Untitled
Abstract: No abstract text available
Text: CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7
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CGHV27100
CGHV27100
CGHV27
GHV27100P
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CGHV27100
Abstract: CGHV27 cree rf
Text: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is
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Original
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CGHV27100
CGHV27100
CGHV27
GHV27100P
cree rf
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PDF
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cree rf
Abstract: No abstract text available
Text: PRELIMINARY CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is
|
Original
|
CGHV27100
CGHV27100
CGHV27
GHV27100P
cree rf
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CGHV27100 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27100 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5 - 2.7
|
Original
|
CGHV27100
CGHV27100
CGHV27
GHV27100P
|
PDF
|