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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF2407A MICROW AVE POW ER GaAs F E T DESCRIPTION The M G F 2 40 7A , power GaAs FET w ith an N-channel scho ttky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES • High o u tp u t power • P-,dB “ 24.5 dB m TYP. @ 14.5 GHz


    OCR Scan     		PDF GF2407A t3-25

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2407A M ICRO W AVE POW ER GaAs FE T DESCRIPTION T he M G F 2 4 0 7 A , pow er GaAs F E T w ith an N-channel schottky gate, is designed fo r use in S to Ku band a m p li­ fiers. FEATURES • High o u tp u t power •


    OCR Scan     		PDF F2407A