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    GFC36V7785 Search Results

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    F20i

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> l oX p\an M GFC36V7785 p r o d u c t'0 *1 J discontinue 7 .7 —8.5G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8 .5


    OCR Scan     		PDF GFC36V7785 F20i

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> pvoduction MGFC36 V 7785 p la n * ° r d ,s c o n t .n u e 7.7 ~ 8.5G H z BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M GFC36V7785 is an internally impedance-matched GaAs power F E T especially designed for use in 7.7 ~ 8.5


    OCR Scan     		PDF MGFC36 GFC36V7785 Item-01: 27C102P, RV-15 16-BIT)

    MGF2430A

    Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E


    OCR Scan     		PDF 12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445