NESG210719
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.
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NESG210719
NESG210719
NESG210719-A
NESG210719-T1
NESG210719-T1-A
PU10419EJ03V0DS
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NEC semiconductor
Abstract: NEC JAPAN marking NEC rf transistor nec npn rf NESG210719 NESG210719-T1 transistor RF S-parameters NEC D7
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.
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NESG210719
NESG210719-T1-A
NESG210719-T1
NESG210719-A
NEC semiconductor
NEC JAPAN
marking NEC rf transistor
nec npn rf
NESG210719
NESG210719-T1
transistor RF S-parameters
NEC D7
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NESG210719
Abstract: NESG210719-T1
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG210719 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • High breakdown voltage technology for SiGe Tr.
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NESG210719
NESG210719-A
NESG210719-T1-A
NESG210719-T1
NESG210719
NESG210719-T1
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NTE105
Abstract: TO36 package pnp germanium to36 Germanium power
Text: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
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NTE105
NTE105
TO36 package
pnp germanium to36
Germanium power
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marking r5s
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
Oct-22-2002
marking r5s
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80mAF
Abstract: 6069 marking
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Aug-16-2004
80mAF
6069 marking
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TA 8644
Abstract: BFP690 SCT595 GMA marking
Text: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5 For medium power amplifiers Maxim. available Gain Gma = 17 dB at 1.8 GHz 3 Gold metallization for high reliability 2 70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP690
VPW05980
SCT595
200mA
Oct-30-2002
TA 8644
BFP690
SCT595
GMA marking
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BFP650 noise figure
Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
curr26
Mar-27-2003
BFP650 noise figure
data sheet germanium diode
germanium transistors NPN
npn germanium
BFP650
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BFP650
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Jan-08-2004
BFP650
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gummel
Abstract: oscilators BFP650
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Oct-13-2003
gummel
oscilators
BFP650
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transistor 1T
Abstract: BFP650 equivalent
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
Jul-01-2003
transistor 1T
BFP650 equivalent
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PH marking code
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
PH marking code
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Untitled
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
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BFP650
Abstract: BGA420 T-25
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology
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BFP650
OT343
BFP650
BGA420
T-25
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MA7805
Abstract: Transistor 2n2307 K1202 2SK19GR 2SK19Y 2N3406 DG-34 transistor ns800 Dh-37 C682A
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD EFFECT TR A N SIST O R S 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
Voff-200uV.
NS8000
NS8003
OC740
Pt-500mW;
BVCBO-12V;
50-1500KC.
Voff-100uV;
MA7805
Transistor 2n2307
K1202
2SK19GR
2SK19Y
2N3406
DG-34 transistor
ns800
Dh-37
C682A
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Untitled
Abstract: No abstract text available
Text: CENTRAL SEMICONDUCTOR de Influa oooo 3M7 5 2N404A c e n tr a l SeEMcoEftdigctor Corp. Central Semiconductor Corp. Central Semiconductor Corp. Central Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11788 GERMANIUM TRANSISTOR JEDÉC TO - 5 CASE
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2N404A
2N404A
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MPS06
Abstract: 2N21 MP500 MP504 MP506 TNR*G MP501 MP502 MP505 Germanium power
Text: MP500 ri.ru MP502 GERMANIUM MP504 thru MP506 PN P germ anium power tr a n sisto r s for h igh-gain, high-power am p lifier and sw itching applications in high r e lia b ility ind u strial equipment. S T Y L E 1: P IN I. B ASE 3. C O L L E C T O R (C O N N E C T E D T O
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MP500
MP502
MP504
MP506
MP501
MP505
MP506
MPS06
2N21
TNR*G
MP502
Germanium power
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free transistor
Abstract: common base amplifier circuit transistor free MC 150 transistor transistor Common Base amplifier "MC 150" transistor germanium transistor pnp S PARAMETERS FOR TRANSISTOR TRANSISTOR ima Germanium Transistor
Text: EDISW A N MAZDA XAI03 I.F. T R A N SIST O R Germanium PN P Junction Type T E N T A T IV E G EN ER A L The XAI03 is a pnp junction type transistor suitable for use as an I.F. Amplifier at frequencies between 250 and 500 Kc/s where the closer parameter control of the X A IO I is
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XAI03
free transistor
common base amplifier circuit
transistor free
MC 150 transistor
transistor Common Base amplifier
"MC 150" transistor
germanium transistor pnp
S PARAMETERS FOR TRANSISTOR
TRANSISTOR ima
Germanium Transistor
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2N1536
Abstract: 2n1547 2N1544 2N1545 2n1540 2N1533 2N1537 2N1542 2n1541 2N1535
Text: TYPES 2N1529 THRU 2N1548 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS §m s* i s PS FOR HIGH-POWER SWITCHING g% AND AMPLIFIER APPUCATIONS §% M z o < m m ech an ical d a ta g These transistors are in precision welded, hermetically sealed enclosures.The mounting base provides an
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2N1529
2N1548
2N1536
2n1547
2N1544
2N1545
2n1540
2N1533
2N1537
2N1542
2n1541
2N1535
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free transistor
Abstract: germanium transistor pnp MC 150 transistor small signal germanium transistor transistor siemens ss germanium pnp pnp transistor oscillator circuit equivalent transistor rf Germanium Transistor S parameters of RF transistor
Text: E D I SW A N MAZDA XAI04 R.F. T R A N SIST O R Germanium PN P Junction Type T E N T A T IV E G EN ERA L The X A I0 4 is a pnp junction type transistor suitable for use as a frequency changer and or oscillator on the medium and long wave bands where the closer parameter control of
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XAI04
XAI02
free transistor
germanium transistor pnp
MC 150 transistor
small signal germanium transistor
transistor siemens ss
germanium pnp
pnp transistor oscillator circuit
equivalent transistor rf
Germanium Transistor
S parameters of RF transistor
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2N2659
Abstract: 2N2660 2N2662 2N2665 2N2664 2N2668 Germanium Transistor Texas Germanium 2N2667 c 2665 transistor
Text: TYPES 2N2659, 2N2660, 2N2661, 2N2662, 2N2663, 2N2664 2N2665, 2N2666, 2N2667, 2N2668, 2N2669, 2N2670 _P-N-P AUOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS m < * 2 c- 5 ¡1 5 50-, 70», or 9 0 -VOLT UNITS Guaranteed l« x at 85°C ° * 2 15 WATTS at 2 5 'C CASE TEMPERATURE
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2N2659,
2N2660,
2N2661,
2N2662,
2N2663,
2N2664
2N2665,
2N2666,
2N2667,
2N2668,
2N2659
2N2660
2N2662
2N2665
2N2668
Germanium Transistor
Texas Germanium
2N2667
c 2665 transistor
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2N2545
Abstract: 2N2547 2N25M 2N1042 2n2042 2N2560 2n2564 2N2565 2N2563 2N1045
Text: TYPES 2N1042, 2N1043, 2N1044, 2N1045 • 2N2560, 2N2561, 2N2562, 2N2563 • 2N2564, 2N2565, 2N2566, 2N2567 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS 90 a H sm sH a Guaranteed l CEx of 85 °C 4 0 -, 60-, 80-, or 100-V0LT UNITS 20 WATTS AT 25'C CASE TEMPERATURE
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2N1042,
2N1043,
2N1044,
2N1045
2N2560,
2N2561,
2N2562,
2N2563
2N2564,
2N2565,
2N2545
2N2547
2N25M
2N1042
2n2042
2N2560
2n2564
2N2565
2N2563
2N1045
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NKT677
Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers
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AC113
AC155
AC156
AC165
AC128
AC154
AC166
AC167
AC177
AD140
NKT677
NKT612
ORP12
sft353
GEX34
1/equivalent transistor ac127
OC171 equivalent
AD149
NKT275
ac128
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2N1038
Abstract: 2n2553 2N1040 2N1041 2n1039 2N2552 2N2557 ti 2N2553 2N2556 2N1036
Text: TYPES 2N1038, 2N1039, 2N1040, 2N1041 • 2N2552, 2N2553, 2N2554, 2N2555 • 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS M3 I 5s :0B Zssp Guaranteed 4 0 -, 60 -. 8 0 -, or lOO-VOLT UNITS 20 WATTS AT 259C CASE TEMPERATURE
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2N1038,
2N1039,
2N1040,
2N1041
2N2552,
2N2553,
2N2554,
2N2555
2N2556,
2N2557,
2N1038
2n2553
2N1040
2N1041
2n1039
2N2552
2N2557
ti 2N2553
2N2556
2N1036
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