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    GENERAL PURPOSE PNP TRANSISTOR HAVING MORE THAN Search Results

    GENERAL PURPOSE PNP TRANSISTOR HAVING MORE THAN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL PURPOSE PNP TRANSISTOR HAVING MORE THAN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    617-12

    Abstract: 61712
    Text: Publication 26005† GENERAL INFORMATION IC OUTPUTS – TERMS & DEFINITIONS These terms and their definitions are taken from EIA/JEDEC Standard No. 99-A, Terms, Definitions, and Letter Symbols for Microelectronic Devices, clause 2.2.6, Types of Outputs. All the outputs described here can be categorized as either bipolar or unipolar. Figures 1 and 2 show the


    Original     		PDF

    617-12

    Abstract: No abstract text available
    Text: IC OUTPUTS – TERMS & DEFINITIUONS These terms and their definitions are taken from EIA/JEDEC Standard No. 99-A, Terms, Definitions, and Letter Symbols for Microelectronic Devices, clause 2.2.6, Types of Outputs. All the outputs described here can be categorized as either bipolar or unipolar. Figures 1 and 2 show the


    Original     		PDF

    pioneer mosfet audio amp ic

    Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
    Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great


    Original     		PDF 2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114

    5 digit led display

    Abstract: head mounted display 50LH50
    Text: LED Type Optical Displacement Sensor LM10 HL-C1 LH-50 Light / Reflective Type MEASUREMENT SENSORS LH-50 SERIES LD LA-300 LA Light / Thru-beam Type HL-T1 Minute displacements measured with high precision by red ⅐⅐⅐ LED beam Conforming to EMC Directive


    Original     		PDF LH-50 LA-300 c082-2 5 digit led display head mounted display 50LH50

    2SA1213Y

    Abstract: 2SA1213-Y S-816 S-816A25AMC-BAA-T2 S-816A30AMC-BAF-T2 S-816A33AMC-BAI-T2 S-816A37AMC-BAM-T2 S-816A40AMC-BAP-T2 S-816A50AMC-BAZ-T2 TOSHIBA 2SA1213Y
    Text: Contents Features. 1 Block Diagram . 1 Applications . 1 Selection Guide. 2


    Original     		PDF 11S814005 2SA1213Y 2SA1213-Y S-816 S-816A25AMC-BAA-T2 S-816A30AMC-BAF-T2 S-816A33AMC-BAI-T2 S-816A37AMC-BAM-T2 S-816A40AMC-BAP-T2 S-816A50AMC-BAZ-T2 TOSHIBA 2SA1213Y

    SF2-EH48-N

    Abstract: ossd output Ambient Light Sensor SF2-EH32-N h48 diode SPECIFICATIONS through beam sensor circuit diagram FC-SF2-H12 SF2E 780 AC h48 signal diode
    Text: SERIES 20mm Beam Pitch Global Safety Standard Conforming Area Sensor SF2-EH SF1-A Global Conformance to Safety Standards AREA SENSORS SF2-EH Please contact us regarding CE marking. Global Safety The SF2-EH series is UL listed IEC 61496-1/2 Type 4 , which is required for use in U.S.A.


    Original     		PDF NA1-11 SF2-EH48-N ossd output Ambient Light Sensor SF2-EH32-N h48 diode SPECIFICATIONS through beam sensor circuit diagram FC-SF2-H12 SF2E 780 AC h48 signal diode

    D45 TRANSISTOR

    Abstract: power bjt advantages and disadvantages transistor 412 BUV98 compatible buv48 equivalent an363 ST Power bipolar transistors Selection guide MTBF IGBT module power transistor IGBT Designers Manual
    Text: APPLICATION NOTE POWER TRANSISTORS - DEVICES AND DATASHEETS by V. Sukumar ABSTRACT The purpose of this paper is to give a general overview of how to read a transistor specification. We will discuss bipolar transistors, power MOSFETs and IGBTs, and introduce some intelligent power


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    DATASHEET OF IC 741

    Abstract: LM1011 oscillator circuit with op amp 741 using ic 741 The Monolithic Operational Amplifier A Tutorial oscillator circuit with op amp 741 its output NPN Transistor 6A 70V 1G Linear Applications Handbook National Semiconductor sine wave Oscillator jfet circuit 741 dual op amp
    Text: National Semiconductor Appendix A A December 1974 Invited Paper IEEE Journal of Solid-State Circuits Vol SC-9 No 6 Abstract A study is made of the integrated circuit operational amplifier IC op amp to explain details of its behavior in a simplified and understandable manner Included are


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    ic L 816a y

    Abstract: diode 816
    Text: Rev.4.0 S-816 Series External Transistor Type Voltage Regulators The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent protection, and power-off function. A low drop-out type


    Original     		PDF S-816 S-816, ic L 816a y diode 816

    TRANSISTOR 1141-0

    Abstract: ic L 816a y 2SA1213Y 2SA1213-Y S-816 S-816A25AMC-BAA-T2 S-816A30AMC-BAF-T2 S-816A33AMC-BAI-T2 S-816A37AMC-BAM-T2 S-816A40AMC-BAP-T2
    Text: Contents Features. 1 Block Diagram . 1 Applications . 1 Selection Guide. 2


    Original     		PDF 20mV/div) 50msec/div) S-816 S-816A50AMC 100mA 50mA/div) TRANSISTOR 1141-0 ic L 816a y 2SA1213Y 2SA1213-Y S-816A25AMC-BAA-T2 S-816A30AMC-BAF-T2 S-816A33AMC-BAI-T2 S-816A37AMC-BAM-T2 S-816A40AMC-BAP-T2

    S-816

    Abstract: SEIKO ic L 816a y 1661m diode 816 816a4
    Text: Rev.4.1 S-816 Series External Transistor Type Voltage Regulators The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent protection, and power-off function. A low drop-out type


    Original     		PDF S-816 S-816, SEIKO ic L 816a y 1661m diode 816 816a4

    diode LN 4001

    Abstract: diode 816
    Text: Contents Block Diagram .1 Applications .1 Selection


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FOR SAFEGUARD Robust Light Curtain Type 4 Diagnosis Self-diagnosis Test input PNP output Interference type available prevention SF4-AH LIGHT CURTAINS SF2-EH SERIES Conforming to Machine Directive & EMC Directive Approved Listing Conforming to OSHA / ANSI Global safety


    Original     		PDF

    s 816 VOLTAGE REGULATOR

    Abstract: RA 816 TOSHIBA 2SA1213Y 2SA1213Y 2SA1213-Y S-816
    Text: S-816 Series EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR www.sii-ic.com Rev.6.0_00 Seiko Instruments Inc., 1996-2010 The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent protection, and shutdown


    Original     		PDF S-816 S-816, s 816 VOLTAGE REGULATOR RA 816 TOSHIBA 2SA1213Y 2SA1213Y 2SA1213-Y

    S-816A26AMC-BABT2G

    Abstract: TOSHIBA 2SA1213Y S-816A27AMC-BACT2G S-816 S-816A25AMC-BAAT2G 2SA1213Y
    Text: Rev.5.1_00 EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR S-816 Series The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent


    Original     		PDF S-816 S-816, S-816A26AMC-BABT2G TOSHIBA 2SA1213Y S-816A27AMC-BACT2G S-816A25AMC-BAAT2G 2SA1213Y

    Untitled

    Abstract: No abstract text available
    Text: S-816 Series EXTERNAL TRANSISTOR TYPE CMOS VOLTAGE REGULATOR www.sii-ic.com Rev.6.0_00 Seiko Instruments Inc., 1996-2010 The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent protection, and shutdown


    Original     		PDF S-816 S-816,

    Untitled

    Abstract: No abstract text available
    Text: Rev.5.0_00 EXTERNAL TRANSISTOR TYPE VOLTAGE REGULATOR S-816 Series The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent protection, and shutdown function. A low drop-out type regulator


    Original     		PDF S-816 S-816,

    transistor k 4110

    Abstract: TOSHIBA 2SA1213Y overcurrent circuit protection SL 100 NPN Transistor bau 95 s 816 VOLTAGE REGULATOR S-816A50AMC-BAZ S-816A50AMC-BAZ-T2 S-816 S-816A25AMC-BAA-T2
    Text: Rev.4.1_10 EXTERNAL TRANSISTOR TYPE VOLTAGE REGULATOR S-816 Series The S-816 Series consists of external transistor type positive voltage regulators, which have been developed using the CMOS process. These voltage regulators incorporate an overcurrent protection, and shutdown function. A low drop-out type regulator


    Original     		PDF S-816 S-816, transistor k 4110 TOSHIBA 2SA1213Y overcurrent circuit protection SL 100 NPN Transistor bau 95 s 816 VOLTAGE REGULATOR S-816A50AMC-BAZ S-816A50AMC-BAZ-T2 S-816A25AMC-BAA-T2

    rds035

    Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
    Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW


    Original     		PDF RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198

    ZXGD3004E6

    Abstract: ZXGD3003E6 ZXGD3002 ZXGD3002E6 ZXGD3003 2A mosfet igbt driver stage BJT 2222 ZXGD3001E6 ZETEX GATE DRIVER inverter design using plc
    Text: AN52 IGBT gate drive considerations in electronic lamp ballasts Yong Ang, Applications Engineer, Zetex Semiconductors The use of Zetex high speed non-inverting gate drivers for IGBT half-bridge electronics ballasts Introduction The purpose of this note is to demonstrate the design of fast switching IGBT's gate drive for electronic


    Original     		PDF D-81541 ZXGD3004E6 ZXGD3003E6 ZXGD3002 ZXGD3002E6 ZXGD3003 2A mosfet igbt driver stage BJT 2222 ZXGD3001E6 ZETEX GATE DRIVER inverter design using plc

    MPS2907A

    Abstract: MPS2907
    Text: Transys Electronics L I M I T E D PNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS2907 MPS2907A TO-92 Plastic Package General Purpose Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL MPS2907 MPS2907A UNITS 60 V 75 V


    Original     		PDF MPS2907 MPS2907A MPS2907A MPS2907

    OMRON E5CN

    Abstract: omron zen 10c1dr-d-v1 Omron SPEED sensor 12v m16 OMRON H5CX programming manual omron zen 10c1ar-a-v1 omron TS 101 DA analogue extension modules ZEN 10C1DR-D-V1 sv 120 230 liquids dual level relay manual omron e5cs Omron H7CR Catalog
    Text: INDUSTRIAL COMPONENTS Product Selector 2004 / 2005 • Electromechanical relays • Timers • Counters • Programmable relays • Level and leakage controllers • Industrial switches • Pushbutton switches • Low voltage switch gear • Temperature controllers


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    SMD Transistor DN

    Abstract: bcr402 BCR402R BCR402U BCR405U BCR401R SC74
    Text: Applications Note No. 066 Silicon Discretes BCR402R: Light Emitting Diode LED Driver IC Provides Constant LED Current Independent of Supply Voltage Variation • Supplies stable bias current for Light Emitting Diodes (LEDs) • Low Voltage Drop of 0.75V maximizes system DC efficiency


    Original     		PDF BCR402R: OT143R BCR401R, BCR402R, BCR402U BCR405U, ents/039/975/Appli077 16-Jan-2004 SMD Transistor DN bcr402 BCR402R BCR405U BCR401R SC74

    Transistors high frequency Bipolar NPN

    Abstract: transistor marking code SGs IUC 9300 marking b4c SGS Ates data ed general semiconductor HP2-17 FERRANTI
    Text: ADVANCE COPY I 18 NOV DEPARTMENTAL COMPONENT SPECIFICATION FERRANTI »85 PSD DISCRETE SEMICONDUCTOR DEVICES 28' 63 TRANSISTOR BIPOLAR NPN LOU POWER. GENERAL PURPOSE fT - 30 NHz Pt o t * 1 ' ° W* Scotland vr»n - 120 »_ M O D. R EC O RD SHEET 1 ? 3 4 s


    OCR Scan     		PDF 2N5682 2NS680, IEC-191 2NS682/FCS 2b463 Transistors high frequency Bipolar NPN transistor marking code SGs IUC 9300 marking b4c SGS Ates data ed general semiconductor HP2-17 FERRANTI