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Catalog Datasheet	MFG & Type	Document Tags	PDF
Granberg Abstract: No abstract text available Text: SOLID STATE AMPLIER DESIGN USING RF MOSFET DEVICES by S.K. Leong polyfet rf devices MTT 1999 June 17th Anaheim Selection of Proper Device • Output Power / Gain / Bandwidth / Efficiency / Linearity / COST • Package type – Single Ended / Push Pull – Surface mount or screw in metal flange	Original	250Watt Granberg	PDF
"BJT Transistors" Abstract: Granberg BFG425 Granberg dye BFG425W High IP3 Low-Noise Amplifier 24 TRANSISTOR MAKING transistor databook BJT C71P LINE FILTER FOR 900MHZ Text: LNA design for CDMA front end by Jarek Lucek Market Application Engineer and Robbin Damen, Development/Application Engineer. Philips Semiconductors Abstract: This article will step the reader through a practical design of a front end 900 MHz and 1.9 GHz CDMA Low Noise Amplifier. The main emphasis will be put on	Original		PDF
BFG425 Abstract: amplifier rf 18dbm gain 18db BFG425W BFG425 spice parameters High IP3 Low-Noise Amplifier Granberg BJT IC Vce BFG425 Power amplifier Text: DISCLAIMER: This article was published in RF Design in February 1999 and has been reprinted with permission of the publisher, Intertec. LNA design for CDMA front end by Jarek Lucek Market Application Engineer and Robbin Damen, Development/Application Engineer.	Original		PDF
Granberg Abstract: motorola LM335 ericsson rf AN1643 ericsson 3108 LM335 Granberg dye Ericsson Base Station MOTOROLA small signal transistors Text: Biasing LDMOS FETs for Linear Operation Bias choices determine linearity, gain and efficiency, but also require attention to thermal effects By Cindy Blair Ericsson RF Power Products he new CDMA and WCDMA wireless standards have dramatically impacted the optimization criteria that a wireless base	Original	AN1643. Granberg motorola LM335 ericsson rf AN1643 ericsson 3108 LM335 Granberg dye Ericsson Base Station MOTOROLA small signal transistors	PDF
Granberg Abstract: MAPM-030400-060C00 Granberg VSWR Protection MAPM-030400 AN4003 AD8361 AD8362 AN-20 MAPM Text: Application Note AN4003 Closed Loop Control Maximizes MAPM-030400-010C00 and MAPM-030400-060C00 Module Performance Rev. 1 I. Introduction The MAPM-030400-010C00 and MAPM-030400-060C00 RF amplifier modules work together to form the basic building block of a 30 MHz to 400 MHz amplifier that can supply over 60 W of output power. With the addition	Original	AN4003 MAPM-030400-010C00 MAPM-030400-060C00 Granberg Granberg VSWR Protection MAPM-030400 AN4003 AD8361 AD8362 AN-20 MAPM	PDF
This article Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left	Original	namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet	PDF