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Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0907B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 7 B , GaAs FET with an N-channel schottky Unit: millimeters gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation
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GF0907B
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fet K 793
Abstract: MGF0907b MGF0907 2SC 1570 GP 24A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0907B L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 7 B , GaAs FET with an N-channel schòttky U n it : m i ll im e t e r s gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation
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OCR Scan
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PDF
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MGF0907B
MGF0907B,
40dBm
fet K 793
MGF0907b
MGF0907
2SC 1570
GP 24A
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