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    GENERAL SEMICONDUCTOR MARKING SM Search Results

    GENERAL SEMICONDUCTOR MARKING SM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING SM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VISHAY MARKING CODE

    Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
    Text: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band


    Original     		DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600ï P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 VISHAY MARKING CODE Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S PDF

    GENERAL SEMICONDUCTOR MARKING SJ SMA

    Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number


    Original     		DO-204AL/DO-204AC/DO-201AD/GP20/1 5KE/P600 P6KE22 GP15M 0621X 5KE15A 1N6275A SB340 GENERAL SEMICONDUCTOR MARKING SJ SMA VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X PDF

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2221 2N2222 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER


    Original     		2N2221 2N2222 2N2221 2N2222 24-July 150mA PDF

    2n2222

    Abstract: 2n2222 npn 2n2221 2N2221-2N2222 npn 2n2222 transistor 2n2222 npn transistor general purpose 2n2222 npn switching transistor power transistor 2n2222 2N2222 hfe
    Text: 2N2221 2N2222 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221, 2N2222 types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER


    Original     		2N2221 2N2222 2N2221, 100MHz 100kHz 30-January 2n2222 npn 2N2221-2N2222 npn 2n2222 transistor 2n2222 npn transistor general purpose 2n2222 npn switching transistor power transistor 2n2222 2N2222 hfe PDF

    2N4036

    Abstract: 2n4037 2N40* Central
    Text: 2N4036 2N4037 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar PNP Silicon Transistors designed for small signal, medium power, general purpose industrial applications. MARKING: FULL PART NUMBER


    Original     		2N4036 2N4037 2N4036, 150mA 500mA 20MHz 2N4036 2n4037 2N40* Central PDF

    CW-75

    Abstract: 2N2222A marking code 2N2222A marking
    Text: 2N2221A 2N2222A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A and 2N2222A types are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER


    Original     		2N2221A 2N2222A 150mA, CW-75 2N2222A marking code 2N2222A marking PDF

    2N4410

    Abstract: 2N4410 Transistor Transistor marking code S
    Text: 2N4410 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4410 is a small signal NPN silicon transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER


    Original     		2N4410 2N4410 20MHz 18-October 2N4410 Transistor Transistor marking code S PDF

    smd code marking HD

    Abstract: schottky 400v SMD Marking Code 10A MARKING CODE VF Smd marking code SMD MARKING CODE 50A GENERAL SEMICONDUCTOR MARKING smc 10A Schottky bridge marking code N CMSH1-100M
    Text: Discrete Semiconductor Sample Kit SMD Rectifier Central Semiconductor Sample Kits provide designers with the discrete semiconductor devices ideally suited for the latest design challenges. The SMD Rectifier Sample Kit includes a variety of medium power devices suitable for general purpose full-wave,


    Original     		CBRHD-10 500mA CBD10 CBR1-D100S CBR1F-D040S 200ns CBR1U-D020S 5310M CMR5U-08 100ns smd code marking HD schottky 400v SMD Marking Code 10A MARKING CODE VF Smd marking code SMD MARKING CODE 50A GENERAL SEMICONDUCTOR MARKING smc 10A Schottky bridge marking code N CMSH1-100M PDF

    CMR3-06

    Abstract: C302 C304 C306 c306 diode C310 CMR3-02 CMR3-04 CMR3-10 TR13
    Text: Central CMR3-02 CMR3-04 CMR3-06 CMR3-10 TM Semiconductor Corp. GENERAL PURPOSE RECTIFIER 3.0 AMP, 200 THRU 1000 VOLTS SMC CASE FEATURES: • LOW COST • SPECIAL SELECTIONS AVAILABLE • HIGH RELIABILITY • SUPERIOR LOT TO LOT CONSISTENCY • GLASS PASSIVATED CHIP


    Original     		CMR3-02 CMR3-04 CMR3-06 CMR3-10 26-September CMR3-06 C302 C304 C306 c306 diode C310 CMR3-02 CMR3-04 CMR3-10 TR13 PDF

    TRANSISTOR SMD MARKING CODE

    Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
    Text: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose


    Original     		100mA 200mA OD-323 CMDSH05-4 500mA OT-23 TRANSISTOR SMD MARKING CODE 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE PDF

    JESD 201 class 1A

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes Diodes - TO-277A SMPC Package for Smartphone Chargers V10PN50 and V15PN50 50 V TMBS Rectifiers for Smartphone Chargers Feature Industry-Low VF of 10 A and 15 A KEY BENEFITS • High current density


    Original     		O-277A V10PN50 V15PN50 VMN-PT0378-1308 91000TO JESD 201 class 1A PDF

    CMLT8099

    Abstract: No abstract text available
    Text: Central CMLT8099 SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099 consists of two individual, isolated 8099 NPN silicon transistors, manufactured by the epitaxial planar process and epoxy


    Original     		CMLT8099 CMLT8099 OT-563 500mA 100mA, 100mA 100MHz 19-November PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N485B 1N485B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg


    Original     		1N485B DO-35 1N485B 1N485BTR PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 400mW SOD-123 SURFACE MOUNT Green Product Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation Value Units


    Original     		400mW OD-123 DB-100 PDF

    F1M SOD-123

    Abstract: Diode marking CODE 1M sod-123 1N4148W SOD123 D3 MARKING CODE diode sod123 F1m Device marking 1m diode SOD-123 uA 072 marking 1M SOd123 4148 SOD-123 SOD-123 4148 1N4148W
    Text: SEMICONDUCTOR 400mW SOD-123 SURFACE MOUNT Green Product Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter PD Power Dissipation Value Units


    Original     		400mW OD-123 F1M SOD-123 Diode marking CODE 1M sod-123 1N4148W SOD123 D3 MARKING CODE diode sod123 F1m Device marking 1m diode SOD-123 uA 072 marking 1M SOd123 4148 SOD-123 SOD-123 4148 1N4148W PDF

    2SA1618

    Abstract: 2SC4207
    Text: 2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4207 Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120~700 •


    Original     		2SC4207 2SA1618 2SA1618 2SC4207 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . AND TEC I INNOVAT O L OGY SMC3K Series N HN Diodes O 19 62-2012 Diodes - TransZorb Bi-Directional TVS Surface-Mount Bi-Directional Transient Voltage Suppressors Feature High Surge Capability to 3 kW in SMC DO-214AB Package


    Original     		DO-214AB AEC-Q101 SMC3K22CA-M3/9A SMC3K22CAHM3/57 SMC3K22CAHM3/9A VMN-PT0344-1212 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN2C01FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C01FE Audio Frequency General Purpose Amplifier Applications z Small package (dual type) z High voltage and high current : VCEO = 50V, IC = 150mA (max) z High hFE : hFE = 120~400 z Excellent hFE linearity


    Original     		HN2C01FE 150mA PDF

    marking 1af

    Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
    Text: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)


    Original     		SMB10J5 DO-214AA 50mVp-p 11-Mar-04 marking 1af marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW PDF

    HN1A01FU

    Abstract: No abstract text available
    Text: HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN1A01FU Unit: mm Audio Frequency General Purpose Amplifier Applications l Small package (Dual type) l High voltage and high current : VCEO =−50V, IC =−150mA (max) l High hFE: hFE = 120~400


    Original     		HN1A01FU -150mA HN1A01FU PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1618 Audio Frequency General Purpose Amplifier Applications • Unit: mm Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE: hFE = 120~400


    Original     		2SA1618 2SC4207 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1873 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1873 Audio Frequency General Purpose Amplifier Applications • Unit: mm Small package (dual type) • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • High hFE •


    Original     		2SA1873 2SC4944 PDF

    HN1C01FU

    Abstract: No abstract text available
    Text: HN1C01FU TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C01FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity


    Original     		HN1C01FU 150mA HN1C01FU PDF