Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a
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CGHV27200
CGHV27200
CGHV27
GHV27200P
CGHV27200-TB
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Untitled
Abstract: No abstract text available
Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz
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Original
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PDF
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CGHV27200
CGHV27200
CGHV27
GHV27200P
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a
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Original
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PDF
|
CGHV27200
CGHV27200
CGHV27
GHV27200P
CGHV27200-TB
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a
|
Original
|
PDF
|
CGHV27200
CGHV27200
CGHV27
GHV27200P
|
Untitled
Abstract: No abstract text available
Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz
|
Original
|
PDF
|
CGHV27200
CGHV27200
CGHV27
GHV27200P
|
Untitled
Abstract: No abstract text available
Text: CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.5-2.7 GHz
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Original
|
PDF
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CGHV27200
CGHV27200
CGHV27
GHV27200P
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