Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GENERAL SEMICONDUCTOR DIODE MARKING 49 Search Results

    GENERAL SEMICONDUCTOR DIODE MARKING 49 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM2195C2A333JE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    GENERAL SEMICONDUCTOR DIODE MARKING 49 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored


    Original     		FDP150N10 PDF

    FDP150N10

    Abstract: No abstract text available
    Text: FDP150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored


    Original     		FDP150N10 FDP150N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 16 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDI150N10 FDI150N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored


    Original     		FDP150N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored


    Original     		FDB150N10 FDB150N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		FDB66N15 FDB66N15 FDB66N15TM PDF

    52N20

    Abstract: fdb fairchild FDB52N20
    Text: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


    Original     		FDB52N20 FDB52N20 FDB52N20TM 52N20 fdb fairchild PDF

    FDP150N10

    Abstract: No abstract text available
    Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP150N10 O-220 FDP150N10 PDF

    FDB150N10

    Abstract: marking 49a
    Text: FDB150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDB150N10 FDB150N10 marking 49a PDF

    FDMS7658

    Abstract: No abstract text available
    Text: FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		FDMS7658AS FDMS7658AS FDMS7658 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		FDMS7658AS FDMS7658AS PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS7658AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description ̈ Max rDS on = 1.9 mΩ at VGS = 10 V, ID = 28 A The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		FDMS7658AS FDMS7658AS PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDP150N10 O-220 FDP150N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 mΩ Features General Description The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		FDMS0309AS FDMS0309AS PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS8660AS N-Channel tm PowerTrench SyncFETTM 30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		FDMS8660AS FDMS8660AS PDF

    FDMS8660AS

    Abstract: 4410 mosfet fairchild top marking fdms8660
    Text: FDMS8660AS N-Channel PowerTrench SyncFET TM tm  30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		FDMS8660AS FDMS8660AS 4410 mosfet fairchild top marking fdms8660 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDI150N10 O-262 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mΩ Features General Description „ Max rDS on = 2.5 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC8321L FDMC8321L PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC8321L N-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mΩ Features General Description ̈ Max rDS on = 2.5 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC8321L PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC7582 FDMC7582 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC7582 FDMC7582 PDF

    FDI150N10

    Abstract: No abstract text available
    Text: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDI150N10 O-262 FDI150N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description ̈ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node


    Original     		FDMC7582 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features „ Dual Cool General Description TM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®


    Original     		PDF