Gi Far Technology
Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. GFW160213-BNFAJP GIF SPECIFICATIONS T AR CUSTOMER : SAMPLE CODE : : DATE : Customer Sales Sign Sign 2008.08.04 N ECH
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GFW160213-BNFAJP
Gi Far Technology
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Untitled
Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. GIF SPECIFICATIONS Customer Sign GT02-SERIAL 2008.08.27 ROHS N ECH T AR CUSTOMER : SAMPLE CODE : DRAWIG NO. : DATE
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GT02-SERIAL
320X240
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ya11
Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. GIF SPECIFICATIONS Customer Sign GT01-SERIAL 2008.08.25 ROHS N ECH T AR CUSTOMER : SAMPLE CODE : DRAWIG NO. : DATE
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GT01-SERIAL
320X240
ya11
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Untitled
Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified
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TA1062-QC-EC
GFTM070DE800480
886-2-2668-837y
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Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified
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TA1062-QC-EC
GFTM043IA480272-S_
886-2-2668-8y
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Untitled
Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2008 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified
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TA1062-QC-EC
GFTRU070DF800480-GT03
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Untitled
Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified
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TA1062-QC-EC
GFTM043HA480272-S_
886-2-2668-8y
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lcm1602
Abstract: LCM0802 lcm-1602 LCM2002 GFC2002B LCD 1X16 GFC1602M
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. Quality Certified Environmentally Certified ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC
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TA1062-QC-EC
GFRU20X4-SERIES_
GFC2002B
115x36
80x36
GFC2002F
116x37
GFC2002G
lcm1602
LCM0802
lcm-1602
LCM2002
GFC2002B
LCD 1X16
GFC1602M
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Untitled
Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD Quality Certified No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC Environmentally Certified
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TA1062-QC-EC
GFTM056AB640480-S_
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Untitled
Abstract: No abstract text available
Text: 晶 發 科 技 有 限 公 司 GI FAR TECHNOLOGY CO.,LTD No. 11, Lane 249, Sec. 2, Chung Shan Rd., Shulin City, Taipei Hsien, Taiwan, R.O.C. Quality Certified Environmentally Certified ISO 9001:2008 ISO 14001:2004 Licence No: TA1062-QC-EC Licence No: TA1062-QC-EC
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TA1062-QC-EC
GFTM035EA320240-S
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AN-905
Abstract: FR4 dielectric
Text: Designing with LVDS Chapter 4 4.0.0 DESIGNING WITH LVDS 4.1.0 PCB BOARD LAYOUT TIPS Now that we have explained how LVDS has super speed, and very low power, noise, and cost, many people might assume that switching to LVDS or any differential technology will solve all of their noise
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MOSFET marking Z5
Abstract: AGQT ci 555 15Z DIODE agqs ci 567 datasheet AN-994 IRL1404Z IRL1404ZL IRL1404ZS
Text: PD - 94804A IRL1404Z IRL1404ZS IRL1404ZL AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l HEXFET Power MOSFET D VDSS = 40V
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4804A
IRL1404Z
IRL1404ZS
IRL1404ZL
reliable23
EIA-418.
O-220AB
MOSFET marking Z5
AGQT
ci 555
15Z DIODE
agqs
ci 567 datasheet
AN-994
IRL1404Z
IRL1404ZL
IRL1404ZS
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jat52
Abstract: TA-TSY-000191 PM5319 PM5319-NI PMC-2030860
Text: us t, 20 04 09 :2 1: 24 PM ARROW 622 ASSP Telecom Standard Product Data Sheet Released es da y, 10 Au g PM5319 gi es , In c. on Tu ARROW 622 Released Issue No. 2: July 2004 Do wn lo ad ed by Sc o tt E st es of i 2T ec h no lo ASSP Telecom Standard Product Data Sheet
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PMC-2031158,
PM5319
196-pin
PM5319-NI
jat52
TA-TSY-000191
PM5319
PM5319-NI
PMC-2030860
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PM5320-NI
Abstract: iso 3309 TA-TSY-000191 G-747
Text: us t, 20 04 09 :3 3: 07 PM ARROW 155 ASSP Telecom Standard Product Data Sheet Released es da y, 10 Au g PM5320 gi es , In c. on Tu ARROW 155 Released Issue No. 2: July 2004 Do wn lo ad ed by Sc o tt E st es of i 2T ec h no lo ASSP Telecom Standard Product Data
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PMC-2031159,
PM5320
196-pin
PM5320-NI
PM5320-NI
iso 3309
TA-TSY-000191
G-747
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PM5385
Abstract: smd l33 substitute D4D12 PM8610 34.368Mhz e2 e3 8448 bd234 NA-18
Text: 3: 16 AM ARROW 12xETEC ASSP Telecom Standard Product Data Sheet Preliminary ar y, 20 04 03 :1 PM5385 nd ay ,0 9F eb ru ARROW 12xETEC Data Sheet Preliminary Issue No. 3: January 2004 ed by da re en to u rk e yo fS ilic on ex pe rt Te ch no lo gi es Co .o n
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12xETEC
PM5385
12xETEC
PMC-2030120,
PM5385
smd l33 substitute
D4D12
PM8610
34.368Mhz e2 e3 8448
bd234
NA-18
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FS1016
Abstract: bpra070 C.E.L.P 24 v MSP58C80 Z0810 FS-1016 celp coding celp coding 1995 233236
Text: CELP Coding - MCELP on the MSP58C80 Literature Number: BPRA070 Texas Instruments Europe December 1997 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the
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MSP58C80
BPRA070
FS1016
bpra070
C.E.L.P 24 v
MSP58C80
Z0810
FS-1016
celp coding
celp coding 1995
233236
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Untitled
Abstract: No abstract text available
Text: International I«R Rectifier PD -5.055A PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK G A 100 T S 6 0 U Ultra-Fast Speed IGBT Features V qes — 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRF 860
Abstract: 5056B IRF 150a
Text: , I ,• In ternational I I«R Rectifier PD -5.056B preliminary "HALF-BRIDGE" IGBT INT-A-PAK G A 150TS6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V ces = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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OCR Scan
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150TS6
IRF 860
5056B
IRF 150a
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hexfred
Abstract: No abstract text available
Text: International Rectifier I«R PD -5.051 B PRELIMINARY "HALF-BRIDGE” IGBT DOUBLE INT-A-PAK GA400TD25S Standard Speed IGBT Features • Generation 4 IGBT technology V ces = 250V • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
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GA400TD25S
10kHz
hexfred
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GA75TS60U
Abstract: No abstract text available
Text: International I«R Rectifier PD -5.050B PR E LIM IN A R Y "HALF-BRIDGE” IGBT INT-A-PAK GA75TS60U Ultra-Fast Speed IGBT F eatu res V ces = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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GA75TS60U
GA75TS60U
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Untitled
Abstract: No abstract text available
Text: In te rn a tio n a l I«R Rectifier PD -5 .056A PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK G A 150T S 6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V q e s — 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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RF71
Abstract: ior 050a
Text: PD - 9.1560A International IG R Rectifier IRF9953 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel MOSFET • Surface Mount • Very Low Gate Charge and Switching Losses • Fully Avalanche Rated
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IRF9953
RF71
ior 050a
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IRF7343 N
Abstract: RF710 IRF7343
Text: I , In terna tional I PD- 9.1709 IQR Rectifier IR F 7 3 4 3 p r e l im i n a r y HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier
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RF710
Abstract: irf7317
Text: PD - 9.1568B In terna tional IOR Rectifier IRF7317 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MO SFET un di g N-Ch P-Ch 20V -2 0 V ~m D1 1 m~-
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1568B
IRF7317
RF710
irf7317
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