BZY97C
Abstract: bzy200 BZY10 BZY180 BZY120 BZY150 ZENER bzy18 BZY56 bzy100 bzy39
Text: BZY97C10 GP. BZY97C200 GP 1.5 W Zener Diodes Dimensions in mm. DO-41 Plastic Voltage 10 to 200 V Power 1.5 W 5± 0.2 58.5 ±0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C. 3. Max. soldering time, 3.5 sec.
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BZY97C10
BZY97C200
DO-41
BZY68
BZY82
BZY100
BZY120
BZY150
BZY180
BZY200
BZY97C
BZY10
ZENER bzy18
BZY56
bzy39
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ZENER bzy18
Abstract: bzy15 bzy200
Text: BZY97C10 GP. BZY97C200 GP 1.5 W Zener Diodes Dimensions in mm. DO-41 Plastic Voltage 10 to 200 V Power 1.5 W 5± 0.2 58.5 ±0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C. 3. Max. soldering time, 3.5 sec.
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BZY97C10
BZY97C200
DO-41
55Test
BZY68
BZY82
BZY100
BZY120
BZY150
BZY180
ZENER bzy18
bzy15
bzy200
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BZY97C
Abstract: ZENER bzy18 ZENER bzy97c bzy15 bzy12 BZY33 BZY150 bzy200 BZY120 BZY82
Text: BZY97C10GP.BZY97C200GP 1.5 W Zener Diodes DO-41 Plastic Voltage 10 to 220 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. Power 1.5 W +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.
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BZY97C10GP.
BZY97C200GP
DO-41
BZY56
BZY68
BZY82
BZY100
BZY120
BZY150
BZY180
BZY97C
ZENER bzy18
ZENER bzy97c
bzy15
bzy12
BZY33
bzy200
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BZY12
Abstract: BZY120 bzy200
Text: BZY97C10GP.BZY97C200GP 1.5 W Zener Diodes Current 1.5 W Voltage 10 to 200 V DO-204AL / DO-41 R FEATURES Glass passivated chip junction Hyperectifier structure for high reliability Cavity-free glass-passivated junction Low leakage current
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BZY97C10GP.
BZY97C200GP
DO-204AL
DO-41
2002/95/EC
2002/96/EC
DO-41.
bzy97cgp
Mar-12
BZY12
BZY120
bzy200
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BZY82
Abstract: Fagor GP BZY33 BZY120 BZY150 BZY56 BZY97C12 BZY97C22 bzy27 BZY22
Text: BZY97C10GP.BZY97C200GP 1.5 W Zener Diodes Current 1.5 W Voltage 10 to 200 V DO-204AL / DO-41 R FEATURES Glass passivated chip junction Hyperectifier structure for high reliability Cavity-free glass-passivated junction Low leakage current
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BZY97C10GP.
BZY97C200GP
DO-204AL
DO-41
2002/95/EC
2002/96/EC
DO-41.
MIL-STD-750
J-STD-002
BZY82
Fagor GP
BZY33
BZY120
BZY150
BZY56
BZY97C12
BZY97C22
bzy27
BZY22
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HSMS-2850-BLK
Abstract: HSMS-2802-BLK MSA-1105 HSMS-2822-TR1 IAM-81008-STR HSMS-2812BLK IAM-82008 HSMS-2824-BLK HSMS-2805-BLK HSMS-2850
Text: A g i l e n t Technologies Microwave Diodes, Integrated Circuits, GaAs FETs, Amplifiers and Mixers Diodes continued Please reference artwork on previous page. Surface Mount RF Schottky Barrier Diodes Mfr.Õs Type Bulk Tape and Reel 5082-2800 HSMS-2800-BLK
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HSMS-2829-BLK
HSMS-2800-BLK
HSMS-2802-BLK
HSMS-2802-TR1
INA-03184-BLK
IAM-82008-STR
IAM-81008-STR
HSMS-2850-BLK
MSA-1105
HSMS-2822-TR1
HSMS-2812BLK
IAM-82008
HSMS-2824-BLK
HSMS-2805-BLK
HSMS-2850
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GP 015 DIODE
Abstract: M63813FP M63813GP M63813KP M63813P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> POWEREX M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current
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M63813P/FP/GP/KP
300mA
M63813P/FP/GP/KP
300mA)
GP 015 DIODE
M63813FP
M63813GP
M63813KP
M63813P
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diode gp 805
Abstract: gp 835 zener 6352
Text: ZY6V2GP.ZY200GP 2 W Glass Passivated Zener Diode DO-15 Plastic Power 2.0 W Voltage 6.2 to 200 V. ø3.05±0.1 ø0.8±0.05 Dimensions in mm. R 6.35±0.2 58.5±0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.
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ZY200GP
DO-15
ZY56GP
ZY68GP
ZY82GP
ZY100GP
ZY120GP
ZY150GP
ZY180GP
diode gp 805
gp 835
zener 6352
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M63814FP
Abstract: M63814GP M63814KP M63814P
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63814P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current
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M63814P/FP/GP/KP
300mA
M63814P/FP/GP/KP
300mA)
M63814FP
M63814GP
M63814KP
M63814P
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diode gp 1.22
Abstract: No abstract text available
Text: ZY6V2GP.ZY200GP 2 W Glass Passivated Zener Diode DO-15 Plastic Power 2.0 W Voltage 6.2 to 200 V. ø3.05±0.1 ø0.8±0.05 Dimensions in mm. R 6.35±0.2 58.5±0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.
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ZY200GP
DO-15
ZY56GP
ZY68GP
ZY82GP
ZY100GP
ZY120GP
ZY150GP
ZY180GP
diode gp 1.22
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
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M63813P/FP/GP/KP
300mA
M63813P/FP/GP/KP
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GP 015 DIODE
Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
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M63813P/FP/GP/KP
300mA
M63813P/FP/GP/KP
GP 015 DIODE
GP 005 DIODE
GP 250 DIODE
M63813FP
M63813GP
M63813KP
M63813P
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M63814FP
Abstract: M63814GP M63814KP M63814P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63814P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
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M63814P/FP/GP/KP
300mA
M63814P/FP/GP/KP
M63814FP
M63814GP
M63814KP
M63814P
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M63812KP
Abstract: M63812P M63812FP M63812GP M63812 KP300
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63812P, M63812FP, M63812GP and M63812KP are seven-circuit Singe transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
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M63812P/FP/GP/KP
300mA
M63812P,
M63812FP,
M63812GP
M63812KP
300mA)
M63812P
M63812FP
M63812
KP300
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. HVGP-1000-1C 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 HIGH VOLTAGE DIODE RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE R PROPRIETARY SOFT GLASS JUNCTION
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HVGP-1000-1C
DO-41
GP1120
GP1500
DO-41
GP1250-1400
97bhvgp100
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zy 406 transistor
Abstract: GP 005 DIODE zy 406 16P2N M63813FP M63813GP M63813KP M63813P 16P2Z-A
Text: 三菱半導体〈トランジスタアレイ〉 M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE 概 要 M63813P/FP/GP/KPはNPNトランジスタで構成された7 回路のクランプダイオード付きのトランジスタアレイであり、
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M63813P/FP/GP/KP
300mA
M63813P/FP/GP/KPNPN7
300mA
16P2N-A
16P2S-A
16P2Z-A
M63813P
M63813FP
zy 406 transistor
GP 005 DIODE
zy 406
16P2N
M63813FP
M63813GP
M63813KP
M63813P
16P2Z-A
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QFN20
Abstract: T7024 T7024-PGP T7024-TRQ T7024-TRS PU-118
Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode
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PSSO20
QFN20
T7024
T7024
4533D
T7024-PGP
T7024-TRQ
T7024-TRS
PU-118
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history of bluetooth
Abstract: RF LNA 3.1 to 10.6 GHz 27 Mhz power amplifier class d power amplifier lna 15 dbm gain atmel 912 diagram sony lcd tv HIGH POWER ANTENNA SWITCH PIN DIODE POWER AMPLIFIER CIRCUIT DIAGRAM 10000 T7024-TRSY
Text: Features • • • • • • • • Single 3-V Supply Voltage High Power-added Efficient Power Amplifier Pout Typically 23 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode
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PSSO20
QFN20
T7024
T7024
4533H
history of bluetooth
RF LNA 3.1 to 10.6 GHz
27 Mhz power amplifier
class d power amplifier
lna 15 dbm gain
atmel 912
diagram sony lcd tv
HIGH POWER ANTENNA SWITCH PIN DIODE
POWER AMPLIFIER CIRCUIT DIAGRAM 10000
T7024-TRSY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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Untitled
Abstract: No abstract text available
Text: Fast recovery glass passivated rectifier diodes. 2.5 Amps, to 3 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max.Recurrent Repetitive Forward Forward Rectified Reverse Peak Forward Surge TYPE Current Current Voltage Current Ifrm
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FR251G
FR252G
FR253G
FR254G
FR255G
FR256G
FR257G
FR257G-STR
FR301G
FR302G
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FRI03G
Abstract: FR101G FR102G FR104G FR105G FR107G FR107G-STR
Text: Fast recovery glass passivated rectifier diodes. 1 Amp. to 2 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max.Recurrent Repetitive Forward Peak Forward Surge Forward Rectified Reverse TYPE Current Current Current Voltage If s m
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FR101G/GR1A
FR101G
FR102G
FRI03G
FR104G
FR105G
FR156G
FR157G
FR157G-STR
FR201G
FR107G
FR107G-STR
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