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    Untitled

    Abstract: No abstract text available
    Text: CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7


    Original
    PDF CGHV27100 CGHV27100 CGHV27 GHV27100P

    CGHV27100

    Abstract: CGHV27 cree rf
    Text: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original
    PDF CGHV27100 CGHV27100 CGHV27 GHV27100P cree rf

    cree rf

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original
    PDF CGHV27100 CGHV27100 CGHV27 GHV27100P cree rf

    Untitled

    Abstract: No abstract text available
    Text: CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7


    Original
    PDF CGHV27100 CGHV27100 CGHV27 GHV27100P