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Catalog Datasheet	MFG & Type	PDF	Document Tags
Gan transistor Abstract: No abstract text available Text: polyfet rf devices GP2441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation	Original	PDF	GP2441 Gan transistor
GP2441 Abstract: No abstract text available Text: polyfet rf devices GP2441 General Description Polyfet's GAN on SiC HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation	Original	PDF	GP2441 1-3000Mhz GP2441
TB232 Abstract: No abstract text available Text: July 9, 2014 TB232 Rev.C Frequency=1100-2600MHz Pout=30W Gain=12dB Vds=48Vdc Idq=150mA Efficiency=40-45% GP2441 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 9, 2014 PH:(805)484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012	Original	PDF	TB232 1100-2600MHz 48Vdc 150mA GP2441 Avenida110
MGCF21 Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount	Original	PDF	L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet