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Catalog Datasheet	MFG & Type	PDF	Document Tags
GFC39V6471 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V6471 s s s * “ " " 6 .4 —7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The GFC39V6471 is an internally impedance-matched GaAs power F E T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	PDF	GFC39V6471 MGFC39V6471 Item-01: Item-51: 27C102P, RV-15 16-BIT) GFC39V6471

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GFC39V6471

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V6471 s s s * “ " " 6 .4 —7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The GFC39V6471 is an internally impedance-matched GaAs power F E T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

OCR Scan

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GFC39V6471 MGFC39V6471 Item-01: Item-51: 27C102P, RV-15 16-BIT) GFC39V6471