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    Abstract: No abstract text available
    Text: Advanced Power MOSFET S F W /I9 6 4 0 FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on ■ Lower Input Capacitance lD = -11 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA(Max.) @ VDS = -200V


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    PDF -200V 7Tb4142 GG4G121 SFW/I9640 04D123