MGFC39V5964A
Abstract: pj 59
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A fin » cn 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F C 3 9 V 5 9 6 4 A is an internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 5 . 9 — 6 . 4
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MGFC39V5964A
MGFC39V5964A
10MHz
pj 59
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A 5 . 9 —6.4G H z BAND 8 W INTERNALLY MATCHED GaAs FET •>rnC V DESCRIPTION The M G FC 3 9 V 5 9 6 4 A is an internally impedance-matched GaAs power F E T especially designed for use in 5.9 —6 .4 GHz band amplifiers. The hermetically sealed metal ceramic
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GFC39V5964A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A So«1' Q 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 5 9 6 4 A is an internally im pedance-matched GaAs power F E T especially designed for use in 5 .9 —6 .4 GHz band amplifiers. The hermetically sealed metal-ceramic
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GFC39V5964A
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mgfc39v5964
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964 6 .4 G H z BAND 8W IN T E R N A L L Y M A TCH ED GaAs F E T DESCRIPTION The GFC39V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
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GFC39V5964
MGFC39V5964
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GFC39V5964
Abstract: mgfc39v5964
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> plan *oK p.oduc^ M GFC39V5964 S .9 —6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The GFC39V5964 is an internally impedance-matched GaAs power F E T especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC39V5964
Item-01:
Item-51:
GFC39V5964
M5M27C102P,
RV-15
16-BIT)
GFC39V5964
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