BSL215C
Abstract: HLG09283 L6327
Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)
|
Original
|
PDF
|
BSL215C
L6327:
BSL215C
HLG09283
L6327
|
TLE4966K
Abstract: TSOP6 AEA03645 HLG09283
Text: Data Sheet, Rev. 1.0, September 2007 TLE4966K High Precision Hall-Effect Switch with Direction Detection Sensors Edition 2007-09 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
|
Original
|
PDF
|
TLE4966K
GPX09300
HLG09283
TLE4966K
TSOP6
AEA03645
HLG09283
|
SMD MARKING d36
Abstract: BSL802SN HLG09283 JESD22-A114 L6327
Text: BSL802SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 22 mΩ V GS=1.8 V 31 ID 7.5 A • Avalanche rated • Qualified according to AEC Q101
|
Original
|
PDF
|
BSL802SN
L6327:
SMD MARKING d36
BSL802SN
HLG09283
JESD22-A114
L6327
|
BSL207N
Abstract: HLG09283 JESD22-A114 L6327
Text: BSL207N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 70 mΩ V GS=2.5 V 110 ID 2.1 A • Avalanche rated • Qualified according to AEC Q101
|
Original
|
PDF
|
BSL207N
L6327:
BSL207N
HLG09283
JESD22-A114
L6327
|
BCR450
Abstract: BC817SU BCX68 BCX68-25 LM6181 SC74
Text: D a t a s h e e t , R ev . 2 . 1 , S e p t e m b e r 2 00 7 LED controller IC BCR450 S m a l l S i g n a l D i s c r et e s Edition 2007-09-26 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2007. All Rights Reserved.
|
Original
|
PDF
|
BCR450
GPX09300
CPWG5899
BCR450
BC817SU
BCX68
BCX68-25
LM6181
SC74
|
BSL214N
Abstract: No abstract text available
Text: BSL214N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 140 mΩ V GS=2.5 V 250 ID 1.5 A • Avalanche rated • Qualified according to AEC Q101
|
Original
|
PDF
|
BSL214N
L6327:
BSL214N
|
Untitled
Abstract: No abstract text available
Text: BSL806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101
|
Original
|
PDF
|
BSL806N
L6327:
|
JESD22-C10-HBM
Abstract: A70 SMD
Text: BSL302SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 25 mΩ V GS=4.5 V 38 ID 7.1 A • Avalanche rated • dv /dt rated PG-TSOP-6 • Pb-free lead plating; RoHS compliant
|
Original
|
PDF
|
BSL302SN
L6327
JESD22-C10-HBM
A70 SMD
|
Untitled
Abstract: No abstract text available
Text: BSL306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated PG-TSOP6 • Qualified according to AEC Q101
|
Original
|
PDF
|
BSL306N
L6327:
|
BSL207N
Abstract: D-21A
Text: BSL207N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 70 mΩ V GS=2.5 V 110 ID 2.1 A • Avalanche rated • Qualified according to AEC Q101
|
Original
|
PDF
|
BSL207N
L6327:
150nces.
BSL207N
D-21A
|
bsl307sp
Abstract: No abstract text available
Text: BSL307SP Rev 1.5 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5
|
Original
|
PDF
|
BSL307SP
L6327:
3000pcs/r.
bsl307sp
|
marking 8d
Abstract: marking 8E 8d4f marking IBW 8D marking MARKING 3B
Text: 3B=*'/@6 # <?5" # & E $ & 9 -8 8& 53: -8'=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9I S G4? * 6;4AA8? ' 9I"^]#$\Pf S A;4A68@ 8AF@ B78 S & B: <6 ?8H8? / D4F87 %+ K ) =I / 0( \" ) =I / )+( $9 %*&( 6 S - CDBF86F87 F=%JIEF%. S + G4?<9<87 466BD7<A: FB +
|
Original
|
PDF
|
466BD
marking 8d
marking 8E
8d4f
marking IBW
8D marking
MARKING 3B
|
BSL215C
Abstract: HLG09283 L6327
Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)
|
Original
|
PDF
|
BSL215C
L6327:
BSL215C
HLG09283
L6327
|
Untitled
Abstract: No abstract text available
Text: BSL307SP Rev 1.6 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5
|
Original
|
PDF
|
BSL307SP
IEC61249Â
H6327:
3000pcs/r.
|
|
|
Untitled
Abstract: No abstract text available
Text: TLE4966-2K High Precision Hall Switch with two Outputs Datasheet Rev.1.0, 2010-06-28 Sense & Control Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
|
Original
|
PDF
|
TLE4966-2K
GPX09300
HLG09283
|
Untitled
Abstract: No abstract text available
Text: 3C= +? @Y\R>@Cb ':.99'64;.9(>.;?6?@<> %><1A0@'A:.>E 7NJ\]ZN[ ) ;J T H5@) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A9BGAC89 T.HD9E'C;=7@9I9@ 0E5G98 *( L ) >J 0 ),( ] ) >J 0 *-( $; )&- 7 TI5@5B7<9E5G98 T,H5@=:=98577CE8=B;GC ,
|
Original
|
PDF
|
E5G98
5B79A9BGà
E5G98
577CE8
|
BCR450
Abstract: AN105 infineon 50S INFINEON AECQ100 AN105 BC817SU BCX68 BCX68-25 SC74 asc74
Text: BCR450 LED Driver IC BCR450 Power LED Driver IC 1 BCR450 Power LED Driver IC Features • Low voltage drop across sense resistor, 0.15 V typical • High output current precision • Operating voltage fro 8 to 27 V • Over voltage protection • Overtemperature current foldback and Thermal shut down
|
Original
|
PDF
|
BCR450
BCR450
SC-74
AN105 infineon
50S INFINEON
AECQ100
AN105
BC817SU
BCX68
BCX68-25
SC74
asc74
|
55b7
Abstract: C89T marking BM marking A9
Text: 3B=* ,@ # <?5" # & E $ & 9 -88& 53: -8 '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ ;J T H5@ + 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 %+( L ) >J 0 )-( ]" ) >J 0 */( $; T ' C;=7 @9I9@ 0 E5G98 %)&- 7 T I5@5B7<9 E5G98 G>%KJFG%. T , H5@=:=98 577CE8=B; GC
|
Original
|
PDF
|
5B79A
577CE
55b7
C89T
marking BM
marking A9
|
CH 8i
Abstract: No abstract text available
Text: 3C=/'-? @Y\R>@Cb ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J U I6A) 8=6CC: A ' ;J"`_#$^Rh U C=6C8: B : CHB D9: U 0 AHF6 ' D<> 8 A: J: A 1 F6H: 9 *( M ) >J 1 -/ ^" ) >J 1 0* $; *&+ 7 U J6A6C8=: F6H: 9 U , I6A> ;> : 9 688DF9>
|
Original
|
PDF
|
|
AN105 infineon
Abstract: No abstract text available
Text: Datasheet, Rev. 3.1, Feb. 2013 LED Driver IC BCR450 Power Management and Multimarket Edition 2013-02-21 Published by Infineon Technologies AG, 81726 München, Germany Infineon Technologies AG 2013. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of
|
Original
|
PDF
|
BCR450
BCR450
GPX09300
CPWG5899
AN105 infineon
|
BSL315P
Abstract: JESD22-A114 L6327
Text: BSL315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode -30 V V GS=10 V 150 mΩ V GS=4.5 V 270 ID • Logic level (4.5V rated) -1.5 • Avalanche rated A PG-TSOP-6 • Qualified according to AEC Q101
|
Original
|
PDF
|
BSL315P
L6327:
BSL315P
JESD22-A114
L6327
|
BSL314PE
Abstract: JESD22-A114 L6327
Text: BSL314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-TSOP-6 • Qualified according AEC Q101
|
Original
|
PDF
|
BSL314PE
L6327:
BSL314PE
JESD22-A114
L6327
|
BSL308C
Abstract: HLG09283 L6327
Text: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features P N -30 30 V V GS=±10 V 80 57 mΩ V GS=±4.5 V 130 93 -2.0 2.3 • Complementary P + N channel · Enhancement mode V DS · Logic level 4.5V rated R DS(on),max · Avalanche rated
|
Original
|
PDF
|
BSL308C
L6327:
BSL308C
HLG09283
L6327
|
AEA03645
Abstract: PG-SSO-41 4966B AEA03255 AEP03646 HLG09283 TLE4966H TLE4966L
Text: Da ta Sh e et , V 1 .1 , Oct o be r 20 0 5 TLE4966H TLE4966L High Precision Hall-Effect Switch with Direction Detection Sen s ors Edition 2005-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.
|
Original
|
PDF
|
TLE4966H
TLE4966L
AEA03645
PG-SSO-41
4966B
AEA03255
AEP03646
HLG09283
TLE4966H
TLE4966L
|