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    GERMANIUM TRANSISTOR TABLE Search Results

    GERMANIUM TRANSISTOR TABLE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM TRANSISTOR TABLE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SGA-1263Z

    Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS100916 SGA-1263Z SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a

    Germanium power

    Abstract: No abstract text available
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF ON5088 OT343F JESD625-A Germanium power

    BFU610F

    Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power
    Text: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU610F OT343F BFU610F SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power

    Untitled

    Abstract: No abstract text available
    Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU710F OT343F JESD625-A

    Untitled

    Abstract: No abstract text available
    Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU760F OT343F JESD625-A

    Untitled

    Abstract: No abstract text available
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS111011

    SGA1263Z

    Abstract: SGA1263
    Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA1263Z DCto4000MH SGA1263Z DCto4000MHz OT-363 50GHz DS111011 SGA1263

    BFU725F

    Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power

    transistor marking N1

    Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
    Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave

    BFU725F

    Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU725F OT343F JESD625-A BFU725F germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference Germanium power

    BFU790F

    Abstract: JESD625-A Germanium power
    Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU790F OT343F JESD625-A BFU790F Germanium power

    JESD625-A

    Abstract: BFU710F DRO lnb Germanium power
    Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU710F OT343F JESD625-A BFU710F DRO lnb Germanium power

    Germanium Transistor

    Abstract: Germanium power ON5088,115
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF ON5088 OT343F JESD625-A Germanium Transistor Germanium power ON5088,115

    2.4 ghz transistor wifi amplifier

    Abstract: Germanium power 160 germanium transistor wifi lna Ghz dB transistor
    Text: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.1 — 16 November 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU768F OT343F JESD625-A 2.4 ghz transistor wifi amplifier Germanium power 160 germanium transistor wifi lna Ghz dB transistor

    germanium transistor ac 125

    Abstract: No abstract text available
    Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU730F OT343F JESD625-A germanium transistor ac 125

    BFU760F

    Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
    Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU760F OT343F JESD625-A BFU760F bfu760 dielectric resonator oscillator germanium transistor table Germanium power

    BFU730F

    Abstract: JESD625-A 555 ic Germanium power
    Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU730F OT343F JESD625-A BFU730F 555 ic Germanium power

    ON5088

    Abstract: germanium NPN germanium transistors NPN JESD625-A SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power
    Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF ON5088 OT343F JESD625-A ON5088 germanium NPN germanium transistors NPN SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power

    2.4 ghz transistor wifi amplifier

    Abstract: Germanium power
    Text: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		PDF BFU768F OT343F JESD625-A 2.4 ghz transistor wifi amplifier Germanium power

    SMO-14

    Abstract: SLG 2016 D 2SK26 2N42 N4 TAM 2N425 marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426
    Text: MIL-S-19500A1B EL See Section6 MILITARYSPECIFICATION SEMICONDUCTORDEVICE,TRANSISTOR,PNP, GERMANIUM,SWITCHING TYPSS 2N425,2Nb26, 2N42? 1. SCOPS 131 w.-. This specificationcovers the detail requirementsfor germanium PNP,“transietora for use in low-power switchingapplication


    Original     		PDF MIL-S-19500A1B( 2N425 2Nb26 -AO07 SMO-14 SLG 2016 D 2SK26 2N42 N4 TAM marking aaae 2n427 GERMANIUM SMALL SIGNAL TRANSISTORS 2N426

    marking s20 SMD Transistor

    Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power
    Text: 62 7  & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.


    Original     		PDF BFU730LX OT883C JESD625-A marking s20 SMD Transistor sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power

    MARKING HBT

    Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 MARKING HBT SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor

    SGA-1263

    Abstract: SGA-1263Z BY 356
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz EDS-100935 SGA-1263 SGA-1263Z BY 356

    trace code marking RFMD

    Abstract: SGA-1263 SGA-1263Z
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 trace code marking RFMD SGA-1263Z