B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: FDB13AN06A0 / FDP13AN06A0 N-Channel PowerTrench MOSFET 60V, 62A, 13.5mΩ Features Applications • r DS ON = 11.5mΩ (Typ.), VGS = 10V, ID = 62A • Motor Load Control • Qg(tot) = 22nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge
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FDB13AN06A0
FDP13AN06A0
O-220AB
O-263AB
FDP13AN06A0
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TRANSISTOR SMD MARKING CODE 1BW
Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-0710
TRANSISTOR SMD MARKING CODE 1BW
SmD TRANSISTOR 1bw
transistor SMD 5BW
TRANSISTOR SMD MARKING CODE 1AM
5bw smd
smd code marking 5bw
KL SN 102 94v-0
smd transistor marking 3bw
smd transistor 1AM
yx 801
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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Untitled
Abstract: No abstract text available
Text: 1.5SMC6.8A thru 1.5SMC540CA Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional
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5SMC540CA
J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AB
08-Apr-05
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PDF
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JESD22-B102D
Abstract: J-STD-002B P6SMB10A P6SMB10CA
Text: P6SMB Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 600 W peak pulse power capability with a
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DO-214AA
J-STD-020C,
08-Apr-05
JESD22-B102D
J-STD-002B
P6SMB10A
P6SMB10CA
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Untitled
Abstract: No abstract text available
Text: P6SMB6.8A thru P6SMB540A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional
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P6SMB540A
DO-214AA
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
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PDF
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FDP2614
Abstract: No abstract text available
Text: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDP2614
FDP2614
O-220
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Untitled
Abstract: No abstract text available
Text: P6SMBxxxAT3 Series Zener Transient Voltage Suppressors GENERAL DATA IS APPLICABLE TO ALL SERIES IN THIS GROUP The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
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r14525
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1.5SMC43A
Abstract: 420 6V8A
Text: 1.5SMC Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC PRIMARY CHARACTERISTICS VBR uni-directional 6.8 V to 540 V VBR bi-directional 6.8 V to 220 V PPPM 1500 W PD 6.5 W IFSM (uni-directional only)
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J-STD-020C,
2002/95/EC
2002/96/EC
18-Jul-08
1.5SMC43A
420 6V8A
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JESD22-B102D
Abstract: J-STD-002B P6SMB10A P6SMB10CA
Text: P6SMB Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 600 W peak pulse power capability with a
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Original
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DO-214AA
J-STD-020C,
08-Apr-05
JESD22-B102D
J-STD-002B
P6SMB10A
P6SMB10CA
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JESD22-B102D
Abstract: J-STD-002B marking CODE 62A general
Text: 1.5SMC Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC MAJOR RATINGS AND CHARACTERISTICS V(BR) Unidirectional 6.8 V to 540 V V(BR) Bidirectional 6.8 V to 220 V PPPM 1500 W PD 6.5 W IFSM (Unidirectional only)
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DO-214AB
08-Apr-05
JESD22-B102D
J-STD-002B
marking CODE 62A general
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51C MARKING code
Abstract: DEVICE MARKING CODE 150A marking CODE 91A diode 6v8a marking code 27c type marking code 30C J-STD-002B JESD22-B102D
Text: 1.5SMC Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC MAJOR RATINGS AND CHARACTERISTICS V(BR) Unidirectional 6.8 V to 540 V V(BR) Bidirectional 6.8 V to 220 V PPPM 1500 W PD 6.5 W IFSM (Unidirectional only)
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DO-214AB
08-Apr-05
51C MARKING code
DEVICE MARKING CODE 150A
marking CODE 91A
diode 6v8a
marking code 27c
type marking code 30C
J-STD-002B
JESD22-B102D
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Untitled
Abstract: No abstract text available
Text: P6SMB Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a
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DO-214AA
J-STD-020C,
08-Apr-05
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CA62
Abstract: JESD22-B102 J-STD-002 DEVICE MARKING CODE 150A
Text: 1.5SMC Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
DO-214AB
150lectual
18-Jul-08
CA62
JESD22-B102
J-STD-002
DEVICE MARKING CODE 150A
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PDF
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JESD22-B102
Abstract: J-STD-002 P6SMB10A P6SMB10CA P6SMB11A P6SMB12A
Text: P6SMB Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
DO-214AA
18-Jul-08
JESD22-B102
J-STD-002
P6SMB10A
P6SMB10CA
P6SMB11A
P6SMB12A
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PDF
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Untitled
Abstract: No abstract text available
Text: FDB2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDB2614
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Fairchild Semiconductor DS-513
Abstract: No abstract text available
Text: FDP2614 N-Channel PowerTrench MOSFET 200 V, 62 A, 27 mΩ Features General Description • RDS on = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining
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FDP2614
O-220
Fairchild Semiconductor DS-513
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PDF
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JESD22-B102D
Abstract: J-STD-002B P4SMA10CA P4SMA540A
Text: P4SMA6.8A thru P4SMA540A Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional 400 W
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P4SMA540A
J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AC
08-Apr-05
JESD22-B102D
J-STD-002B
P4SMA10CA
P4SMA540A
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PDF
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JESD22-B102D
Abstract: J-STD-002B P4SMA10A P4SMA10CA P4SMA11A
Text: P4SMA Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional 400 W
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Original
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J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AC
08-Apr-05
JESD22-B102D
J-STD-002B
P4SMA10A
P4SMA10CA
P4SMA11A
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PDF
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Untitled
Abstract: No abstract text available
Text: P4SMA Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional 400 W
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Original
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J-STD-020C,
2002/95/EC
2002/96/EC
18-Jul-08
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PDF
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JESD22-B102D
Abstract: J-STD-002B P4SMA10A P4SMA10CA P4SMA11A GENERAL SEMICONDUCTOR MARKING 36A SMA
Text: P4SMA series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional 400 W
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Original
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J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AC
08-Apr-05
JESD22-B102D
J-STD-002B
P4SMA10A
P4SMA10CA
P4SMA11A
GENERAL SEMICONDUCTOR MARKING 36A SMA
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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OCR Scan
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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