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    KZQ 55 - 12

    Abstract: OZEN 915 lek 100K0 402-3K HOK-4 Pb NK 90Z 1fbg N/KZQ+55-12
    Text: Ahgmkhe hnminm O^eZr PPO Ankk^gm + P^kbhnl bgcnkr fZr k^lnem b_ bglmkn\mbhgl Zk^ ghm _heehp^]. Nkh]n\m fZr [^ ]ZfZ`^], hk bgcnkr fZr k^lnem b_ bglmkn\mbhgl Zk^ ghm _heehp^]. {Qa^ _heehpbg` bl Zg ^qieZgZmbhg h_ ma^ lrf[hel nl^] bg ma^ hi^kZmbhg fZgnZe. + \Znmbhg:Ggcnkr hk ]Zg`^k fZr h\\nk ng]^k li^\bZe \hg]bmbhgl.


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    CN-IC-03-0120@ KZQ 55 - 12 OZEN 915 lek 100K0 402-3K HOK-4 Pb NK 90Z 1fbg N/KZQ+55-12 PDF

    GHM1540

    Abstract: GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384
    Text: This is the PDF file of catalog No.C16E-3. No.C16E3.pdf MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR DC250V-3.15kV/AC250V r.m.s. GHM Series MEDIUM-VOLTAGE CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C16E-3 This is the PDF file of catalog No.C16E-3.


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    C16E-3. C16E3 DC250V-3 15kV/AC250V C16E-3 GHM1000 GHM1500 AC250V GHM2000 GHM1540 GHM3045 Iec384-14 GHM3145 GHM2145 223k x7r 50 cd 471k capacitor GHM1040 GHM1545 iec384 PDF

    GHM3045

    Abstract: GHM1540 GHM1530 GHM1545 GHM1030 GHM1535 GHM1040 GHM1500 GHM3145 GHM1000
    Text: このカタログはNo.C16-4をムラタのwebサイトよりPDF形式でダウンロードしたものです。 C16J4.pdf 00.7.19 中高圧用 チップ積層セラミックコンデンサ DC250V-3.15kV/AC250V r.m.s. GHM シリーズ MEDIUM-VOLTAGE CHIP


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    C16-4webPDF C16J4 DC250V-3 15kV/AC250V C16-4 GHM1000 GHM1500 GHM2000 GHM3000 GHM3045 GHM1540 GHM1530 GHM1545 GHM1030 GHM1535 GHM1040 GHM1500 GHM3145 GHM1000 PDF

    lf375

    Abstract: 5SBA DT26 QT27 NMTC GHM 5 MH 3600 ZG 20XE-A
    Text: t Mi\]iae_ ae^fidYkafe RDKNDP@RSPD BMLRPMJJDP :;49:3:;497 958659 K @ L S @ J ? Hk ae\a[Yk]j Ye lg_iY\]\ gYik3 QaZgd rhn o^kr fn\a _hk l^e^\mbg` ?nmhgb\l ikh]n\ml. Efi pfli jY^]kp1 gc]Yj] i]Y\ k`] ^fccfnae_ Z]^fi] ljae_3 t BYlkafe ^fi pfli jY^]kp xNe^Zl^ d^^i ma^l^ bglmkn\mbhgl Zg] k^ob^p ma^f [^_hk^ nlbg` mabl ngbm.


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    T48vF48ff 44nnn3Ylkfea CN-C-03-0350K lf375 5SBA DT26 QT27 NMTC GHM 5 MH 3600 ZG 20XE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM 800GA176D .0 2 RE Q8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .S 2 RE Q8 B8 .S 2 PEH Q8 B8XY Trench IGBT Modules SKM 800GA176D 4;+0 PFHH 7 UVH C .0 2 UH Q8 EWH C PRHH C [ RH 7 PH ^+ .0 2 RE Q8 @VH C .0 2 UH Q8 ``H


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    800GA176D PDF

    VGM1-10

    Abstract: GHM 25
    Text: Rev 0; 2/08 I2C Gamma and VCOM Buffer with EEPROM Features The DS3510 is a programmable gamma and VCOM voltage generator which supports both real-time updating as well as multibyte storage of gamma/VCOM data in onchip EEPROM memory. An independent 8-bit DAC, two


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    DS3510 250mA DS3510 VGM1-10 GHM 25 PDF

    GHM PF

    Abstract: No abstract text available
    Text: Rev 0; 2/08 I2C Gamma and VCOM Buffer with EEPROM Features The DS3510 is a programmable gamma and VCOM voltage generator which supports both real-time updating as well as multibyte storage of gamma/VCOM data in onchip EEPROM memory. An independent 8-bit DAC, two


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    DS3510 250mA DS3510 GHM PF PDF

    GM8-GM14

    Abstract: Diode GHM eeprom 1011 GM1-GM14 88h-8Fh
    Text: Rev 1; 10/08 I2C Gamma and VCOM Buffer with EEPROM The DS3514 is a programmable gamma and VCOM voltage generator that supports both real-time updating as well as multibyte storage of gamma/VCOM data in onchip EEPROM memory. An independent 10-bit DAC, two 10-bit data registers, and four words of EEPROM memory are provided for each individually addressable


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    DS3514 10-bit 250mA DS3514 GM8-GM14 Diode GHM eeprom 1011 GM1-GM14 88h-8Fh PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev 1; 10/08 I2C Gamma and VCOM Buffer with EEPROM The DS3514 is a programmable gamma and VCOM voltage generator that supports both real-time updating as well as multibyte storage of gamma/VCOM data in onchip EEPROM memory. An independent 10-bit DAC, two 10-bit data registers, and four words of EEPROM memory are provided for each individually addressable


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    DS3514 10-bit 250mA DS3514 PDF

    DS3510

    Abstract: No abstract text available
    Text: Rev 0; 2/08 I2C Gamma and VCOM Buffer with EEPROM Features ♦ 8-Bit Gamma Buffers, 10 Channels ♦ 8-Bit VCOM Buffer, 1 Channel ♦ 4 EEPROM Bytes per Channel ♦ Low-Power 400µA/ch Gamma Buffers ♦ I2C-Compatible Serial Interface ♦ Flexible Control from I2C or Pins


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    48-Pin DS3510T+ DS3510T DS3510 DS3510 PDF

    3135 ad hex nv

    Abstract: AD 1X VGM1-10 DS3510
    Text: Rev 0; 2/08 I2C Gamma and VCOM Buffer with EEPROM Features The DS3510 is a programmable gamma and VCOM voltage generator which supports both real-time updating as well as multibyte storage of gamma/VCOM data in onchip EEPROM memory. An independent 8-bit DAC, two


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    DS3510 250mA inter10 DS3510 3135 ad hex nv AD 1X VGM1-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: R P 2 5 2 4,7h. P T C : , 7 '/./ C OPERATING UHM2 +/ - 5 X RANGE¡-55 GTGRAGG RANGE : - 6 5 THERMAL TIME DI5 I P AT I □ N POWER TG TG 125 150 C G N C T A NT :t ,0 CGN5 T A NT ! 2 , 5 RATIN G 125W G 25 C C CEC, MAX n W/ G MI N C , DERATE TG o 125 PFCICTANCP


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    RP25C 125WG25 NAMEM512472U PIGI55 GTG12-472U PDF

    kbs 3AB

    Abstract: No abstract text available
    Text: ?=<10 B@C@9HIF< ?@>? EDK<F A9H:?@C> F<A9L =PM[\YPZ _ _ _ _ _ _ _ _ _ |BE> -Hiu{lnoplr pkw LPBM<ABG@ <:I:;BEBMR +:FI EH:= NI MH pkkk6 ,HMHK EH:= NI MH p~/ ,:Qi BGKNLA <NKK>GM nkkwjmFL zB>E><MKB< LMK>G@MAu FHK> MA:G oD5 d;>MP>>G <HBE :G= <HGM:<MLe ,:GN:E LPBM<A ?NG<MBHG :O:BE:;E>


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    PDF

    3120F

    Abstract: kob my hkf k
    Text: =;:4 EG7@>A>6FGD: >AF:D@:9>6F: CBI:D D:?6J ;OK[\YOZ ] ,:M<ABG@ MRI>L :O:BE:;E> ] *B@A L>GLBMBO> ] *B@A LPBM<ABG@ <:I:<BMR lxglyu sx mpk6xzv mxg myglx f lyu px mpk6xz ] l }HKF xgl }HKF yg m }HKF xgm }HKF y :G= lx f ly <HGM:<M :KK:G@>F>GM ] |GOBKHGF>GM:E ?KB>G=ER IKH=N<M d2H*3 <HFIEB:GMe


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    8BAF68F 3120F kob my hkf k PDF

    gde 103

    Abstract: gde marking 307 GDE TRANSZORB gem gfx 77 marking GHS ggk 75 GHR TVS GGR 55 GFR 310
    Text: SMCJ5.0A thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e d n Exte e Rang g a t l Vo 0.185 MAX. (4.69 MAX.)


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    188CA DO-214AB 50mVp-p gde 103 gde marking 307 GDE TRANSZORB gem gfx 77 marking GHS ggk 75 GHR TVS GGR 55 GFR 310 PDF

    gde 103

    Abstract: diode marking GDE on semiconductor GGZ 47 gfx 5ca marking code GGt gfx transient marking code BFK marking ghm SMCJ 5.0A SMCJ GFR
    Text: 1500W Surface Mount Transient Voltage Suppressor SMCJ 5.0A - 170CA 1500W Surface Mount Transient Voltage Suppressor Features • Stand-off voltage from 5.0 to 170 volts • Glass passivated junction • 1500W peak pulse power capability with a 10/1000 s waveform,


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    170CA 10/1000s E315008 gde 103 diode marking GDE on semiconductor GGZ 47 gfx 5ca marking code GGt gfx transient marking code BFK marking ghm SMCJ 5.0A SMCJ GFR PDF

    GHR TVS

    Abstract: gde 103 marking ghm gfx 77 marking GHS bFK 96 smcj5.0a GDE GENERAL SEMICONDUCTOR MARKING bfm GGV 85 A
    Text: SMCJ5.0A thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e d n Exte e Rang g a t l Vo 0.185 MAX. (4.69 MAX.)


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    188CA DO-214AB 50mVp-p GHR TVS gde 103 marking ghm gfx 77 marking GHS bFK 96 smcj5.0a GDE GENERAL SEMICONDUCTOR MARKING bfm GGV 85 A PDF

    u835

    Abstract: No abstract text available
    Text: PTC : , 77/ G RÊ25C I 50 0 □HM0: + /-17. □ P E P A T I NG P A N C E ¡ -55 TC 125 C CTCRAGE P A N G E : - b 5 TG 150 C THERMAL T I M E CG N 0: T A GT : t, 0 0 EC, MA X D I C I P A T I □G GGGC T A GT i 2 , 5 n W/ C MI G FEWER P A T I GG 5WG25G , DERATE TE 1G5


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    5WG35C L-R-23648/9 MIC-R-GE64GXG u835 PDF

    Untitled

    Abstract: No abstract text available
    Text: R Ê 2 5 C I 12 0 □ H M 2 + / - 1 0 X PTC ! .7 y./ c O P E R A T I N G R A N G E ¡-55 TG 125 G 2 T G E A G G R A N G E ! - 5 5 TG 150 C T H E R M A L T I M E L G N 2 T A N T >10 2 EC, MAX H I2 2 1 F A T I G N C G N 2 T A N T :2 ,5 n W / 2 M I N F E W E R F A T I N G 0 b £ W @ £ 5 C ,D E P A T E TG 125


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    RANGEi-55 01R1R QTG10-121G PDF

    GFM, TVS

    Abstract: transzorb marking code GEM marking code bdu marking code BFK 94 tr/gfx 77
    Text: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend Cathode Band d e d n nge e t x E e Ra g a t l Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20)


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    188CA DO-214AB 50mVp-p GFM, TVS transzorb marking code GEM marking code bdu marking code BFK 94 tr/gfx 77 PDF

    SMCJ7.5 CA

    Abstract: gde 103
    Text: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressor Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) ed e d n Exte e Rang g a t l Vo Mounting Pad Layout 0.185 MAX.


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    188CA DO-214AB 50mVp-p SMCJ7.5 CA gde 103 PDF

    transzorb marking code GEM

    Abstract: general semiconductor marking code GFX ghg 712 marking code GDD gde 103 ghg 122 307 GDE
    Text: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend Cathode Band d e d n nge e t x E e Ra g a t l Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20)


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    188CA DO-214AB 50mVp-p transzorb marking code GEM general semiconductor marking code GFX ghg 712 marking code GDD gde 103 ghg 122 307 GDE PDF

    gfu 65

    Abstract: No abstract text available
    Text: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend Cathode Band d e d n nge e t x E e Ra g a t l Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20)


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    188CA DO-214AB 50mVp-p gfu 65 PDF

    bel 188 transistor

    Abstract: GHR TVS diode marking GDE on semiconductor transzorb marking code GEM marking code GGt transistor BEL 188 BDW 65 C transistor BFD 162 BFM General Semiconductor TRANSZORB gem
    Text: SMCJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC J-Bend Cathode Band 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) d e d n nge e t x E e Ra ag t l o V Stand-off Voltage 5.0 to 188V


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    188CA DO-214AB DO-214AB 50mVp-p 1-May-02 bel 188 transistor GHR TVS diode marking GDE on semiconductor transzorb marking code GEM marking code GGt transistor BEL 188 BDW 65 C transistor BFD 162 BFM General Semiconductor TRANSZORB gem PDF