Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N AFE1115 HDSL/MDSL ANALOG FRONT END WITH VCXO FEATURES • • • • • COMPLETE HDSL ANALOG INTERFACE • E1, T1 AND MDSL OPERATION • VCXO AND VCXO CONTROL CIRCUITRY +5V ONLY 5V or 3.3V Digital SCALEABLE DATA RATE 300mW POWER DISSIPATION
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AFE1115
300mW
56-PIN
AFE1115
17313b5
Z2346
M0-118-AB
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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Am29F400AT/Am29F400AB
8-Bit/262
16-Bit)
44-pin
48-pin
0E5752Ã
Am29F400T/Am29F400B
18612B.
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Untitled
Abstract: No abstract text available
Text: HB526C272EN-10IN, HB526C472EN -10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15,1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and
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HB526C272EN-10IN,
HB526C472EN
-10IN
576-word
72-bit
ADE-203-693C
HB526C272EN,
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