GS 9510 Search Results

GS 9510 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UPD78F9510GR-JJG-A		Renesas Electronics Corporation	Compact, Low-power, Low Pin-count 8-bit Microcontrollers for General Purpose Applications (Non Promotion), SSOP, /Embossed Tape
HS9-5104AEH-Q		Renesas Electronics Corporation	Radiation Hardened, Low Noise Quad Operational Amplifiers

GS 9510 Price and Stock

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Samtec Inc ZW-08-08-G-S-295-103 Board to Board & Mezzanine Connectors Flexible Board Stacking Header, 0.100" Pitch Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ZW-08-08-G-S-295-103		180			1 $1.47 10 $1.47 100 $0.92 1000 $0.61 10000 $0.32	Buy Now
Samtec Inc HW-13-13-G-S-795-107 Board to Board & Mezzanine Connectors High Temperature Flexible Board Stacking Header, 0.100" Pitch Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HW-13-13-G-S-795-107					1 $4.21 10 $4.21 100 $2.91 1000 $1.98 10000 $1.36	Get Quote
Samtec Inc ZW-06-08-G-S-295-103 Board to Board & Mezzanine Connectors Flexible Board Stacking Header, 0.100" Pitch Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ZW-06-08-G-S-295-103					1 $1.1 10 $1.1 100 $0.69 1000 $0.46 10000 $0.24	Get Quote
Samtec Inc ZW-08-09-G-S-395-105 Board to Board & Mezzanine Connectors Flexible Board Stacking Header, 0.100" Pitch Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ZW-08-09-G-S-395-105					1 $1.65 10 $1.65 100 $1.03 1000 $0.69 10000 $0.36	Get Quote
Samtec Inc ZW-10-08-G-S-295-103 Board to Board & Mezzanine Connectors Flexible Board Stacking Header, 0.100" Pitch Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ZW-10-08-G-S-295-103					1 $1.84 10 $1.84 100 $1.15 1000 $0.76 10000 $0.4	Get Quote

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GS 9510 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRF3710SPBF Abstract: AN-994 IRF3710 IRF3710L IRF3710LPBF IRF3710S Text: PD - 95108A IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A	Original	PDF	5108A IRF3710SPbF IRF3710LPbF EIA-418. IRF3710SPBF AN-994 IRF3710 IRF3710L IRF3710LPBF IRF3710S
Untitled Abstract: No abstract text available Text: PD - 95108A IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A	Original	PDF	5108A IRF3710SPbF IRF3710LPbF EIA-418.
IRF3710SPBF Abstract: AN-994 IRF3710 IRF3710L IRL3103L IRF3710LPBF IRF3710S Text: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A	Original	PDF	IRF3710SPbF IRF3710LPbF EIA-418. IRF3710SPBF AN-994 IRF3710 IRF3710L IRL3103L IRF3710LPBF IRF3710S
Untitled Abstract: No abstract text available Text: PD - 95100 IRF530NSPbF IRF530NLPbF Æ HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90m"	Original	PDF	IRF530NSPbF IRF530NLPbF EIA-418.
IRF3710SPBF Abstract: TP1100 IRF3710LPBF IRF3710S Text: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A	Original	PDF	IRF3710SPbF IRF3710LPbF of626) EIA-418. TP1100 IRF3710LPBF IRF3710S
IRF3710SPBF Abstract: IRF3710 IRF3710L AN-994 IRL3103L IRF3710LPBF IRF3710S Text: PD - 95108 IRF3710SPbF IRF3710LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A	Original	PDF	IRF3710SPbF IRF3710LPbF EIA-418. IRF3710SPBF IRF3710 IRF3710L AN-994 IRL3103L IRF3710LPBF IRF3710S
AN-994 Abstract: IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ	Original	PDF	IRF1010NSPbF IRF1010NLPbF EIA-418. AN-994 IRF1010N IRF1010NL IRL3103L 43a 504 pcb mounted
IRF530N applications Abstract: AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator Text: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ	Original	PDF	IRF530NSPbF IRF530NLPbF EIA-418. IRF530N applications AN-994 IRF530N IRF530NL IRL3103L 4.5v to 100v input regulator
AN-994 Abstract: IRF530N IRF530NL IRL3103L Text: PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 100V RDS on = 90mΩ	Original	PDF	IRF530NSPbF IRF530NLPbF EIA-418. AN-994 IRF530N IRF530NL IRL3103L
Untitled Abstract: No abstract text available Text: PD - 95103 l IRF1010NSPbF IRF1010NLPbF l HEXFETÆ Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description D VDSS = 55V RDS on = 11m!	Original	PDF	IRF1010NSPbF IRF1010NLPbF EIA-418.
marking code 43a Abstract: 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504 Text: PD - 95103 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010NSPbF IRF1010NLPbF l HEXFET Power MOSFET l D VDSS = 55V RDS on = 11mΩ	Original	PDF	IRF1010NSPbF IRF1010NLPbF EIA-418. marking code 43a 43A MARKING CODE AN-994 IRF1010N IRF1010NL IRL3103L 43a 504
2N6759 Abstract: JANTX 2n Text: POWER MOSFET TRANSISTORS , JTX JTXV» 400 Volt, 1.0 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching	OCR Scan	PDF	MIL-S-19500/542A 2N6759 2N6760 JANTX 2n
Untitled Abstract: No abstract text available Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET FEATURES PHP65N06LT, PHB65N06LT SYMBOL • ’Tr enc h’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics	OCR Scan	PDF	PHP65N06LT, PHB65N06LT T0220AB)
2N6761 Abstract: UNITRODE TRANSISTORS SA-A Text: POWER MOSFET TRANSISTORS AJTX JTXV 500 Volt, 1.5 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching	OCR Scan	PDF	MIL-S-19500/542A 2N6761 UNITRODE TRANSISTORS SA-A

2N6764 JANTX Abstract: 2N6763 2n6764 Text: POWER MOSFET TRANSISTORS , JTX JTXV¡¡Jgg 100 Volt, 0.055 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching	OCR Scan	PDF	MIL-S-19500/543A K1111. 2N6764 JANTX 2N6763 2n6764
ufnd123 Abstract: UFND120 Text: POWER MOSFET TRANSISTORS UFND120 100 Volt, 0.3 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled • No Second Breakdown • Excellent Temperature Stability DESCRIPTION	OCR Scan	PDF	UFND120 UFND123 ufnd123 UFND120
2N6758 Abstract: 6757 Text: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.	OCR Scan	PDF	2N6758 1L-S-19500/542A 2N6758 6757
2N6756 JAN Abstract: 2N6755 Text: POWER MOSFET TRANSISTORS , ,TX JTXVIñl?!! J, JTX, JTXV 2N6756 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.	OCR Scan	PDF	2N6756 MIL-S-19500/542A contro17) 2N6755 2N6756 JAN
Untitled Abstract: No abstract text available Text: POWER MOSFET TRANSISTORS 4 0 0 Volt, 1.8 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability UFN322 UFN323 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.	OCR Scan	PDF	UFN322 UFN323 UFN32Û UFN321 UFN322
2N6770 Abstract: No abstract text available Text: T2 UNITRODE CORP 9347963 UNITRODE 0G1D5E0 4 ï ~ CORP 92D 10520 POWER MOSFET TRANSISTORS 2N6769 J, JTX, JTXV 2N6770 500 Volt, 0.4 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability	OCR Scan	PDF	2N6769 2N6770 001D523 2N6770
2N6756 Abstract: 2N6755 Text: UNITRODE CORP TS 9347963 UNITRODE CORP '' P O W E R M O S F E Î DE § ^ 3 4 7 ^ 3 920 T R A N S I S T O R S 10492 00104^2 0 T , JTX, JTXV ¡ ¡ ¡ g * 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power M OSFET design utilizes the most advanced technology available.	OCR Scan	PDF	IL-S-19500/542A 2N6756 2N6755
Untitled Abstract: No abstract text available Text: UNITRO.DE corp 9347963 U N ïT r ÔDE CORP 92D 10500 D /-3 ?-// POWER MOSFET TRANSISTORS , JTX,JTXVg « 400 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability	OCR Scan	PDF	MIL-S-19500/542A
2N6767 Abstract: No abstract text available Text: POWERMOSFET- TRANSISTORS , JTX JTXV¡¡Jgg 400 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • • • • • • The U nitrode power MOSFET design u tilizes th e m ost advanced technology available. This e fficie n t design achieves a very low Rosiom and a high transconductance.	OCR Scan	PDF	supplie-1064 2N6767 2N6768
UFNZ40 Abstract: No abstract text available Text: UFNZ40 UFNZ42 POWER MOSFET TRANSISTORS 50 Volt, 0.028 Ohm N-Channel FEATURES DESCRIPTION • • • • C o m p a c t Plastic Package Fast S w itc h in g L o w D rive C urrent Ease o f Paralleling These lo w v o lta g e p o w e r M O S FETS have been designed fo r o p tim u m p e rfo rm a n c e in lo w	OCR Scan	PDF	UFNZ40 UFNZ42 UFNZ40,

GS 9510 Search Results

GS 9510 Result Highlights (2)

GS 9510 Price and Stock

Samtec Inc ZW-08-08-G-S-295-103

Samtec Inc HW-13-13-G-S-795-107

Samtec Inc ZW-06-08-G-S-295-103

Samtec Inc ZW-08-09-G-S-395-105

Samtec Inc ZW-10-08-G-S-295-103

GS 9510 Datasheets Context Search

IRF3710SPBF

Untitled

IRF3710SPBF

Untitled

IRF3710SPBF

IRF3710SPBF

AN-994

IRF530N applications

AN-994

Untitled

marking code 43a

2N6759

Untitled

2N6761

2N6764 JANTX

ufnd123

2N6758

2N6756 JAN

Untitled

2N6770

2N6756

Untitled

2N6767

UFNZ40