GE006367
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 260 LD 262 . LD 269 Chip 2.54 mm spacing GE006367 Cathode LD 263 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features
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GE006367
80-Serie
LD260
GE006367
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T20 96 diode
Abstract: LD260 LD261-5/6 LD262 LD261 diode
Text: LD 261 LD 262-269/260 SINGLE DIODE ARRAYS Infrared Emitters Dimensions in Inches mm GE006367 FEATURES • GaAs IR emltterdiode, made In a liquid phase epitaxy process • High reliability • Matches BPX 80-89 photofransistors • Availability: "A” Dimension (in mm)
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GE006367
LD261
LD262
LD263
LD260
electronic50
lp-50
LD260-26B
T20 96 diode
LD261-5/6
LD261 diode
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UV diode 250 nm
Abstract: SFH 508 SFH291
Text: 3FW 2S1 SIEMENS High UV Sensitivity Silicon PiìolocHocle Dim ensions in inches mm 236(6.0) 134(3.4) '118(3.0) .570 (14.5) .491(12.5) 228 (5.8) Active die area It .200 0.326(8.3) 0.314(8.0) Anode (5.08) J _ r 0 .373 (9.5) 0 .354 (9.0) u 1 0.018(0.45) GE006367
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GE006367
9X1CT14
6X1012
OHF01
SFH291
UV diode 250 nm
SFH 508
SFH291
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 7.4 LD 260 LD 262 . LD 269 Chip in O CO (O o N GE006367 (O CO (O o o 0 Cathode (LD 263) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale
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GE006367
80-Serie
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Untitled
Abstract: No abstract text available
Text: BPX81 2-10 TRANSISTOR ARRAYS BPX82— 89, 80 SIEMENS SINGLE TRANSISTOR Silicon NPN Phototransistor Dimensions in inches mm BPX81 Dimension “A*. Part No. Min. Max. BPX82 .177 (4.5) .193 (4.9) BPX 83 .275 (7.0) .291 (7.4) BPX 84 .377 (9.6) .393 (10) BPX 85
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BPX81
BPX82â
BPX82
GE006367
1000lx,
950nm
BPX81-3
BPX81-4
BPX81-2
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Untitled
Abstract: No abstract text available
Text: SIEMENS K 0 M 2 1 08 5 x 5 Silicon PIN Photodiode Array FEATURES • Suitable for use in the visible light and near infrared range • Low noise • Short switching time typ. 10 ns • Every single diode can be activated D im ensions in inch e s (m m ) Chip position Epoxy resin transparent
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41IAI
18-pln
fl535t
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U850 diode
Abstract: U850 KOM2108 84X101
Text: SIEMENS features • Suitable for use in the visible light and near Infrared range • Low noise • Short switching time typ. 10 ne • Every single diode can be activated KOM2t08 5 x 5 Silicon PIN Photodiode Array Dimensions in inches (mm) i Chip position Epoxy resin transparent
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KOM2t08
4x101l!
KOM2108
U850 diode
U850
KOM2108
84X101
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