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    GENERAL SEMICONDUCTOR DIODE 400 Search Results

    GENERAL SEMICONDUCTOR DIODE 400 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR DIODE 400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode 1 Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


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    Abstract: No abstract text available
    Text: 1N4454 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g


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    PDF 1N4454 DO-204AH DO-35 150mA F2/10K 50K/box F3/10K 50K/box junct25

    bat41 600

    Abstract: bat41 Diode BAT41
    Text: BAT41 Vishay Semiconductors formerly General Semiconductor Schottky Diode DO-204AH DO-35 Glass Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage,


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    PDF BAT41 DO-204AH DO-35 D7/10K 20K/box D8/10K 20K/box BAT41 bat41 600 Diode BAT41

    bat41 600

    Abstract: BAT41 Diode BAT41 DO-204AH LL41
    Text: BAT41 Vishay Semiconductors formerly General Semiconductor Schottky Diode DO-204AH DO-35 Glass Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage,


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    PDF BAT41 DO-204AH DO-35 D7/10K 20K/box D8/10K bat41 600 BAT41 Diode BAT41 DO-204AH LL41

    KTX411T

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTX411T EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 ᴌIncluding two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A


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    PDF KTX411T KTX411T

    KTX311T

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTX311T EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 ᴌIncluding two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A


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    PDF KTX311T KTX311T

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    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTX311T EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES ・Including two TR, Diode devices in TSV. 1 DIM MILLIMETERS _ 0.2 A


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    PDF KTX311T

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    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTX311T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 Including two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A 2.9 +


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    PDF KTX311T

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    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTX411T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. E B FEATURES 1 Including two TR, Diode devices in TSV. DIM MILLIMETERS _ 0.2 A 2.9 +


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    PDF KTX411T

    1bl3

    Abstract: KTX402U
    Text: SEMICONDUCTOR KTX402U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. B B1 FEATURES ・Including two TR, Diode devices in USV. 1 5 A 2 C ・Simplify circuit design.


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    PDF KTX402U 270Hz 1bl3 KTX402U

    SOT-23 J1C

    Abstract: No abstract text available
    Text: SDS19 Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J1C □ SDS19 3 1 1. Anode


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    PDF OT-23 SDS19 OT-23 KSD-D5C025-001 SOT-23 J1C

    KTX301U

    Abstract: TRANSISTOR A1 TR
    Text: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. C A A1 2 C ᴌSimplify circuit design.


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    PDF KTX301U 100mA KTX301U TRANSISTOR A1 TR

    transistor data cd

    Abstract: KTX401U diode DB 3 C TRANSISTOR A1 TR
    Text: SEMICONDUCTOR TECHNICAL DATA KTX401U EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ᴌIncluding two TR, Diode devices in USV. C A A1 2 C ᴌSimplify circuit design.


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    PDF KTX401U 100mA transistor data cd KTX401U diode DB 3 C TRANSISTOR A1 TR

    SDS21WK

    Abstract: No abstract text available
    Text: SDS21WK Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Device Marking Code 1 Package J2K □ SDS21WK 3 1 1 2


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    PDF OT-23 SDS21WK OT-23 KSD-D5C028-001 SDS21WK

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    Abstract: No abstract text available
    Text: SDS19WM Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J1M □ SDS19WM 3 1 1 2


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    PDF OT-23 SDS19WM OT-23 KSD-D5C032-000

    SDS19WA

    Abstract: No abstract text available
    Text: SDS19WA Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J1A □ SDS19WA 3 1 2 3


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    PDF OT-23 SDS19WA OT-23 KSD-D5C030-000 SDS19WA

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    Abstract: No abstract text available
    Text: SDS20WM Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J3M □ SDS20WM 3 1 1 2


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    PDF OT-23 SDS20WM OT-23 KSD-D5C035-000

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    Abstract: No abstract text available
    Text: SDS21WA Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J2A □ SDS21WA 3 1 3 1


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    PDF OT-23 SDS21WA OT-23 KSD-D5C027-001

    MV104 "direct replacement"

    Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.


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    PDF MV104) MV104 226AA) Curren218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV104 "direct replacement" 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION

    Untitled

    Abstract: No abstract text available
    Text: SDS20D Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOD-323 y For general purpose switching application 1 Ordering Information Device 2 Marking Code 1 Package J3 □ SDS20D 1. Anode


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    PDF SDS20D OD-323 KSD-D6C024-000

    SDS20WK

    Abstract: No abstract text available
    Text: SDS20WK Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOT-23 y For general purpose switching application Ordering Information Marking Code 1 Device Package J3K □ SDS20WK 3 1 2 1


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    PDF OT-23 SDS20WK OT-23 KSD-D5C034-000 SDS20WK

    marking A1 TRANSISTOR

    Abstract: COB diode H4B1 KTX401U Transistor hFE CLASSIFICATION Marking CE
    Text: SEMICONDUCTOR KTX401U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ・Including two TR, Diode devices in USV. 1 5 A 2 C ・Simplify circuit design.


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    PDF KTX401U 100mA marking A1 TRANSISTOR COB diode H4B1 KTX401U Transistor hFE CLASSIFICATION Marking CE

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    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTX401U EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two TR, Diode devices in USV. (Ultra Super mini type with 5 leads)


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    PDF KTX401U 100mA

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    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Including two TR, Diode devices in USV. (Ultra Super mini type with 5 leads)


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    PDF KTX301U 100mA