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    GENERAL SEMICONDUCTOR MARKING UJ Search Results

    GENERAL SEMICONDUCTOR MARKING UJ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING UJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    Untitled

    Abstract: No abstract text available
    Text: FGB20N60SFD 600 V, 20 A Field Stop IGBT Features Applications • High Current Capability • Solar Inverter, UPS, Welder, PFC • Low Saturation Voltage: VCE sat = 2.2 V @ IC = 20 A General Description • High Input Impedance • Fast Switching : EOFF = 8 uJ/A


    Original     		PDF FGB20N60SFD O-263AB/D2-PAK

    FGAF40N60UFTU

    Abstract: No abstract text available
    Text: FGAF40N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF FGAF40N60UF FGAF40N60UF FGAF40N60UFTU

    FGA40N60UFD

    Abstract: FGA40N60
    Text: FGA40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF FGA40N60UFD FGA40N60UFD FGA40N60UFDTU FGA40N60

    Untitled

    Abstract: No abstract text available
    Text: FGP10N60UNDF 600 V, 10 A Short Circuit Rated IGBT Features General Description • • • • • Using advanced NPT IGBT technology, Fairchild ’s the NPT IGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC,


    Original     		PDF FGP10N60UNDF FGP10N60UNDF O-220

    0/PDP-2N-1000

    Abstract: No abstract text available
    Text: FGP90N30 300V, 90A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where low condution loss is essential.


    Original     		PDF FGP90N30 O-220 FGP90N30TU 0/PDP-2N-1000

    G2N60

    Abstract: G2N6 G2N60UF SGM2N60UF transistors sot-223 06a sGm2N60
    Text: SGM2N60UF Ultrafast IGBT General Description Features Fairchild's UF series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF SGM2N60UF OT-223 SGM2N60UF SGM2N60UFTF G2N60 G2N6 G2N60UF transistors sot-223 06a sGm2N60

    FGD3N60UNDF

    Abstract: 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING
    Text: 600V, 3A Short Circuit Rated IGBT Applications Features • Small Industrial Inverter • • • • • General Description • Home appliance inverter-driven appplication - Air Conditioner, Refrigerator, Dish Washer, FAN and Pump Short circuit rated 10us


    Original     		PDF FGD3N60UNDF FGD3N60UNDF O-252 600v 3a ultra fast recovery diode GENERAL SEMICONDUCTOR MARKING UJ 3a ultra fast diode UJ DIODE MARKING

    GENERAL SEMICONDUCTOR MARKING UJ

    Abstract: No abstract text available
    Text: FGAF40N60UFD Ultrafast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is


    Original     		PDF FGAF40N60UFD FGAF40N60UFD FGAF40N60UFDTU GENERAL SEMICONDUCTOR MARKING UJ

    120N30

    Abstract: No abstract text available
    Text: FGPF120N30 300V, 120A PDP IGBT Features General Description • • • • Employing Unified IGBT Technology, Fairchild's PWD series of IGBTs provides low conduction and switching loss. The PWD series offers the optimum solution for PDP applications where


    Original     		PDF FGPF120N30 FGPF120N30 O-220F FGPF120N30TU 120N30

    fdpf085n10a

    Abstract: No abstract text available
    Text: FDPF085N10A N-Channel PowerTrench MOSFET 100 V, 40 A, 8.5 mΩ Features General Description • RDS on = 6.5 mΩ ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDPF085N10A FDPF085N10A

    fgh30s

    Abstract: No abstract text available
    Text: FGH30S130P 1300 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching


    Original     		PDF FGH30S130P fgh30s

    Untitled

    Abstract: No abstract text available
    Text: FGA20S140P 1400 V, 20 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching


    Original     		PDF FGA20S140P

    Untitled

    Abstract: No abstract text available
    Text: FGA30S120P 1200 V, 30 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode Trench IGBTs offer superior conduction and switching performances for soft switching


    Original     		PDF FGA30S120P

    Untitled

    Abstract: No abstract text available
    Text: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching


    Original     		PDF FGA25S125P

    Untitled

    Abstract: No abstract text available
    Text: FGA15S125P 1250 V, 15 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for switching applications.


    Original     		PDF FGA15S125P

    FGD4536

    Abstract: FGD4536TM fgd453
    Text: FGD4536 360 V PDP Trench IGBT Features General Description • High Current Capability Using novel trench IGBT technology, Fairchild ’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and


    Original     		PDF FGD4536 FGD4536 O-252/D-PAK FGD4536TM fgd453

    Ss 8210

    Abstract: 045 83.2 TI YEAR OF MANUFACTURE toshiba ta 8210
    Text: TPC 8210 T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UjM O S - _ IT - N T S iT \S f t _ T PC8 2 1 0 — Unit: mm Lithium Ion Battery Applications Note Book PC Portable Equipments Applications •Low drain-source ON resistance


    OCR Scan     		PDF

    2n2907 TO-92

    Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337
    Text: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure


    OCR Scan     		PDF 2N2905 2N2907 2N4403 2N3702 O-237: TN2905 T0-237 2N3416 T0-92 2N3417 2n2907 TO-92 BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337

    TLP759F

    Abstract: IEC68 TLP759 VDE0109 VDE0884 TLP759F O DVE 0884
    Text: TOSHIBA TLP759 D4 TOSHIBA PHOTOCOUPLER TLP759(D4) ATTACHMENT : SPECIFICATIONS FOR VDE0884 OPTION : (D4) Types : TLP759, TLP759F Type designations for ‘Option : (D4)\ which are tested under VDE0884 requirements. Ex. : TLP759 (D4-0) Note : Use Toshiba standard type number for safety standard application.


    OCR Scan     		PDF TLP759 VDE0884 TLP759, TLP759F TLP759 TLP759F IEC68 VDE0109 TLP759F O DVE 0884

    2SA1362

    Abstract: A1362
    Text: 2SA1362 TO SH IBA 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • • + 0.5 2.5 —0.3 High DC Current Gain : hpE —120—400 Low Saturation Voltage


    OCR Scan     		PDF 2SA1362 -400m 2SA1362 A1362

    2SA1366

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1366 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1366 is a super mini silicon PNP epitaxial type transistor OUTLINE DRAWING n r +0-5 2-5 -0.3


    OCR Scan     		PDF 2SA1366 2SA1366 2SC3441. -600mA 150MHz SC-59 O-236

    2SC3441

    Abstract: 2SA1366
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3441 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3441 is a super mini silicon NPN epitaxial type transistor OUTLINE DRAWING 2-5 -0.3 designed with high collector current, high voltage.


    OCR Scan     		PDF 2SC3441 2SC3441 2SA1366. 600mA 150MHz SC-59 O-236 Taa25 2SA1366