GDE 4C
Abstract: CI -dp904c YLE relay
Text: 97/.07-0 `}/6cgfkycka <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHWXUKV Z Z Z Z Z Z ift JN@K:?@E> :8G89@C@KP {<8MP CF8; LG KF mbhff4t .vu :F@C K<ID@E8CJb @;<8C =FI ?<8MP ;LKP CF8; 58J? K@>?K 8E; ;LJK GKFK<:K<; KPG<J 8M8@C89C< vC8JJ y @EJLC8K@FE 8M8@C89C< jB4 ;@<C<:KI@: JKI<E>K?
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A276BF
GDE 4C
CI -dp904c
YLE relay
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HB 541
Abstract: No abstract text available
Text: 97/.07,0 <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHWXUKV W W W W W W jft IM?J9>?D= 97F78?B?JO {;7LO BE7: KF JE mhff3t -vu 9E?B J;HC?D7BIb ?:;7B <EH >;7LO :KJO BE7: 47I> J?=>J 7D: :KIJ FJEJ;9J;: JOF;I 7L7?B78B; vB7II y ?DIKB7J?ED 7L7?B78B; jA3 :?;B;9JH?9 IJH;D=J> `8;JM;D 9E?B 7D: 9EDJ79JIa
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97F78
9EDJ79JIa
vEDJ79J
vEDJ79J
97F79
9EDJ79J
9JHE79EKIJ
HB 541
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GDFG
Abstract: No abstract text available
Text: 97/.07,0 <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHWXUKV W W W W W jft IM?J9>?D= 97F78?B?JO {;7LO BE7: KF JE mhff3t -vu 9E?B J;HC?D7BIb ?:;7B <EH >;7LO :KJO BE7: -B7IJ?9 I;7B;: 7D: :KIJ FJEJ;9J;: JOF;I 7L7?B78B; jA3 :?;B;9JH?9 IJH;D=J> `8;JM;D 9E?B 7D: 9EDJ79JIa W 2~ ?DIKB7J?ED IOIJ;Cp vB7II y 7L7?B78B;
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97F78
9EDJ79JIa
vEDJ79J
97F79
9EDJ79J
9JHE79EKIJ
GDFG
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kiv 43 n
Abstract: cz bc agd8 eul jl LYXZ 31AA agse kiv 43 D
Text: q Efcbh dVbZ` ^YZbh^[^XVh^cb M@KDI JDPDN BE?F D@CA@D J @ K Q @ I 4 GH 5 FL 6 IL MPOPTLQ RUQTP RNTNS 4 9 5 XW RTKV 7 8 q OdZX^[^XVh^cbg EcXY` HckYf gidd`m HckYf Wcbgiadh]cb =]gd`Um aYh\cX =]gd`Um UWWifUWm tH`YUgY _YYd h\YgY ]bghfiWh]cbg UbX fYj]Yk h\Ya VYZcfY ig]b[ h\]g ib]h*
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NDF9406
Abstract: No abstract text available
Text: JFET Transistors z > N-Channel JFETs National Semiconductor in m 3E Low Leakage— High CMRR— Wide Band Dual JFETs O Operating Conditions for these Characteristics Type No. z Op. |Vqsi-2I Drift lG pF Gow CMRR Vg. C it .C n .B V Vp Gf «R loss Gfs Gowl-2 ,G1-IG2 Process Pkg.
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NDF9406
NDF9407
NDF9408
NDF9409
NDF9410
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sim holder pinout
Abstract: sim card holder
Text: 8 7 V1.1 I N O T E: T H IS D E V IC E IS ROHS C O M P L IA N T . REVISIONS SYM A DESCRIPTION DATE APPROVED A MATERIAL: SYM A DESCRIPTION DATE APPROVED A «CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! 204 HOUSING: HI.-TEMP. PLASTIC UL 9 4 V -0 , COLOR: BLACK
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1000MG
SIM004-Rt08GX
09/JUL/07'
SIM004â
Rt08G_
sim holder pinout
sim card holder
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AWG16 wire
Abstract: CDB400 40AMP 13w3
Text: 8 V1.1 I N O T E: T H IS 7 D E V IC E IS ROHS REVISIONS C O M P L IA N T . SYM DESCRIPTION DATE APPROVED SYM A A 53.10 DESCRIPTION DATE APPROVED A A «CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! 21.80 47.04 066 21.20 10.20 38.96 14.48
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CDB400P1
-WM13W3G
CDB400P2-WM13W3G
CDB400P4-WM13W3G
CDB400C1-WM13W3G
CDB400C2-WM13W3G
CDB400X-WM13W3GX-H
10AMP
PO00X-WM13W3GX-H
AWG16 wire
CDB400
40AMP
13w3
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4-40UNC
Abstract: No abstract text available
Text: 8 V1.1 I N O T E: T H IS 7 D E V IC E IS ROHS C O M P L IA N T . REVISIONS SYM A DESCRIPTION DATE APPROVED A SYM A DESCRIPTION DATE APPROVED A «CUSTOMER DRAWING FOR REFERANCE ONLY, SAMPLES APPROVAL ARE REQUIRED!! 047 SPECIFICATIONS: ELECTRICAL CHARACERISTICS:
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4-40UNC
5000Mfi
HDB200-PF15GX-L
4-40UNC
06/JUN/07'
HDB200-PF15G
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Untitled
Abstract: No abstract text available
Text: Embedded Controller Features • PowerPC RISC CPU core and instruction set architecture • Pipelined CPU core runs at up to 4X the external bus clock rate • Separate instruction cache and write-back/ write-through data cache, both two-way setassociative
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32-bit
401GF
0DQ12DÃ
401GF
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SIEMENS winch
Abstract: 81C90 siemens ppi C166 C167CR
Text: MICROCONTROLLERS Connecting the C166 architecture to ÌA E 6-1C&Qi'ÌSI LÙNtmtTTClr1- IJirgs jjw a * C o n t r o lle r a re a n e t w o r k s { C A N s iir e b e c o m in g in m e n c ir c u ils m i s h o w jiv e f lu - s y . r u l i a l j l c I1 0 «
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Cl67Cx
16-bit
Gi67Ca
SIEMENS winch
81C90
siemens ppi
C166
C167CR
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6KD8
Abstract: 5kd8 rs tube
Text: 5KD8 TIMO-SOL - s TRIO D E-PEN TO D E M IN IA T U R E T Y P E FOR .875 U SE AS A C O M B IN E D VH F O S C IL L A T O R A N D M IX E R 1.930 2.189 MAX MAX COATED U N IP O T E N T IA L C A T H O D E A N Y M O U N T IN G PO SIT IO N
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RS-239
6KD8
5kd8
rs tube
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4p4c JACK
Abstract: 35MM
Text: R E V IS IO N S SY M D E S C R IP T IO N DATE APPRO VED SYM A A A A D IS C R E T IO N DATE APPRO VED KEY M A T E R IA L : H O U SIN G : PB T PO LYESTER U L - 9 4 V - 0 . STA N DA RD C O LO R: T ER M IN A L: 0 .3 5 M M M IX E D G L A S S FIBER. BLACK T H ICK P H O S - B R O N Z E
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UL-94V-0.
MJK601â
Pa441
10/MAR/03'
MJK601
4p4c JACK
35MM
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6BA7
Abstract: 6ba7 tube tube 6BA7 id48 6SB7
Text: TENTATIVE DATA 6BA7 /- TUHG-SOL HEPTODE M IN IA T U R E 8 “1 TYPE UNI PO TEN T IA L CATHODE ‘MAX. HEATER P — 6 . 3 VO LTS MAX. T -6 | 3 0 0 MA. AC OR DC c e M AX. ANY MOUNTING P O S IT IO N G LA SS BULB SMALL 9 PIN BUTTON BASE THE 6 B A 7 IS A CATHODE TYPE H IG H G A IN P E N T A G R ID CO NVERTER IN THE SM A LL
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I94SBY
6BA7
6ba7 tube
tube 6BA7
id48
6SB7
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ECL86
Abstract: pentode ecl86 triode push-pull circuit 1970 eCl8 Philips electronic tube handbook
Text: ECL86 T R IO D E-O U TP U T PENTODE Triode pentode with separate cathodes. The triode section is intended for use as A .F . am plifier. The pentode section is intended for use as A .F . power am plifier. QUICK REFERENCE DATA Triode section 1.2 mA 1 .6 mA/V
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ECL86
ECL86
pentode ecl86
triode push-pull circuit
1970
eCl8
Philips electronic tube handbook
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SMD MARKING "68A"
Abstract: RD710 AN-994 IRF9520S SMD-220 smd diode 319 k 68a Diode SMD SJ 98
Text: PD-9.915 International S Rectifier IRF9520S HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in T ape & Reel Dynam ic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching V D SS = - 1 0 0 V
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IRF9520S
SMD-220
SMD MARKING "68A"
RD710
AN-994
IRF9520S
smd diode 319
k 68a
Diode SMD SJ 98
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SMD Transistor 1c
Abstract: No abstract text available
Text: SIEMENS TLE 4266 5 -V L o w -D ro p V o lta g e R e g u la to r Bipolar 1C Features • Output voltage tolerance < ± 2 % • V e ry low current consum ption • Low-drop voltage • Overtemperature protection • R e v e rs e polarity proof • Wide tem perature range
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Q67006-A9152
P-SOT223-4-2
Q67006-A9355
T223-4-2
GSV10
P-SOT223-4-2
SMD Transistor 1c
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chn 840
Abstract: chn 809 ST cny 17 g3 CNY 817 CHN 841 CNY 417 626 T40 NOG CHN 628 CHN 849 845 bios chip
Text: MIL-M- 38 51 0/ 17 8A 30 April 1984 SUPERSEDING MI L- M- 38 51 0/ 17 8 28 June 1979 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, CMOS, M U L T I P L E XE RS /D EMU LT IP LE XE RS MO NO LI TH IC SILICON, POSITIVE LOGIC This specification is approved for use by all D e p a r t
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MIL-M-38510/178A
MIL-M-38510/178
MIL-M-38510.
15-channel
A3757
chn 840
chn 809 ST
cny 17 g3
CNY 817
CHN 841
CNY 417
626 T40 NOG
CHN 628
CHN 849
845 bios chip
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tda audio amplifier 2,5w
Abstract: class d amplifier tda 25w SGS-Thomson TDA LAYOUT PENTAWATT
Text: rzz SGS-THOMSON ^ 7 # . TDA2008 K 12W AUDIO AMPLIFIER Vs = 22V, R|_=4i2 DESCRIPTION The TDA2008 is a mololithic class B audio power amplifier in Pentawatt package designed for driv ing low impedence loads (down to 3.2Q). Thedivice provides a high output current capability (up to 3A),
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TDA2008
TDA2008
tda audio amplifier 2,5w
class d amplifier tda 25w
SGS-Thomson TDA
LAYOUT PENTAWATT
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hp 530 charging CIRCUIT diagram
Abstract: No abstract text available
Text: r r u r m TECHNOLOGY _ LTC1479 PowerPath C ontroller fo r Dual B attery Systems F€flTUft€S DCSCRICTIOn • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup ■ Compatible with Li-Ion, NiCd, NiMH and Lead-Acid
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LTC1479
36-Lead
LTC1538-AUX
LT1620
LTC1435
LT1621
S51fl4bÃ
OD177T7
434-0507-TELEX:
1479f
hp 530 charging CIRCUIT diagram
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Untitled
Abstract: No abstract text available
Text: A S E M I R C H I L D Revised Novem ber 1998 I C G N D U C T D R tm 74F398 • 74F399 Quad 2-Port Register sion of the F398, with only th e Q outputs of the flip-flops available. General Description The F398 and F399 are th e logical equivalents of a quad 2input m ultiplexer feeding into fo u r edge-triggered flip-flops.
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74F398
74F399
16-pin
74F399SC
74F399Slant
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Untitled
Abstract: No abstract text available
Text: IRF820 N - CHANNEL 500V - 2.5 Q - 2.5 A - TO-220 PowerMESH MOSFET TYPE IRF820 V dss Id R D S o n 500 V < 3 2.5 A Q Q. • TYPICAL Ros(on) = 2.5 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED
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IRF820
O-220
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k554
Abstract: kiv 499 BUK554-200A BUK554-200B
Text: PHILIPS INTERNATIONAL bSE D m 7110fl2h D0b423b TTS « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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BUK554-200A/B
-T0220AB
ID/100
k554
kiv 499
BUK554-200A
BUK554-200B
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Uch81
Abstract: r824 Triode
Text: UCH81 TRIODE-HEPTODE T riode-heptode. Heptode section intended fo r use as m ix er R .F . - o r I .F . a m p lifie r. T riode section intended fo r use as o sc illa to r in A .M ./F .M . re c e iv e rs. QUICK REFERENCE DATA T riode section Anode cu rren t
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UCH81
Uch81
r824
Triode
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transistor Bs 998
Abstract: No abstract text available
Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129
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BB515
p270k2
transistor Bs 998
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