF IRFU3704PbF SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use HEXFET Power MOSFET VDSS RDS on max ID 20V 9.5mΩ 75A High Frequency Buck Converters for
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5034A
IRFR3704PbF
IRFU3704PbF
IRFR3704
IRFU3704
EK 110
12v 30A regulator
smps isolated 12v output
AN-994
EIA-541
IRFR120
IRFR3704
IRFU120
IRFU3704
U120
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PDF
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marking code TR 355A
Abstract: AN-994 EIA-541 IRFR120 IRFR3704 IRFU120 IRFU3704 U120 power MOSFET IRF data 4.5v to 100v input regulator
Text: PD - 95034A IRFR3704PbF IRFU3704PbF SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use HEXFET Power MOSFET VDSS RDS on max ID 20V 9.5mΩ 75A High Frequency Buck Converters for
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5034A
IRFR3704PbF
IRFU3704PbF
IRFR3704
IRFU3704
EIA-481.
marking code TR 355A
AN-994
EIA-541
IRFR120
IRFR3704
IRFU120
IRFU3704
U120
power MOSFET IRF data
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD - 95510 IRFR3518PbF IRFU3518PbF Applications l High frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS RDS on max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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IRFR3518PbF
IRFU3518PbF
AN1001)
IRFR3518
IRFU3518
AN-994.
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30CTQ
Abstract: 30CTQ100G-1 30CTQ100GS 30CTQ80GS 40HF P460 SMD-220
Text: Bulletin PD-20835 11/05 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary
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PD-20835
30CTQ.
12-Mar-07
30CTQ
30CTQ100G-1
30CTQ100GS
30CTQ80GS
40HF
P460
SMD-220
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Untitled
Abstract: No abstract text available
Text: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET General features Type VDSS RDS on RDS(on)*Qg PTOT STK800 30V <0.0029Ω 58.8nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances
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STK850
STK800
2002/95/EC
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STW30N20
Abstract: W30N20
Text: STP30N20 STW30N20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30N20 200V 0.075Ω 30A 125W STW30N20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■ 100% avalanche tested
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STP30N20
STW30N20
O-220/TO-247
O-247
O-220
STW30N20
W30N20
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Untitled
Abstract: No abstract text available
Text: STL60NH3LL N-CHANNEL 30V - 0.0065Ω - 30A - PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ Power MOSFET TARGET SPECIFICATION General Features Type VDSS RDS(on) ID STL60NH3LL 30V < 0.0085Ω 16A Note 2 • IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm Max)
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STL60NH3LL
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Untitled
Abstract: No abstract text available
Text: AP9976GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower Gate Charge Fast Switching Characteristic ID G 60V 21m 30A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP9976GP
O-220
O-220
9976GP
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PDF
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Untitled
Abstract: No abstract text available
Text: STL60NH3LL N-CHANNEL 30V - 0.0065Ω - 30A - PowerFLAT 6x5 ULTRA LOW GATE CHARGE STripFET™ Power MOSFET TARGET SPECIFICATION General Features Type VDSS RDS(on) ID STL60NH3LL 30V < 0.0085Ω 16A Note 2 • IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm Max)
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STL60NH3LL
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AP9976GP
Abstract: No abstract text available
Text: AP9976GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 60V RDS ON 21mΩ ID G 30A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP9976GP
O-220
O-220
9976GP
AP9976GP
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20835 rev. A 02/07 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary
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PD-20835
30CTQ.
O-262
O-220
O-262)
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PDF
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20835
Abstract: No abstract text available
Text: Preliminary Data Sheet PD-20835 09/04 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary
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Original
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PD-20835
30CTQ.
O-220
O-262
20835
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20835 11/05 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary
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PD-20835
30CTQ.
O-220
O-262
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92T03GH
Abstract: 92t03 AP92T03GH 92T0 marking codes transistors SSs AP92T03GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Text: AP92T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristics BVDSS 30V RDS ON 4mΩ ID G 75A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP92T03GH/J
O-252
AP92T03GJ)
O-251
O-251
92T03GJ
92T03GH
92t03
AP92T03GH
92T0
marking codes transistors SSs
AP92T03GJ
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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9468GH
Abstract: ap9468 AP9468GH GS Logo, Marking 30A marking codes transistors SSs AP9468GJ 9468 GS Logo Marking 30A Logo GS marking 30A
Text: AP9468GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 40V RDS ON 7mΩ ID G 75A S Description Advanced Power MOSFETs from APEC provide the
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AP9468GH/J
O-252
AP9468GJ)
O-251
O-251
9468GJ
9468GH
ap9468
AP9468GH
GS Logo, Marking 30A
marking codes transistors SSs
AP9468GJ
9468
GS Logo Marking 30A
Logo GS marking 30A
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Mosfet 40P03GH
Abstract: 40P03G
Text: AP40P03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -30V RDS ON 28mΩ ID G ▼ RoHS Compliant BVDSS -30A S Description
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AP40P03GH/J-HF
O-252
AP40P03GJ)
O-251
O-251
40P03GJ
Mosfet 40P03GH
40P03G
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40p03gj
Abstract: 40p03gh
Text: AP40P03GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance D BVDSS -30V RDS ON Simple Drive Requirement Fast Switching Characteristic 28m ID G -30A S Description G The TO-252 package is widely preferred for all commercial-industrial
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AP40P03GH/J
O-252
AP40P03GJ)
O-251
O-251
40P03GJ
40p03gj
40p03gh
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AN-994
Abstract: IRLZ34N IRLZ34NL IRLZ34NS
Text: PD - 95583 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET
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IRLZ34NS)
IRLZ34NL)
IRLZ34NSPbF
IRLZ34NLPbF
is957)
EIA-418.
AN-994
IRLZ34N
IRLZ34NL
IRLZ34NS
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20835 11/05 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary
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Original
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PD-20835
30CTQ.
08-Mar-07
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PDF
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Mosfet 40P03GH
Abstract: 40p03gj 40p03gh 40p03 40P03G AP40P03GJ AP40P03
Text: AP40P03GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -30V RDS ON 28mΩ ID G -30A S Description G The TO-252 package is widely preferred for all commercial-industrial
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AP40P03GH/J
O-252
AP40P03GJ)
O-251
O-251
40P03GJ
Mosfet 40P03GH
40p03gj
40p03gh
40p03
40P03G
AP40P03GJ
AP40P03
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