MIL-F-14072
Abstract: 15408 L-P-513 LP-513 ASTM-B16 MIL-T-10727 MIL-I-24768 q 1257
Text: R TI F I ED TURRET TERMINAL BOARDS 2 T Y CE 900 ISO Q I UAL MINIATURE TURRET TERMINAL BOARDS Terminals: Brass, ASTM-B16. Terminals are staked in all holes except end mounting holes. Plating: Hot Tin Dipped, MIL-T-10727. Recommended for longer shelf life and better solderability. Other plating can be furnished.
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ASTM-B16.
MIL-T-10727.
LP-513.
MIL-I-24768/27,
MIL-F-14072
MIL-F-14072
15408
L-P-513
LP-513
ASTM-B16
MIL-T-10727
MIL-I-24768
q 1257
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Untitled
Abstract: No abstract text available
Text: KSC2756 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER S O T -2 3 • HIGH Gee Typi 23dB ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KSC2756
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4250 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL PLANAR TYPE 2SC4250 TV VHF M IXER APPLICATIONS • High Conversion Gain : Gee = 25dB Typ. • Low Reverse Transfer Capacitance : Cre —0 ,45pF (Typ.) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC4250
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58m transistor
Abstract: No abstract text available
Text: KSC2756 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER . HIGH Gee Typ. 23dB ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage V Em itter-Base Voltage C ollector C urrent V Rating Unit
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KSC2756
58m transistor
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Untitled
Abstract: No abstract text available
Text: A HIGH-DENSITY DUAL-POLYSILICON 5 VOLT-ONLY EEPROM CELL R. Lambertson, A. Malazgirt, C. Lo, A. Vahidimowlavi, P. Holland, M. Fliesler, H. Gee Xicor Inc, 851 Buckeye Court, Milpitas, California, 95035 ABSTRACT In this paper a novel full-function EEPROM cell
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IRF 4145
Abstract: KSC2756 marking uma samsung tv gee transistor
Text: AMSUN6 SEMICONDUCTOR INC KSC2756 14E D | 7^4142 QOOb^k 2 | NPN EPITAXIAL SILICON TRANSISTOR T -3 1 -1 5 MIXER FOR VHF TV TUNER SOT-23 • HIGH Gee lÿp. 23d8 ABSOLUTE MAXIMUM RATINGS (T8=25°C) Characteristic • Rating Symbol Collector-Base Voltage Coiector-Emitter Voltage
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KSC2756
T-31-15
OT-23
V300M
400MHz
910mA
400MHz
300MHz
200MH
100MHz
IRF 4145
marking uma
samsung tv
gee transistor
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71/10VZ/
Abstract: No abstract text available
Text: TURRET TERMINAL BOARDS • SAVE TOOLING • ECONOMICAL • COMPLETE RANGE OF SIZES BOARDS ON THIS PAGE ARE NOT SCORED Readi-Made Terminal Boards: Low cost, meets commercial and military specifications. Produced in large quantities, making it possible to eliminate tooling and setup charges usually applied
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ASTM-B16.
MIL-T-10727.
LP-513,
MIL-P-18177,
MIL-F-14072
71/10VZ/
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Untitled
Abstract: No abstract text available
Text: TURRET TERMINAL ROARDS m MINIATURE TURRET TERMINAL BOARDS Terminals: Brass,ASTM-B16. Terminals are staked in all holes except end mounting holes. '^ Plating: Hot Tin Dipped, MIL-T-10727. Recommended for longer shelf life and better solderability. Other plating can be furnished.
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ASTM-B16.
MIL-T-10727.
MIL-F-14072
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HVIGBT MODULES CM800HB-50H U°mePa,a soW HIGH POWER SWITCHING USE INSULATED TYPE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules A PPLIC A TIO N Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
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CM800HB-50H
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2sc1965
Abstract: 2SC1965A transistor 6w
Text: 1=24^02=] 0017537 MITSUBISHI RF POWER TRANSISTOR 30T 2SC1965A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1 96 5A is a silicon NPN epitaxial planar type transistor Dimension in mm designed for industrial use RF power amplifiers on VHF band 0 8 .5 O M A X
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2SC1965A
2SC1965A
175MHz,
Tc-17metal
2sc1965
transistor 6w
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ptb2011
Abstract: No abstract text available
Text: ERICSSON $ PTB 2011 0 50 Watts, 500-1000 MHz UHF Broadband Power Transistor Prelim inary Description Key Features The 20110 is a class AB, NPN, common emitter RF Power Tran sistor intended for 28 VDC operation across 500 -1000 MHz fre quency band. It is rated at 50 Watts minimum output power and
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200nv\x2
200mAx2
ptb2011
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Untitled
Abstract: No abstract text available
Text: 2SC3123 TO SHIBA 2 S C312 3 TOSHIBA TRANSISTOR TV VHF M IXER APPLICATIONS • • SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2.5-0.3 High Conversion Gain : Gce = 23dB Typ. Low Reverse Transfer Capacitance : Cre = 0.4pF (Typ.) + 0.25 .1 .5 -0 .1 5 .
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2SC3123
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transistor C 639 W
Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
Text: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A
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150mA)
F139B.
CB-76
transistor C 639 W
transistor 639
BC 639 transistor
transistor BC 639
transistor BC 637
Transistor S 637 T
transistor BC 639 c
transistor BC 635
transistor bc 100
bc 639
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5948A
Abstract: 100L 2SC4245 marking L4 800mhz transistor MURATA TTA23A100
Text: T O S H IB A 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 Unit in mm TV TUNER, UHF MIXER APPLICATIONS. VHF-UHF BAND RF AMPLIFIER APPLICATIONS. 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage
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2SC4245
SC-70
800MHz
830MHz,
5948A
100L
2SC4245
marking L4
800mhz transistor
MURATA TTA23A100
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AX620
Abstract: gee transistor RAo sot-23 SC06960
Text: rz z s c s -m 0 M S0 N mrJM K O D raO H LIC TlO R lD ISS BFS19 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS19 F2 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . RF APPLICATION UP T 0 100 MHz
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BFS19
OT-23
SC06960
OT-23
DD7A05D
AX620
gee transistor
RAo sot-23
SC06960
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF M IXER APPLICATIONS. V H F- U H F BAND RF AM PLIFIER APPLICATIONS. 2.1 ± 0.1 . ± 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
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2SC4245
SC-70
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pin diagram for IC 7473
Abstract: pin DIAGRAM OF IC 7473 74LS73D pin diagram of 7473 7473PC ic 7473 pin diagram IC 7473 fan out 74ls73 IC 74LS73 74LS73 dual JK
Text: ' NATIONAL SENICOND {LOGIO DEE D | b S D l l S E OOfc.3712 7 | 73 r-¥ù-o7'0r CO N N ECTIO N DIAGRAM PIN O UT A 54/7473 54H/74H73 54LS/74LS73 DUAL JK FLIP-FLOP W ith S ep arate Clears and Clocks D ESC R IP TIO N — The ’73 and 'H73 dual J K master/slave flip-flops have a
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54H/74H73
54LS/74LS73
54/74H
54/74LS
CLS73)
pin diagram for IC 7473
pin DIAGRAM OF IC 7473
74LS73D
pin diagram of 7473
7473PC
ic 7473 pin diagram
IC 7473
fan out 74ls73
IC 74LS73
74LS73 dual JK
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4250 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE d ? 5 Í1 TV VHF MIXER APPLICATIONS. Unit in mm 2.1 ± 0.1 • High Conversion Gain : Gce = 25dB Typ. • Low Reverse Transfer Capacitance : Cre = 0.45pF (Typ.) 1.25±0.1 oo + 1 1 - MAXIMUM RATINGS (Ta = 25°C)
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2SC4250
SC-70
50MHz
-jl50
--j50
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2SC3120
Abstract: No abstract text available
Text: 2SC3120 TOSHIBA 2 S C 3 1 20 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS VHF ~ UHF B A N D RF AMPLIFIER APPLICATIONS + 0.5 M A X IM U M RATINGS Ta = 25°C SYMBOL VCBO VCEO v EBO ic Ib Pc Tj CHARACTERISTIC
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2SC3120
2SC3120
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Untitled
Abstract: No abstract text available
Text: 2SC3120 TOSHIBA 2 S C312 0 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF MIXER APPLICATIONS VHF ~ UHF B AN D RF AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 .3 + 0.25 .1 .5 - 0 .1 5 . 3- M A X IM U M RATINGS Ta = 25°C SYMBOL VCBO
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2SC3120
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MURATA TTA23A100
Abstract: No abstract text available
Text: TO SHIBA 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 U nit in mm TV TUNER, UHF M IXER APPLICATIONS VHF—UHF BAND RF AM PLIFIER APPLICATIONS 2.1 ± 0.1 1.25t 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage
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2SC4245
SC-70
MURATA TTA23A100
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMI CONDUCTOR INC MPSH24 14E D §7*14,41*45 0007337 fl J NPN EPITAXIAL SILICON TRANSISTOR T-31-19 VHF TRANSISTOR ABSOLUTE M AXIM UM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage CoUector-Emitter Voltage Emitter-Base Voltage Collector Current
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MPSH24
T-31-19
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J551
Abstract: TS 4142 MPSH20 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1
Text: .SAMSUNG SEM ICO NDUCTOR INC 14E D | TTbMlME 0007304 S J MPSH20 7^3/- NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voftage Emitter-Base Voltage Collector Current
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MPSH20
T-31-Ã
100MHz
J551
TS 4142
MPSH24
S1000
sc 4145
276MH
4142 TS
I10M1
213M1
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2SC4245
Abstract: No abstract text available
Text: TO SH IBA 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 TV TUNER, UHF MIXER APPLICATIONS U n it in mm V H F -U H F BAND RF AMPLIFIER APPLICATIONS 2.1 ¿ 0.1 |1 .2 5 i0 .1 | MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage
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2SC4245
SC-70
2SC4245
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