transistor marking R57 ghz
Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
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2SC5754
2SC5754-T2
PU10008EJ02V0DS
transistor marking R57 ghz
TRANSISTOR R57
PU10008EJ02V0DS
2SC5434
2SC5509
2SC5753
2SC5754
2SC5754-T2
DCS1800
GSM1800
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BD443
Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power
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BLW77
BD443
MGP540
BD228
BLW77
MGP523
RF POWER TRANSISTOR NPN vhf
philips ceramic disc capacitors 1500 pf
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BD443
Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power
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BLW76
BD443
BLW76
BD228
philips polystyrene capacitor
MGP501
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Philips polystyrene capacitors
Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB
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BLW76
SC08a
Philips polystyrene capacitors
capacitor polyester philips
HF power amplifier
MGP502
push pull class AB RF linear
MGP501
Philips polystyrene capacitor
BLW76
class A push pull power amplifier
transistor w 04 59
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TRANSISTOR R57
Abstract: 2SC5754-T2 transistor marking R57 ghz 2SC5434 2SC5509 2SC5753 2SC5754 DCS1800 GSM1800 NE5520379A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PU10008EJ02V0DS
2SC5754
TRANSISTOR R57
2SC5754-T2
transistor marking R57 ghz
2SC5434
2SC5509
2SC5753
2SC5754
DCS1800
GSM1800
NE5520379A
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BLW85
Abstract: gp550 SOt123 Package TP200
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and
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BLW85
BLW85
gp550
SOt123 Package
TP200
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Untitled
Abstract: No abstract text available
Text: PreliminaryData Sheet PC3245TB SiGe BiCMOS Integrated Circuit Wideband Amplifier IC with 3-Step Gain Selection Function R09DS0027EJ0100 Rev.1.00 Sep 26, 2011 DESCRIPTION The μPC3245TB is a wideband amplifier IC mainly designed for SW Box and IF amplifier in DBS LNB application.
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PC3245TB
R09DS0027EJ0100
PC3245TB
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BY206
Abstract: blw86 4312 020 36640 HF power amplifier PHILIPS 4312 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f.
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BLW86
BY206
blw86
4312 020 36640
HF power amplifier
PHILIPS 4312 amplifier
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4312 020 36640
Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW86
SC08a
4312 020 36640
BLW86
HF power amplifier
ferroxcube wideband hf choke
PHILIPS 4312 amplifier
BY206
BY206 diode
SOt123 Package
22 pf trimmer capacitor datasheet
4 carbon wire resistor
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU590Q
BFU590Q
AEC-Q101
BFU590QX
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Abstract: No abstract text available
Text: 62 7 BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU590G
OT223
BFU590G
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU590Q
BFU590Q
AEC-Q101
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DRO lnb
Abstract: BFG424W
Text: BFG424W NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
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BFG424W
OT343R
MSC895
BFG424W
DRO lnb
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DRO lnb
Abstract: mbb159 BFG424F SOT343F
Text: BFG424F NPN 25 GHz wideband transistor Rev. 01 — 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFG424F
OT343F
MSC895
BFG424F
DRO lnb
mbb159
SOT343F
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NESG2101M16
Abstract: NESG2101M16-T3 NESG2101M16-T3-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
M8E0904E
NESG2101M16
NESG2101M16-T3
NESG2101M16-T3-A
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transistor gl 1117
Abstract: trimmer 3-30 pf BLW60C MSB056
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial
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BLW60C
transistor gl 1117
trimmer 3-30 pf
BLW60C
MSB056
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transistor gl 1117
Abstract: MGP485 Transistor gl 1117 B BLW60C IEC 320 C13 MSB056 MGP480
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW60C VHF power transistor Product specification File under Discrete Semiconductors, SC08a March 1993 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW60C
SC08a
transistor gl 1117
MGP485
Transistor gl 1117 B
BLW60C
IEC 320 C13
MSB056
MGP480
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Untitled
Abstract: No abstract text available
Text: BFU520XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU520XR is part of the BFU5 family of transistors, suitable for small signal to
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BFU520XR
OT143R
BFU520XR
AEC-Q101
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BFU590G
Abstract: No abstract text available
Text: 62 7 BFU580G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU580G
OT223
BFU580G
AEC-Q101
BFU590G
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Untitled
Abstract: No abstract text available
Text: BFU530XR NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package. The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to
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BFU530XR
OT143R
BFU530XR
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: Data Sheet PD5756T6N SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 DESCRIPTION The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV
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PD5756T6N
R09DS0026EJ0100
PD5756T6N
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Untitled
Abstract: No abstract text available
Text: Data Sheet PD5756T6N SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function R09DS0026EJ0100 Rev.1.00 Oct 04, 2011 DESCRIPTION The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV
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PD5756T6N
R09DS0026EJ0100
PD5756T6N
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
NESG2101M16
M8E0904E
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Untitled
Abstract: No abstract text available
Text: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
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C4382.
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