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    GENERAL SEMICONDUCTOR MARKING SR Search Results

    GENERAL SEMICONDUCTOR MARKING SR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING SR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    5007

    Abstract: SRA2202 SRC1202 SUR551H
    Text: SUR551H Semiconductor NPN/PNP epitaxial planar Silicon Transistor Description • General purpose transistor Features • Both SRC1202 chip and SRA2202 chip in SOT-353 package • With built-in bias resistors Ordering Information Type NO. Marking SUR551H 51H


    Original     		PDF SUR551H SRC1202 SRA2202 OT-353 OT-353 KST-5007-000 -10mA -10mA, 5007 SUR551H

    gi diode

    Abstract: SOT-353 transistor sra2203 CHIP TRANSISTOR marking code GI 5007 src1203 SRA2203 SUR498H
    Text: SUR498H Semiconductor NPN/PNP epitaxial planar Silicon Transistor Description • General purpose transistor Features • Both SRC1203 chip and SRA2203 chip in SOT-353 package • With built-in bias resistors Ordering Information Type NO. Marking Package Code


    Original     		PDF SUR498H SRC1203 SRA2203 OT-353 OT-353 KST-5007-000 -10mA -10mA, gi diode SOT-353 transistor sra2203 CHIP TRANSISTOR marking code GI 5007 SUR498H

    SRA2207

    Abstract: SRC1204 SUR496H
    Text: SUR496H Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Description • General Purpose Transistor Features • Both SRC1204 chip and SRA2207 chip in SOT-353 package • With Built-in Bias Resistors Ordering Information Type NO. Marking SUR496H Package Code


    Original     		PDF SUR496H SRC1204 SRA2207 OT-353 OT-353 KST-5006-000 -10mA -10mA, SUR496H

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Semiconductors / Diodes / May 2015 /FF-DD-003-2015 From: Henry Chi, Product Marketing Sr. Manager Tel: +886 2 2911 3861 ext. 6533 office E-mail: henry.chi@vishay.com Subject: Information Notice – Product Marking DESCRIPTION OF CHANGE: Addition of cathode band on SMPCxxA series Transzorb TVS devices


    Original     		PDF /FF-DD-003-2015 SMPC10A-M3/86A A-M3/86A SMPC20A-M3/86A A-M3/87A SMPC11A-M3/86A SMPC20A-t NY11788 D-74072

    y1 marking code transistor

    Abstract: marking Y1 transistor SOT-353 transistor marking y1 SOT-353 marking y1 SRA2205 SUR499H transistor sot353
    Text: SUR499H Semiconductor Epitaxial Planar PNP Transistor Descriptions • General purpose application • Two SRA2205 chips in SOT-353 package Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process


    Original     		PDF SUR499H SRA2205 OT-353 OT-353 KST-5008-000 -10mA y1 marking code transistor marking Y1 transistor SOT-353 transistor marking y1 SOT-353 marking y1 SUR499H transistor sot353

    FCAS20DN60BB

    Abstract: SPM20BC Fairchild UL file IGBT fairchild ccd IGBT application note asymmetric bridge converter for srm
    Text: FCAS20DN60BB Smart Power Module for SRM Features General Description • 600V-20A 2-phase asymmetric bridge IGBT converter for SRM drive including control ICs for gate driving and protection FCAS20DN60BB is an advanced smart power module for SRM drive that Fairchild has newly developed and designed to provide very compact and high performance SRM motor drives


    Original     		PDF FCAS20DN60BB 00V-20A FCAS20DN60BB SPM20BC Fairchild UL file IGBT fairchild ccd IGBT application note asymmetric bridge converter for srm

    Untitled

    Abstract: No abstract text available
    Text: 05172 SR70 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The SR70 is an ultra low capacitance steering diode array. Designed for protection against Electrostatic Discharge ESD , Electrical Fast Transients (EFT) and secondary lightning threats, this device is ideal for use in high-speed signal


    Original     		PDF OT-143

    TC75W60FK

    Abstract: TC75W60FU
    Text: TC75W60FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC75W60FU, TC75W60FK Dual Operational Amplifier TC75W60FU Features • High slew rate • Single and dual power Supply operations are possible. : VDD = ±0.9 to 3.5 V or 1.8 to 7 V : SR VDD = 3 V = 5.1 V/ s (typ.)


    Original     		PDF TC75W60FU/FK TC75W60FU, TC75W60FK TC75W60FU TC75W60FK TC75W60FU

    KST-J023-000

    Abstract: Marking JW IC marking jw SRC1211 SUR541EF
    Text: SUR541EF Semiconductor NPN Epitaxial Planar Silicon Transistor Description • Digital transistor Features • Two SRC1211 chips in SOT-563F package • With built-in bias resistors Ordering Information Type NO. SUR541EF Marking JW Package Code SOT-563F Outline Dimensions


    Original     		PDF SUR541EF SRC1211 OT-563F OT-563F KST-J023-000 KST-J023-000 Marking JW IC marking jw SUR541EF

    Untitled

    Abstract: No abstract text available
    Text: SRA2211M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF SRA2211M O-92M KSR-I018-001

    SRA2205

    Abstract: SUR532H
    Text: SUR532H Semiconductor Epitaxial Planar Type PNP Silicon Transistor Description • Digital transistor Features • Two SRA2205 chips in SOT-353 package • With built-in bias resistors Ordering Information Type NO. SUR532H Marking 32H Package Code SOT-353


    Original     		PDF SUR532H SRA2205 OT-353 OT-353 KST-5019-001 SUR532H

    Untitled

    Abstract: No abstract text available
    Text: SRC1210M Semiconductor NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF SRC1210M O-92M KSR-I007-001

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE |V/|C=RON MT5LC512K8C3 512K X 8 SRAM 512Kx 8 SRAM WITH OUTPUT ENABLE • High speed: 20, 25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3Vpower supply • Easy memory expansion with CE and OE options


    OCR Scan     		PDF MT5LC512K8C3 512Kx 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT5LC1M4C3 1 MEG X 4 SRAM |V |IC = R O N 1 MEG X 4 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 20,25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options


    OCR Scan     		PDF 32-Pin 55utputs

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT5C1M4A1 1 MEG X 4 SRAM SRAM 1 MEG X 4 SRAM WITH OUTPUT ENABLE FEATURES • H igh speed: 20,25,35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply _ • Easy memory expansion with CE and OE options


    OCR Scan     		PDF 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE SRAM 512Kx 8 SRAM FEATURES • High speed: 20,25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible


    OCR Scan     		PDF 512Kx 32-Pin MTSC512K8A1 MT5C512K8A1

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE SRAM 512Kx 8 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 20,25,35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible


    OCR Scan     		PDF MT5C512K8A1 512Kx 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT5LC1M4C3 1 MEG X 4 SRAM M IC R O N 1 MEG X 4 SRAM WITH OUTPUT ENABLE • High speed: 20,25,35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options


    OCR Scan     		PDF 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY IN C SSE D b l U S M Ì 0 0 D 3 b lb lis • FIRN ADVANCE MT5LC512K8C3 512K X B SRAM M IC R O N 512Kx 8 SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT (Top View • High speed: 2 0,25,35 and 55ns • High-performance, low-power, CMOS double-metal


    OCR Scan     		PDF MT5LC512K8C3 512Kx MTCLC612K8C3

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 1 MEG X 4 SRAM SRAM WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 20,25, 35 and 55ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options


    OCR Scan     		PDF 32-Pin

    a5433

    Abstract: No abstract text available
    Text: ADVANCE SRAM 256Kx 16 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 20,2 5 and 35ns • High-performance, low-power, CMOS double-metal process • Multiple center power and ground pins • Single +5V ±10% power supply_ • Easy memory expansion with CE and OE options


    OCR Scan     		PDF MT5C256K16B2 256Kx 44-Pin a5433

    marking b7t

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b7E T> • b lllS M R OOOIbSO ÔT7 ■ MRN MICRON 64K SRAM MODULE X MT8S6432 32 SRAM MODULE 64K X 32 SRAM FEATURES High speed: 15*, 20,25,30 and 35ns High-performance, low-power CMOS process _ Single +5V +10% power supply Easy memory expansion with CE and OE functions


    OCR Scan     		PDF MT8S6432 64-Pin marking b7t