GK TRANSISTOR 42 Search Results

GK TRANSISTOR 42 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

GK TRANSISTOR 42 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTR ONI CS INC MMBT2484 42E D GH 7 ^ b 4 1 4 S 000=1035 T m SM GK NPN EPITAXIAL SILICON TRANSISTOR •> " T ' Z l - O C i LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	MMBT2484 71b414S D0lH03fe	PDF
Untitled Abstract: No abstract text available Text: TO SH IBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2744 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 Í Q MAY GK 7 + (1 ?	OCR Scan	2SK2744	PDF
GK transistor 42 Abstract: transistor FET cd 332 m Text: Mechanical Outlines MT-42 TO -18 02.0 1 2 3 Transistor O FET TO-39 ! CD Lead Code r *>4.74 S D G TO-72 04.74 08.26 ses 1 K Lead Code Unit : m m inch , T o lerance : +/- 0 .3 m m (0.012inch), N o scale 3-31 2 3 GK GA 4 A J B E C CASE G E B C CASE DH S D G	OCR Scan	MT-42 012inch) GK transistor 42 transistor FET cd 332 m	PDF
Transistor GK 0.9 Abstract: GK transistor DIODE 11 gk H11C1 H11C1X H11C2 H11C2X H11C3 H11C3X H11C4X Text: H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X H11C1, H11C2, H11C3, H11C4, H11C5, H11C6 PHOTON COUPLED ISOLATOR Ga As INFRARED EMITTING DIODE & LIGHT ACTIVATED SCR APPROVALS l UL recognised, File No. E91231 Dimensions in mm 2.54 7.0 6.0 'X' SPECIFICATION APPROVALS	Original	H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X H11C1, H11C2, H11C3, H11C4, Transistor GK 0.9 GK transistor DIODE 11 gk H11C1 H11C1X H11C2 H11C2X H11C3 H11C3X H11C4X	PDF
br101 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E » b b S B 'O l ;_ QDE7621 234 APX BR101 l SILIC O N C O N T R O L L E D SW IT C H The BR101 is a planar p-n-p-n switch in a TO -72 metal envelope, intended for time base circuits and other television applications. It is also suitable as trigger device for thyristors. It is an integrated p-n-p/	OCR Scan	QDE7621 BR101 BR101	PDF
4302NG Abstract: Magnus BMR ericsson Text: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EAB/FC/P Maria Rosendahl Approved PKB 4302NG EAB/FC/P Maria PI Rosendahl 1 (1) (4) No. Checked MICHORG 001 1/1301 52-EN/LZT - BMR 659	Original	52-EN/LZT 4302NG 22-A114 22-A115 J-STD-020C MIL-STD-202G Magnus BMR ericsson	PDF
photo transistor application Abstract: pair of led and photo transistor oki oc340 AN/npn photo transistor Text: - ♦PRODUCT o v e r v ie w # PHOTO COUPLING DEVICES PHOTO COUPLERS APPLICATION NOTES 1. General Description By coupling a light emitting element and a light sensing element, a single-function element	OCR Scan		PDF
gk 106 Abstract: BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor Text: MICRO ELECTRONICS LTD 51E D • bGT17ññ 0Q0107M 422 ■ MEHK Low Level and G eneral Purpose Amplifiers TYPE NO. POLARITY T -2 7 -0 1 CASE MAXIM UM RATINGS Pd <mW mA\| VCEO (V) 'c V CE(SAT) h fe 'c min max (m A \| V CE (V) max (V) 'c (mA) MPS3608 MPS3707	OCR Scan	bGT17ñ 0Q0107M O-92A gk 106 BCHL MICRO ELECTRONICS ltd transistor transistor TO-106 422 MPS6566 transistor	PDF
s41 hall sensor Abstract: Russian diode Transistor ML614S IC6001 FP99 Text: ORDER NO. DSC0703019CE B26 Digital Camera DMC-TZ3P DMC-TZ3PC DMC-TZ3PL DMC-TZ3EB DMC-TZ3EE DMC-TZ3EF DMC-TZ3EG DMC-TZ3EGM DMC-TZ3GC DMC-TZ3GD DMC-TZ3GK DMC-TZ3GN DMC-TZ3GT DMC-TZ3SG DMC-TZ2P DMC-TZ2PC DMC-TZ2PL DMC-TZ2EB DMC-TZ2EE DMC-TZ2EF DMC-TZ2EG DMC-TZ2EGM	Original	DSC0703019CE s41 hall sensor Russian diode Transistor ML614S IC6001 FP99	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC MEE D MPSA92/93 Bl 7 U 4 1 4 2 000=1070 0 H S M G K PNP EPITAXIAL SILICON TRANSISTOR -T -Z 7 -1 S HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage r MPSA92 : MPSA93 Collector-Emitter Voltage: MPSA92	OCR Scan	MPSA92/93 MPSA92 MPSA93	PDF
distance measure ultrasonic transducer Abstract: ceag ghg PBT GK 20 gl ultrasonic sensor Stahl 9303 ultrasonics circuits diagram 7 segment display 5011 K1207 ghg 44 ceag GK 74 transistor Text: Level and Pressure Product Information Ultrasonics 1 5,00 m 2 5,00 m 1 2 3 4 VEGASON Contents Contents 1 Product description 1.1 2 Function and application 2.1 2.2 2.3 3 Meas. range . 52	Original	NL-3800 CH-8330 distance measure ultrasonic transducer ceag ghg PBT GK 20 gl ultrasonic sensor Stahl 9303 ultrasonics circuits diagram 7 segment display 5011 K1207 ghg 44 ceag GK 74 transistor	PDF
Ericsson GM 12 Abstract: Ericsson GM 22 4302NG Ericsson reference manual GK transistor ericsson BMR 610 45 Ericsson AIR ericsson BMR 610 TP1 Thermal protection P1 TRANSISTOR Text: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other EAB/FC/P Maria Rosendahl Approved PKB 4302NG EAB/FC/P Maria PI Rosendahl 1 (1) (4) No. Checked MICHORG 001 1/1301 52-EN/LZT - BMR 659	Original	4302NG 52-EN/LZT Ericsson GM 12 Ericsson GM 22 Ericsson reference manual GK transistor ericsson BMR 610 45 Ericsson AIR ericsson BMR 610 TP1 Thermal protection P1 TRANSISTOR	PDF
BR101 Abstract: transistor T43 npn transistor AG TRANSISTOR n-p-n power transistor planar transistor c 5331 transistor ag philips br101 BR101A Transistor 5331 Text: N AMER PHILIPS/DISCRETE b*ìE D • ^53=131 DDE7&EL 23H BR101 I SILICON CONTROLLED SWITCH The 8R 101 is a planar p-n-p-n switch in a T O -72 metal envelope, intended fo r tim e base circuits and other television applications. It is also suitable as trigger device for thyristors. It is an integrated p-n-p/	OCR Scan	BR101 8R101 BR101 transistor T43 npn transistor AG TRANSISTOR n-p-n power transistor planar transistor c 5331 transistor ag philips br101 BR101A Transistor 5331	PDF
led phototransistor pair Abstract: toco Phototransistor til 81 Text: î] E2P0007-27-31 PHO TOCO UPLERS PRO DU CT OVERVIEW PHOTOCOUPLERS APPLICATION NOTES 1. GENERAL DESCRIPTIO N B y coupling a light emitting element and a light sensing element, a single-function element: can be created. The functional element thus produced is called a photocoupler, photointerrupter or sensor	OCR Scan	E2P0007-27-31 OCM22Q led phototransistor pair toco Phototransistor til 81	PDF

pin configuration transistor bd140 Abstract: 1N4007 L3234 L3235N STLC5046 STLC5048 TQFP44 V100 CR injector driver MJE350 equivalent Text: L3234 L3235N  HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYSTEM APPLICATIONS IMPLEMENTS ALL KEY ELEMENTS OF THE BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED	Original	L3234 L3235N L3234/L3235N L3234T/L3235NT pin configuration transistor bd140 1N4007 L3234 L3235N STLC5046 STLC5048 TQFP44 V100 CR injector driver MJE350 equivalent	PDF
CR injector driver Abstract: TQFP44 package 1N4007 L3234 L3235N MJE350 STLC5046 STLC5048 TQFP44 V100 Text: L3234 L3235N HIGHLY INTEGRATED SLIC KIT TARGETED TO PABX AND KEY SYSTEM APPLICATIONS HIGHLY INTEGRATED SUBSCRIBER LINE INTERFACE KIT FOR PABX AND KEY SYSTEM APPLICATIONS IMPLEMENTS ALL KEY ELEMENTS OF THE BORSCHT FUNCTION INTEGRATED ZERO CROSSING BALANCED	Original	L3234 L3235N L3234/L3235N L3234T/L3235NT CR injector driver TQFP44 package 1N4007 L3234 L3235N MJE350 STLC5046 STLC5048 TQFP44 V100	PDF
long range Phototransistor Detector 880nm Abstract: IR Phototransistor Detector 880nm xenon linear flash lamps varistor xf 030 pnp phototransistor IR LED and photodiode heart rate optocoupler with schmitt trigger input h11c optocoupler Silicon bilateral switch phototransistor ultraviolet Text: SYSTEMS DESIGN CONSIDERATIONS EMITTER AND DETECTOR SY S T E M S Light, Irradiance and Effectiveness When the word “ light” is used in this discussion instead of “ electromagnetic radiation,” it does not refer to just the visible part of the spectrum, but to that part of the spectrum where silicon light	OCR Scan		PDF
BUK627-400A Abstract: BUK627-400B ha 431 transistor transistor 431 N Text: N AMER P H I L I P S / D I S C R E T E BSE D • ^53=131 0020bS0 7 ■ PowerMOS transistor Fast Recovery Diode FET BUK627-400A BUK627-400B T -3 7 -II GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.	OCR Scan	BUK627-400A BUK627-400B BUK627 -400A -400B ha 431 transistor transistor 431 N	PDF
Untitled Abstract: No abstract text available Text: MG200Q1ZS40 HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S. C H O PPER A PPLIC A TIO N S. • • • • • High Input Impedance High Speed : tf=0.5,-/s Max. trr = 0.5,i/s (Max.) Low Saturation Voltage ; VCE (sat) = 4-0v (Max.) Enhancement-Mode The Electrodes are Isolated from Case.	OCR Scan	MG200Q1ZS40 I00000	PDF
2SK2744 Abstract: SC-65 Text: TOSHIBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2744 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1 Í Q MAY	OCR Scan	2SK2744 VDD-40V, 2SK2744 SC-65	PDF
AN549 Abstract: AN9607 HC4P5524-9 HC-5524 HC9P5524-5 Text: HC-5524 Data Sheet February 1999 File Number 2798.6 EIA/ITU 24V PABX SLIC with 25mA Loop Feed Features The HC-5524 telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation DI	Original	HC-5524 HC-5524 AN549 AN9607 HC4P5524-9 HC9P5524-5	PDF
Untitled Abstract: No abstract text available Text: HC-5524 Data Sheet [ /Title HC5524 /Subject (EIA/I TU 24V PABX SLIC with 25mA Loop F eed) /Autho r () /Keywords (Intersil Corporation, PRIS M, Wireless Communications , RF, Radio Frequency , IF, Intermediate Frequency February 1999 File Number 2798.6 EIA/ITU 24V PABX SLIC with 25mA	Original	HC-5524 HC5524) HC-5524 500products	PDF
TRANSISTOR GK 66 smd Abstract: No abstract text available Text: HC-5509B Data Sheet [ /Title HC5509B /Subject (ITU CO/Lo op Carrier SLIC) /Autho r () /Keywords (Intersil Corporation, Telecom, SLICs, SLACs , Telephone, Telephony, WLL, Wireless Local Loop, PBX, Private Branch Exchan ge, NT1+, July 1998 File Number 2799.6	Original	HC-5509B HC5509B) TRANSISTOR GK 66 smd	PDF
TRANSISTOR GK 66 smd Abstract: TRANSISTOR GKD smd 12v ballast ic HC4P5509B AN549 AN9607 HC-5509B TRANSFORMER ERL 35 GKD transistor Text: HC-5509B Data Sheet July 1998 File Number 2799.6 ITU CO/Loop Carrier SLIC Features The HC-5509B telephone Subscriber Line Interface Circuit integrates most of the BORSCHT functions on a monolithic IC. The device is manufactured in a Dielectric Isolation DI	Original	HC-5509B HC-5509B TRANSISTOR GK 66 smd TRANSISTOR GKD smd 12v ballast ic HC4P5509B AN549 AN9607 TRANSFORMER ERL 35 GKD transistor	PDF

GK TRANSISTOR 42 Search Results

GK TRANSISTOR 42 Result Highlights (5)

GK TRANSISTOR 42 Datasheets Context Search

Untitled

Untitled

GK transistor 42

Transistor GK 0.9

br101

4302NG

photo transistor application

gk 106

s41 hall sensor

Untitled

distance measure ultrasonic transducer

Ericsson GM 12

BR101

led phototransistor pair

pin configuration transistor bd140

CR injector driver

long range Phototransistor Detector 880nm

BUK627-400A

Untitled

2SK2744

AN549

Untitled

TRANSISTOR GK 66 smd

TRANSISTOR GK 66 smd