Untitled
Abstract: No abstract text available
Text: SKD 145 SEMIPONT 5 Bridge Rectifiers JB1W JBBW; JUBW RU X GYI Z A@:55 %0+:)*.%0C J GQII GNII J GQII GNII A=- X HP [$C 12U GYP¥GQ 12U GYP¥GN GHII GHII 12U GYP¥GH Symbol Conditions RU =- X HP [$ R]1W .a* Values Units GYI Z =S^ X QP [$_ GI &=S^ X GQP [$_ GI &=S^ X QP [$_ H;O LLL GI &-
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SKD 115 SEMIPONT 5 Bridge Rectifiers JB1W JBBW; JUBW RU X GGI Y A@:55 %0+:)*.%0C J GQII GNII J GQII GNII A=- X HP Z$C 12U GGP[GQ 12U GGP[GN GHII GHII 12U GGP[GH Symbol Conditions Values Units RU =- X HP Z$ GGI Y R¥1W =S] X QP Z$^ GI &=S] X GQP Z$^ GI &=S] X QP Z$^ H;O LLL GI &-
|
Original
|
|
PDF
|
0809 al
Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
Text: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE
|
OCR Scan
|
T-91-20
O-240)
PC-029«
0809 al
HALF BRIDGE NPN DARLINGTON POWER MODULE
SGS30D
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SI6968DQ VISHAY Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 r DS(ON) Id (& ) (A) 0.022 @ VGS = 4.5 V ±6 .5 0.030 @ VGS = 2.5 V ±5 .5 D D N-Channel MOSFET N-Channel MOSFET TSSOP-8 D Si D Si6968DQ S2 Si S2 Gi g2 Gi Top View
|
OCR Scan
|
SI6968DQ
Si6968DQ
S-56943â
02-Nov-98
|
PDF
|
MJDI12
Abstract: No abstract text available
Text: MJDI12 MJD117 SGS-THOMSON ¡Li @H gI COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW BASE-DRIVE REQUIREMENTS . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE . SURFACE-MOUNTING TO-252 (DPAK POWER PACKAGE IN TAPE & REEL
|
OCR Scan
|
MJDI12
MJD117
O-252
TIP112
TIP117
MJD112
MJD117
200ft
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ¿ = 7 SGS-THOMSON *7 # » TMMBAT 29 MD g @IlLi 'inS®ffl(gi SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE MAXIMUM RATINGS (limiting values Parameter
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: rrz SCSTWOMSON l^O !^ iti gíi®ÍMi0!gi 2N6050 SILICON PNP POWER DARLINGTON TRANSISTOR . • . . . . SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON HIGH GAIN HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL
|
OCR Scan
|
2N6050
2N6050
|
PDF
|
marking B33 diode
Abstract: marking thq
Text: /= T SGS-THOMSON *7#« B!»!llLi f[f3 iD gi TMMBAT 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. Matched batches are available on request. ABSOLUTE MAXIMUM RATINGS (limiting values
|
OCR Scan
|
|
PDF
|
F126
Abstract: 7W237
Text: SGS’THOMSON 0»ilLIM E!ID gi £ jJ BYT 11 -600 ->1000 FAST RECOVERY RECTIFIER DIODES • SOFT RECOVERY ■ VERY HIGH VOLTAGE ■ SMALL RECOVERY CHARGE APPLICATIONS ■ ANTISATURATION DIODES FOR TRANSIS TOR BASE DRIVE ■ SNUBBER DIODES ABSOLUTE RATINGS (limithg values
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: r=Z SGS-THOMSON ^ 7 # . MD gœiLI W iD(gi BAT 47 BAT 48 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such aselectrostaticdischarges.
|
OCR Scan
|
BAT47
BAT48
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPR151OD/F STPR1520D/F SGS-THOMSON £ RjflQ»[E[UiM R!lD gi ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY
|
OCR Scan
|
STPR151OD/F
STPR1520D/F
T0220AC
STPR1510D
STPR1520D
T0220AC
ISOWATT220AC,
TT220A
STPR1510F
STPR1520F
|
PDF
|
BAT 127
Abstract: No abstract text available
Text: r=Z SGS-THOMSON ^ 7 # . MD gœiLI W iD(gi BAT 42 BAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such aselectrostaticdischarges.
|
OCR Scan
|
|
PDF
|
ESM4045DV
Abstract: No abstract text available
Text: r^ Z *7 # SGS-THOMSON RfflB gi@llLIÊiri(3 iDes ESM4045DV NPN DARLINGTON POWER MODULE • HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE (2500V RMS) ■ EASY TO MOUNT
|
OCR Scan
|
ESM4045DV
ESM4045DV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGS"THOMSON 5 7 . TMMBAT 46 [H g ilLI(g¥lS(S lüia(gi SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metal to silicon diode featuring high breakdown voltage low tum-on voltage. ABSOLUTE RATINGS (limiting values) Parameter Symbol V rrm Repetitive Peak Reverse Voltage
|
OCR Scan
|
7T2TE37
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: C T SGS-THOMSON ^ 7 #. HD»HLI TO s lfSlD(gi B Y T 12 PI -1000 FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPABILITY ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING ■ INSULATED: Capacitance7pF
|
OCR Scan
|
10jus
|
PDF
|
T0220AC
Abstract: BUH DIODE diode current 1200A DTV32F1500A DTV32-1500A T0-220AC
Text: ¿ 7 7 SGS-THOMSON llD ©ilLI©TO©E!lD gi DTV32(F -1200A DTV32(F)-1500A (CRT HORIZONTAL DEFLECTION) HIGH VOLTAGE DAMPER DIODE For complete specifications refer to "SCHOTTKY RECURER DIODES" FEATURES • HIGH BREAKDOWN VOLTAGE CAPABILITY ■ LOW AND MEDIUM FREQUENCY OPERATION
|
OCR Scan
|
DTV32
-1200A
-1500A
ISOWATT220AC)
T0220AC
ISOWATT220AC.
T0220AC
ISOWATT220AC
BUH DIODE
diode current 1200A
DTV32F1500A
DTV32-1500A
T0-220AC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ^•7#. HD gœilLiOT iD(gi ESM 765-100 800 FAST RECOVERY RECTIFIER DIODES ■ HIGH VOLTAGE CAPABILITY ■ FAST AND SOFT RECOVERY ■ THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND I rm AT 100 °C UNDER USERS CONDITION APPLICATIONS
|
OCR Scan
|
7TSR237
DDb7G27
|
PDF
|
Untitled
Abstract: No abstract text available
Text: /T T SGS'THOMSON *J M . llD g[3 llLi TO@E!lD(gi ESM243-50 -* 400 FAST RECOVERY RECTIFIER DIODES • VERY FAST RECOVERY TIME (Metric thread ■ HIGH SURGE CURRENT CAPABILITY ■ VERY LOW FORWARD RECOVERY TIME ■ VERY LOW RECOVERED CHARGE APPLICATIONS DO 5
|
OCR Scan
|
ESM243-50
00b701b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: C T SGS-THOMSON ^ 7 # . HD»HLI TO s lfSlD(gi BYT 30PI-200 -» 400 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME Insulating voltage 2500 ■ VERY LOW SWITCHING LOSSES V rm s ■ LOW NOISE TURN-OFF SWITCHING ■ INSULATED: Capacitance 15pF
|
OCR Scan
|
30PI-200
|
PDF
|
Untitled
Abstract: No abstract text available
Text: / = T SGS-THOMSON ^ 7 M« Rffl[] g[^(Q [l[L[Igir[K]MD(gi L9930 DUAL FULL BRIDGE PRODUCT PREVIEW • m ■ ■ ■ 2Q INTERNAL CLAMPING VOLTAGE = 32V INTERNAL FREE WHEELING DIODES PARALLEL DRIVE CAPABILITY RESISTIVE OR INDUCTIVE LOAD R ds on = PROTECTION: ■ TEMPERATURE PROTECTION
|
OCR Scan
|
L9930
L9930PD
PowerS020)
L9930
|
PDF
|
Untitled
Abstract: No abstract text available
Text: C T SGS-THOM SON ^ 7 # . HD»HLI TO s lfSlD(gi BYT 11-600 h >1000 FAST RECOVERY RECTIFIER DIODES • SOFT RECOVERY ■ VERY HIGH VOLTAGE ■ SMALL RECOVERY CHARGE APPLICATIONS ■ ANTISATURATION DIODES FOR TRANSIS TOR BASE DRIVE ■ SNUBBER DIODES ABSOLUTE RATINGS (limiting values)
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: C T SGS-THOMSON ^ 7 # . HD»HLI TO s lfSlD(gi BYT 08P-200 ->400 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING Cathode connected to case SUITABLE APPLICATIONS ■ FREE WHEELING DIODE IN CONVERTERS
|
OCR Scan
|
08P-200
T0220AC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: rz7 SGS-THOMSON HJûïï[F»0 gi A 7# BAR 19 mmu SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intented for UHF mixers and ultrafast switching applications. DO 35 (Glass ABSOLUTE RATINGS (limiting values) P a ra m e te r
|
OCR Scan
|
|
PDF
|
BYT 13-800
Abstract: No abstract text available
Text: C T SGS-THOMSON ^ 7 # . HD»HLI TO s lfSlD(gi BYT 13-600 h >1000 FAST RECOVERY RECTIFIER DIODES • SOFT RECOVERY ■ VERY HIGH VOLTAGE ■ SMALL RECOVERY CHARGE APPLICATIONS ■ ANTISATURATION DIODES FOR TRANSIS TOR BASE DRIVE ■ SNUBBER DIODES ABSOLUTE MAXIMUM RATINGS (limiting values)
|
OCR Scan
|
|
PDF
|
