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    Abstract: No abstract text available
    Text: S O NY CORP/COMPONENT PRODS MTE 0302303 D GGG31b4 1 DM-232 SONY. -r- 4,-s"-รถ>s" Magnetoresistance Element Description Unit: mm Package Outline D M -232 a m agnetic sensor using magnetoresistance effect is com posed of ferrom agnetic m aterial deposited by evaporation on a silicon substrate.lt is


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    PDF GGG31b4 DM-232 DDD31b7