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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5258 5 . 2 —5 .8 G H z BAND 8 W INTERNA LLY MATCHED GaAs FET DESCRIPTION The M G FC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	PDF	GFC39V5258 FC39V5258

Catalog Datasheet

MFG & Type

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Document Tags

Untitled

Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5258 5 . 2 —5 .8 G H z BAND 8 W INTERNA LLY MATCHED GaAs FET DESCRIPTION The M G FC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic

OCR Scan

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GFC39V5258 FC39V5258