D-73277
Abstract: gs 05 24 gd 2 gs 05 LEUZE electrical electronic guide GS05 2.4 g gs 05 24 gd 1 free transistor light sensors
Text: Leuze electronic GS 05 Forked photoelectric sensors Dimensioned drawing 2mm 5mm 10 - 30 V DC l Fast amplifier with high switching frequency for detection of short events e.g. gaps between labels l Universal application due to short circuit and polarity reversal protected PNP and NPN
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C/-30
0100/T
D-73277
gs 05 24 gd 2
gs 05
LEUZE
electrical electronic guide
GS05
2.4 g
gs 05 24 gd 1
free transistor
light sensors
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Untitled
Abstract: No abstract text available
Text: PD - 96013 IRF7832ZPbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS
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IRF7832ZPbF
EIA-481
EIA-541.
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Untitled
Abstract: No abstract text available
Text: PD - 96975 IRF7832Z HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters VDSS 3.8m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance
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IRF7832Z
EIA-481
EIA-541.
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EIA-541
Abstract: IRF7501 diode code yw
Text: PD - 95345 IRF7501PbF HEXFET Power MOSFET l l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6
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IRF7501PbF
EIA-481
EIA-541.
EIA-541
IRF7501
diode code yw
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irf9321
Abstract: IRF9321PBF IRF9321TRPBF
Text: PD - 95960 IRF9321PbF HEXFET Power MOSFET VDS -30 RDS on max V 7.2 mΩ 11.2 mΩ Qg (typical) 34 nC ID -15 A (@VGS = -10V) RDS(on) max (@VGS = -4.5V) (@TA = 25°C) 6 ' 6 ' 6 ' * ' SO-8 Applications • Charge and Discharge Switch for Notebook PC Battery Application
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IRF9321PbF
IRF9321TRPbF
JESD47F
J-STD-020D)
irf9321
IRF9321PBF
IRF9321TRPBF
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IRHNJ63234
Abstract: IRHNJ67234 PD-97197
Text: PD-97197 RADIATION HARDENED POWER MOSFET SURFACE-MOUNT SMD-0.5 IRHNJ67234 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHNJ67234 IRHNJ63234 Radiation Level RDS(on) ID 100K Rads (Si) 0.21Ω 12.4A 300K Rads (Si) 0.21Ω 12.4A SMD-0.5 International Rectifier’s R6TM technology provides
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PD-97197
IRHNJ67234
IRHNJ63234
90MeV/
MIL-STD-750,
MlL-STD-750,
IRHNJ63234
IRHNJ67234
PD-97197
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IRHYS63234CM
Abstract: IRHYS67234CM
Text: PD-97193 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67234CM 100K Rads (Si) 0.22Ω ID 12A IRHYS63234CM 300K Rads (Si) 12A 0.22Ω International Rectifier’s R6 TM technology provides
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PD-97193
O-257AA)
IRHYS67234CM
IRHYS67234CM
IRHYS63234CM
90MeV/
5M-1994.
O-257AA.
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BSR802N
Abstract: GPS09473 HLG09474 L6327
Text: BSR802N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 23 mΩ V GS=1.8 V 32 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23
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BSR802N
PG-SC59
L6327
BSR802N
GPS09473
HLG09474
L6327
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BSR302N
Abstract: GPS09473 HLG09474 L6327 GS1660
Text: BSR302N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V) 30 V V GS=10 V 23 mΩ V GS=4.5 V 36 ID 3.7 A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated
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BSR302N
PG-SC-59
L6327
BSR302N
GPS09473
HLG09474
L6327
GS1660
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BSR202N
Abstract: GPS09473 HLG09474 L6327 DIODE D38 -06 DIODE D38 06
Text: BSR202N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 21 mΩ V GS=2.5 V 33 ID 3.8 A • Avalanche rated • Footprint compatible to SOT23
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BSR202N
PG-SC-59
L6327
BSR202N
GPS09473
HLG09474
L6327
DIODE D38 -06
DIODE D38 06
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AN-994
Abstract: IRL2703 IRL2703S
Text: PD - 9.1360 IRL2703S PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 0.04Ω G ID = 24A S Description
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IRL2703S
AN-994
IRL2703
IRL2703S
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Untitled
Abstract: No abstract text available
Text: S T U/D1255P L S amHop Microelectronics C orp. J an.03 2005 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable. 110 @ V G S = -10V
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U/D1255P
O-252
O-251
O-252AA
O-252
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AN-994
Abstract: IRL2703 IRL2703S
Text: PD - 9.1360 IRL2703S PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 0.04Ω G ID = 24A S Description
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IRL2703S
AN-994
IRL2703
IRL2703S
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bc 230
Abstract: SSC02SYAN
Text: Sullins Headers .100”[2.54mm] Contact Centers, Male Breakaway Header Dip Solder/Right Angle/SMT SPECIFICATIONS • • • • JUMPERS .100 [2.54] 3 amp current rating per contact UL Flammability Rating: 94V-O Insulator: Polyester, PA9T Contact Material: Copper Alloy
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STC02SYAN
SPC02SYAN
SSC02SYAN
bc 230
SSC02SYAN
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IRF6678
Abstract: IRF6678TR1
Text: PD - 96979B IRF6678 DirectFET Power MOSFET Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 30V max ±20V max 1.7mΩ@ 10V 2.3mΩ@ 4.5V Ultra Low Package Inductance Qg tot Qgd Qgs2
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96979B
IRF6678
IRF6678
IRF6678TR1
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gs 05 24 gd 2
Abstract: No abstract text available
Text: Tem ic SÌ9933DY Siliconix Dual P-Channel Enhancement-Mode MOSFET Product Summary VD S V -2 0 r DS(on) (£2) I d (A) 0 .1 1 @ V G S = - 4 .5 V ± 3 .4 0.15 @ V GS = - 3 . 0 V ± 2 .9 0.19 @ V GS = - 2 .7 V ± 2 .6 S2 o SO-8 [T jG [T ~T~1 D j s2 [jT 6 1 D2
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9933DY
P-35898--Rev.
gs 05 24 gd 2
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GY 123
Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
Text: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122
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GAZ14
GY 123
SY 170
gd 241 c
gd241c
funkamateur
sy 166
sy 164
VSF203
VSF200
SF 127
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Untitled
Abstract: No abstract text available
Text: T e m ic SMD15N06 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) 60 0.10 lDa (A) 15 D Q DPAK (T O -252) D •<-¿3 n°n G S Ô s Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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SMD15N06
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SUB60N06-08
Abstract: No abstract text available
Text: T e m ic SUB60N06-08 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (ß ) I d (A) 0.008 603 60 D p TO-263 ( 1 o jj u y DRAIN connected to TAB G D S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
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SUB60N06-08
O-263
SUB60N06-08
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SD215
Abstract: No abstract text available
Text: High-Speed Analog N-Channel DMOS FETs calcxrt CORPORATION \J S D 2 1 1 /S D 2 1 3 /S D 2 1 5 FEATURES DESCRIPTION High Input to Output Isolation . 120dB Low On R esistan ce. 30 Ohm
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120dB
SD211
1A443S2
SD211/SD213/SD215
600ft
443E2
SD211/
SD213/SD215
1A44352
SD215
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Untitled
Abstract: No abstract text available
Text: UN I V E R S A L S E M I C O N D U C T O R 4TE D • T3t.a3Ml 0 G D Q 1Q 7 22fi ■ UNIVERSAL UNV SD5000, SD5001, SD 5002 N-Channel Enhancement Mode Quad D-Mos FET Analog Switch A rrays O rd ering Inform ation D e s c rip tio n 20V, 500 1 0 V , sou 1 5 V , SOU
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SD5000,
SD5001,
16-Pm
SD5000N
SD5001N
SD5002N
S05000J
S05001J
SD5001CHP
SD5002CHP
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TEA-1035
Abstract: 2SK1292 Low Forward Voltage Diode MEI-1202
Text: DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1292 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1292 is N-channel MOS Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters solenoid, motor and lamp driver.
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2SK1292
2SK1292
IEI-1209)
TEA-1035
Low Forward Voltage Diode
MEI-1202
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iso 1207
Abstract: 2SK1292 MEI-1202 TEA-1035
Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC À MOS FIELD EFFECT POWER TRANSISTOR 2SK1292 SWITCHING N-CHANNEL POWER MOS FET
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2SK1292
2SK1292
IEI-1209)
iso 1207
MEI-1202
TEA-1035
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P3596
Abstract: s35d
Text: Temic Siliconix P-Channel Enhancement-Mode MOSFET SÌ9435DY Product Summary V d s V -3 0 rDS(on) (£2) 0.055 @ V GS = -1 0 V 0.07 @ VGS = - 6 V 0.105 @ VGS = -4 .5 V I d (A) ±5.1 ±4.6 ±3.6 S O -8 ~~6~~1 D rr LITTLE FOOT ZD D r t : g U T~1 D r [XI s [T
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9435DY
P-35963--Rev.
P3596
s35d
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