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    GENERAL SEMICONDUCTOR MARKING 62A Search Results

    GENERAL SEMICONDUCTOR MARKING 62A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING 62A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    Untitled

    Abstract: No abstract text available
    Text: FDB13AN06A0 / FDP13AN06A0 N-Channel PowerTrench MOSFET 60V, 62A, 13.5mΩ Features Applications • r DS ON = 11.5mΩ (Typ.), VGS = 10V, ID = 62A • Motor Load Control • Qg(tot) = 22nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge


    Original     		PDF FDB13AN06A0 FDP13AN06A0 O-220AB O-263AB FDP13AN06A0

    TRANSISTOR SMD MARKING CODE 1BW

    Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG

    Untitled

    Abstract: No abstract text available
    Text: 1.5SMC6.8A thru 1.5SMC540CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


    Original     		PDF 5SMC540CA J-STD-020C, 2002/95/EC 2002/96/EC DO-214AB 08-Apr-05

    JESD22-B102D

    Abstract: J-STD-002B P6SMB10A P6SMB10CA
    Text: P6SMB Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 600 W peak pulse power capability with a


    Original     		PDF DO-214AA J-STD-020C, 08-Apr-05 JESD22-B102D J-STD-002B P6SMB10A P6SMB10CA

    Untitled

    Abstract: No abstract text available
    Text: P6SMB6.8A thru P6SMB540A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


    Original     		PDF P6SMB540A DO-214AA J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05

    FDP2614

    Abstract: No abstract text available
    Text: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDP2614 FDP2614 O-220

    Untitled

    Abstract: No abstract text available
    Text: P6SMBxxxAT3 Series Zener Transient Voltage Suppressors GENERAL DATA IS APPLICABLE TO ALL SERIES IN THIS GROUP The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener


    Original     		PDF r14525

    1.5SMC43A

    Abstract: 420 6V8A
    Text: 1.5SMC Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC PRIMARY CHARACTERISTICS VBR uni-directional 6.8 V to 540 V VBR bi-directional 6.8 V to 220 V PPPM 1500 W PD 6.5 W IFSM (uni-directional only)


    Original     		PDF J-STD-020C, 2002/95/EC 2002/96/EC 18-Jul-08 1.5SMC43A 420 6V8A

    JESD22-B102D

    Abstract: J-STD-002B P6SMB10A P6SMB10CA
    Text: P6SMB Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 600 W peak pulse power capability with a


    Original     		PDF DO-214AA J-STD-020C, 08-Apr-05 JESD22-B102D J-STD-002B P6SMB10A P6SMB10CA

    JESD22-B102D

    Abstract: J-STD-002B marking CODE 62A general
    Text: 1.5SMC Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC MAJOR RATINGS AND CHARACTERISTICS V(BR) Unidirectional 6.8 V to 540 V V(BR) Bidirectional 6.8 V to 220 V PPPM 1500 W PD 6.5 W IFSM (Unidirectional only)


    Original     		PDF DO-214AB 08-Apr-05 JESD22-B102D J-STD-002B marking CODE 62A general

    51C MARKING code

    Abstract: DEVICE MARKING CODE 150A marking CODE 91A diode 6v8a marking code 27c type marking code 30C J-STD-002B JESD22-B102D
    Text: 1.5SMC Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC MAJOR RATINGS AND CHARACTERISTICS V(BR) Unidirectional 6.8 V to 540 V V(BR) Bidirectional 6.8 V to 220 V PPPM 1500 W PD 6.5 W IFSM (Unidirectional only)


    Original     		PDF DO-214AB 08-Apr-05 51C MARKING code DEVICE MARKING CODE 150A marking CODE 91A diode 6v8a marking code 27c type marking code 30C J-STD-002B JESD22-B102D

    Untitled

    Abstract: No abstract text available
    Text: P6SMB Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a


    Original     		PDF DO-214AA J-STD-020C, 08-Apr-05

    CA62

    Abstract: JESD22-B102 J-STD-002 DEVICE MARKING CODE 150A
    Text: 1.5SMC Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC DO-214AB 150lectual 18-Jul-08 CA62 JESD22-B102 J-STD-002 DEVICE MARKING CODE 150A

    JESD22-B102

    Abstract: J-STD-002 P6SMB10A P6SMB10CA P6SMB11A P6SMB12A
    Text: P6SMB Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a


    Original     		PDF J-STD-020, 2002/95/EC 2002/96/EC DO-214AA 18-Jul-08 JESD22-B102 J-STD-002 P6SMB10A P6SMB10CA P6SMB11A P6SMB12A

    Untitled

    Abstract: No abstract text available
    Text: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDB2614

    Fairchild Semiconductor DS-513

    Abstract: No abstract text available
    Text: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDP2614 O-220 Fairchild Semiconductor DS-513

    JESD22-B102D

    Abstract: J-STD-002B P4SMA10CA P4SMA540A
    Text: P4SMA6.8A thru P4SMA540A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional 400 W


    Original     		PDF P4SMA540A J-STD-020C, 2002/95/EC 2002/96/EC DO-214AC 08-Apr-05 JESD22-B102D J-STD-002B P4SMA10CA P4SMA540A

    JESD22-B102D

    Abstract: J-STD-002B P4SMA10A P4SMA10CA P4SMA11A
    Text: P4SMA Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional 400 W


    Original     		PDF J-STD-020C, 2002/95/EC 2002/96/EC DO-214AC 08-Apr-05 JESD22-B102D J-STD-002B P4SMA10A P4SMA10CA P4SMA11A

    Untitled

    Abstract: No abstract text available
    Text: P4SMA Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional 400 W


    Original     		PDF J-STD-020C, 2002/95/EC 2002/96/EC 18-Jul-08

    JESD22-B102D

    Abstract: J-STD-002B P4SMA10A P4SMA10CA P4SMA11A GENERAL SEMICONDUCTOR MARKING 36A SMA
    Text: P4SMA series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional 400 W


    Original     		PDF J-STD-020C, 2002/95/EC 2002/96/EC DO-214AC 08-Apr-05 JESD22-B102D J-STD-002B P4SMA10A P4SMA10CA P4SMA11A GENERAL SEMICONDUCTOR MARKING 36A SMA

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28