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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hfE=1000 @ V ce= 4V, lc = 1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -220 Complementary to TIP115/116/117	OCR Scan	TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112 GG2SS65	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hfE=1000 @ V ce= 4V, lc = 1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -220 Complementary to TIP115/116/117

OCR Scan

TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112 GG2SS65

PDF